• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.121-125
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• 1994

We examine the conventional method of measuring the internal optical loss using the dependence of the reciprocal external quantum efficiency on the cavity length in laser diodes. It is shown that the implicit assumption of constant internal differential quantum efficiency ${\eta}_{id}$, which has been customarily misinterpreted as internal quantum efficiency ${\eta}_{i}$, is not valid for devices with short cavity length. Therefore, for reliable measurments long cavity data should be used.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.922-927
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• 2001

Single-layer green ELs was fabricated with using molecularly-dispersed Bu-PBD into poly-N-vinylcarbazole(PVK) which has low operating voltage and high quantum efficiency. A EL cell structure of glass substrate/indium-tin-oxide/PVK:Bu-PBD:C6(∼ 100nm)/Ca(20nm)/Al(20nm) was employed with variable doping concentration. The keys to obtain high quantum efficiency was excellent film forming capability of molecularly dispersed into PVK and appropriate combination of cathode for avoiding exciplex. We obtained the turn-on voltage of 4.2V and quantum efficiency of 0.52% at 0.lmol% of C6 concentration which has been improved about a factor of 50 in comparison with the undoped cell. The PL peak wavelengths wouldn\`t be turned by changing the concentration of the C6 dopant. Green EL emission peak and FWHM were 520nm and 70nm respectively. PL emission peak was obtained at 495nm.

• Korean Journal of Optics and Photonics
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• v.26 no.2
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• pp.98-102
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• 2015

The radiative quantum efficiency of a solid-state laser was measured by photoacoustic spectroscopy with a PZT as the detector. The radiative quantum efficiency was about 58.3 % for a laser-diode pumped Nd:S-VAP laser under lasing conditions. The measurement of radiative quantum efficiency was presented as an effective method for the optimization of a laser resonator.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.12-15
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• 2018

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

• Journal of Information Display
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• v.11 no.3
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• pp.128-133
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• 2010

The quantum efficiencies of CRT and FL tubes that use a phosphor screen as transducer of invisible particles to light in visible spectrum wavelengths were calculated in this study. The phosphor screens in CRT tubes have quantum efficiencies greater than 3,000, which give the luminance of comfortable images on phosphor devices for the observation by the eyes. The established FL tubes have the amazing quantum efficiency of $3{\times}10^{10}$ photons per moving electron per FL tube, which allows the illumination of a $5{\times}5\;m^2$ room by three FL tubes, with heating at $40^{\circ}C$. Thus, FL tubes, including for backlighting of LCD displays, have a superior over other illumination sources.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• Ceramist
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• v.21 no.1
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• pp.64-79
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• 2018

Recent years, OLEDs have been progressed intensively and been widely applied to Display and Lighting industry,Almost 100% internal quantum efficiency was achieved by developing new materials and structure optimization. However, external quantum efficiency was still low due to total internal reflection of light inside OLED devices and absorption of light at the surface of metal electrode. In order to improve external quantum efficiency of OLED devices, various kinds of optical functional structures were introduced to inside and outside of OLED devices to increase light extraction efficiency. In this paper, various efforts to apply optical functional structures in OLED devices were reviewed and way to improve light extraction efficency of OLED devices were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.676-681
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• 2015

Recently many studies being carried out to increase the light efficiency of LED. The external quantum efficiency of LED, generally the light efficiency, is determined by the internal quantum efficiency and the light extraction efficiency. The internal quantum efficiency of LED was already reached to more than 90%, but the light extraction efficiency is still insufficient compared with the internal quantum efficiency because the total internal reflection is generated in the interface between the LED chip and air. Thus, we studied about flip chip LED with PSS and performed the optical simulation which find more optimized PSS for flip chip LED to increase the light extraction efficiency. Decreasing of the total internal reflection and effect of diffused reflection according to PSS improved the light extraction efficiency. To get more higher the efficiency, we simulated flip chip with PSS that the parameters are arrangement, edge spacing, radius, height and shape of PSS.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.145-145
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• 2011

Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1268-1272
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• 2003

In order to enhance current Injection efficiency of Y-groove inner strife(VIS) quantum wire lasers, three different current configurations, n-blocking on p-substrate(VIPS), p-n-p-n blocking on n-substrate(VI(PN)nS), p-blocking on n-substrate(VINS) have been designed and fabricated. Among them VIPS laser showed the most stable characteristics of lasing up to 5 mW/facet, a threshold current of 39.9 mA at 818 nm, and an external differential quantum efficiency of 24 %/facet. The current tuning rate was almost linear 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/$^{\circ}C$.