• Title/Summary/Keyword: Quantum confinement elect

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Effect of Annealing Temperature on the Luminescence of Si Nanocrystallites Thin Flms Fabricated by Pulsed Laser Deposilion (펄스 레이저 증착법을 이용한 실리콘 박막의 어닐링 온도 변화에 따른 발광 특성연구)

  • 김종훈;전경아;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.127-130
    • /
    • 2001

  • Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films depending on the variation of the annealing temperature.

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