• 제목/요약/키워드: Quantum confinement elect

검색결과 1건 처리시간 0.015초

펄스 레이저 증착법을 이용한 실리콘 박막의 어닐링 온도 변화에 따른 발광 특성연구 (Effect of Annealing Temperature on the Luminescence of Si Nanocrystallites Thin Flms Fabricated by Pulsed Laser Deposilion)

  • 김종훈;전경아;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.127-130
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    • 2001

  • Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films depending on the variation of the annealing temperature.

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