• 제목/요약/키워드: Quantum community

검색결과 5건 처리시간 0.017초

시간지연을 이용한 양자비밀직접통신 (Quantum Secure Direct Community using Time Lag)

  • 임광철;임동호
    • 한국정보통신학회논문지
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    • 제21권12호
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    • pp.2318-2324
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    • 2017
  • 차세대 암호로 대두 되고 있는 양자암호는 양자키전송 프로토콜과 양자비밀직접통신으로 나뉘어 연구되고 있다. 양자키전송 프로토콜은 사용상의 비효율성 때문에 현대암호와 병합하여 사용하거나 OTP를 포기한 형태로 사용될 수 있다. 본 고에서는 양자키전송이 아닌 직접통신을 양자암호화 하여 진행하는 알고리즘을 제안하였다. 양자비밀 직접통신을 구현하는 방식은 2채널 방식을 이용하였다. 두 채널 중 한쪽 채널에 아인슈타인의 중력장에의한 시간지연 함수를 적용하여 두 채널간 시간차를 적용하는 방식의 양자비밀직접통신 프로토콜을 설계 하였다. 제안하는 시간 지연 효과는 중력렌즈 현상을 반영한 것으로 점질량에 의한 시간지연을 제안하였다. 원심가속도를 이용한 중력 발생기는 점질량계에 포함되며 이를 이용한 시간지연은 중력계의 변화에 의한 상관관계를 보임을 알 수 있다.

Integer and fractional quantum Hall effect in graphene heterostructure

  • Youngwook Kim
    • 한국초전도ㆍ저온공학회논문지
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    • 제25권1호
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    • pp.1-5
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    • 2023
  • The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime.

다중물리 전산모사를 이용한 물성 최적화 이론 및 시뮬레이션 (Material Design Using Multi-physics Simulation: Theory and Methodology)

  • 현상일
    • 한국전기전자재료학회논문지
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    • 제27권12호
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    • pp.767-775
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    • 2014
  • New material design has obtained tremendous attention in material science community as the performance of new materials, especially in nano length scale, could be greatly improved to applied in modern industry. In certain conditions limiting experimental synthesis of these new materials, new approach by computer simulation has been proposed to be applied, being able to save time and cost. Recent development of computer systems with high speed, large memory, and parallel algorithms enables to analyze individual atoms using first principle calculation to predict quantum phenomena. Beyond the quantum level calculations, mesoscopic scale and continuum limit can be addressed either individually or together as a multi-scale approach. In this article, we introduced current endeavors on material design using analytical theory and computer simulations in multi-length scales and on multi-physical properties. Some of the physical phenomena was shown to be interconnected via a cross-link rule called 'cross-property relation'. It is suggested that the computer simulation approach by multi-physics analysis can be efficiently applied to design new materials for multi-functional characteristics.

FRET-Based Quantitative Discrimination of Bisulfite-Untreated DNA from Bisulfite-Treated DNA

  • Lee, Eun Jeong;Cho, Yea Seul;Song, Seongeun;Hwang, Sang-Hyun;Hah, Sang Soo
    • Bulletin of the Korean Chemical Society
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    • 제35권5호
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    • pp.1455-1459
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    • 2014
  • We report a sensitive and reliable FRET-based nanotechnology assay for efficient detection and quantification of bisulfite-unmodified or modified DNA. Bisulfite-untreated DNA or bisulfite-treated DNA is subjected to PCR amplification with biotin-conjugated primers so that the amounts of bisulfite-untreated and treated DNA can be differentiated. Streptavidin-coated quantum dots (QDs) are used to capture biotinylated PCR products intercalated with SYBR Green, enabling FRET measurement. Key features of our method include its low intrinsic background noise, high resolution, and high sensitivity, enabling detection of as little as 1.75 ng of bisulfite-untreated DNA in the presence of an approximately 1,000-fold excess of bisulfite-untreated DNA compared to bisulfate-treated DNA, with the use of PCR reduced (as low as 15 cycles). SYBR Green as an intercalating dye as well as a FRET acceptor allows for a single-step preparation without the need for primers or probes to be chemically conjugated to an organic fluorophore. Multiple acceptors per FRET donor significantly enhance the signal-to-noise ratio as well. In consideration of the high relevance of bisulfite treatment to DNA methylation quantitation, our system for FRET measurement between QDs and intercalating dyes can be generally utilized to analyze DNA methylation and to potentially benefit the scientific and clinical community.

Bandgap Engineering in CZTSSe Thin Films via Controlling S/(S+Se) Ratio

  • Vijay C. Karade;Jun Sung Jang;Kuldeep Singh, Gour;Yeonwoo Park;Hyeonwook, Park;Jin Hyeok Kim;Jae Ho Yun
    • Current Photovoltaic Research
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    • 제11권3호
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    • pp.67-74
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    • 2023
  • The earth-abundant element-based Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (Voc) and short circuit current density (Jsc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.