• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.630-634
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• 2016

We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using $sp3d5s^*$ is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional $Schr{\ddot{o}}dinger$-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic ($I_{ON}$ > $100 {\mu}A/{\mu}m$) that broken-gap TFETs normally have.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1456-1458
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• 1996

In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current density ($J_p$) for the accurate switching operation and the high output of the device. In this work, a resonant interband tunneling diode (RITD) with single quantum well structure, which is composed of $In_{0.53}Ga_{0.47}As/ln_{0.52}Al_{0.48}As$ heterojunction on the InP substrate, is suggested to improve the PVCR and $J_p$ through the narrowed tunnel barriers. As the result, the measured I-V curves showed the PVCR over 60.

• Proceedings of the Korean Magnetic Resonance Society Conference
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• 2001.02a
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• pp.2-2
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• 2001

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.19-24
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• 1992

The analysis of the resonant tunneling based on the exact solution of Schrodinger equations is performed in a single quantum well structure under applied bias. The transmittivity and the net tunneling current density are calculated with Airy function and the boundary conditions which is suggested by Bastard. The results are compared with those from other methods and boundary conditions. From the calculated J-V characteristics for the tunneling current, the dependence of the voltage location showing the first peak current on the various temperatures and Fermi level is investigated. In addition, the wave function within the structure is obtained and compared with that from the flat-potential model.

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.32-32
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• 2004

• Journal of Mechanical Science and Technology
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• v.18 no.8
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• pp.1271-1287
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• 2004

In this article, vapor bubble nucleation in liquid and the evaporation process of a liquid droplet at its superheat limit were discussed from the viewpoint of molecular clustering (molecular cluster model for bubble nucleation). For the vapor bubble formation, the energy barrier against bubble nucleation was estimated by the molecular interaction due to the London dispersion force. Bubble nucleation by quantum tunneling in liquid helium under negative pressure near the absolute zero temperature and bubble nucleation on cavity free micro heaters were also presented as the homogenous nucleation processes.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.68-68
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• 2009

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.48-49
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• 2001

GaN는 wurzite structure를 갖는 wide bandgap III-V족 반도체로서, 청색 반도체 laser diode (LD), light emitting diode (LED)등으로 응용되는 물질이다. InGaN quantum well은 GaN계의 청색 LD, LED 구조에서 활성층으로 사용되기 때문에 이에 대한 광학적 연구가 활발하다. InGaN는 GaN위에 성장하면 strain에 의해 piezoelectric 효과가 크게 나타나는 것으로 알려져 있다. 이러한 piezoelectric potential에 의해 외부에서 voltage가 가해지지 않은 상황에서도 InGaN quantum well내의 electron, hole의 wave function이 비대칭 potential의 영향을 받게된다. (중략)

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.58-58
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• 2008

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.83-88
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• 2004

Magnetism of molecular nanomagnet, which attracted a lot of academic attention after the discovery of the macroscopic quantum tunneling of magnetism, is reviewed. Molecular nanomagnet is metal-organic material in which magnetic ions are regularly located in the organic skeleton. Also, the interaction between the molecules is very small and those molecules form macroscopic molecular crystal in which molecules are residing at the element points in the crystal. Molecular nanomagnets show a lot of interesting features, especially, equivalence of macroscopic magnetic properties and molecular magnetic properties. In this paper, research results on molecular nanomagnet with microscopic tool like NMR are reviewed mainly. The new method to observe the quantum tunneling of magnetization discovered in Mnl2-ac with NMR is shown and the research results on the microscopic aspects of the macroscopic quantum tunneling of magnetization using the new method are shown. Also, the physical aspect of the level crossing effect which has been reported originally with NMR in molecular nanomagnet is reviewed with experiment results. The research results on the molecular nanomagnets will reveal the important information about the limit of the miniaturization of magnetic memory units and give us the basic scientific knowledge which is needed for the application for the quantum computation. Moreover, academically, many quantum mechanical theories which have not been checked the validity can be checked with experiments.