• 제목/요약/키워드: Quantum Size Effect

검색결과 96건 처리시간 0.033초

Se 전구체 함량 따른 CdSe 양자점 형광체의 발광특성 (Luminescent Characteristics of CdSe Quantum Dot Phosphor Depending on Se Precursor Ratio)

  • 엄누시아;김택수;좌용호;김범성
    • 한국분말재료학회지
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    • 제19권6호
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    • pp.442-445
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    • 2012
  • The quantum dots (QD) have unique electrical and optical properties due to quantum dot confinement effect. The optical properties of QDs are decided by various synthesis conditions. In a prior QDs study, a study on the QDs size with synthesis condition such as synthesis time and temperature is being extensively researched. However, the research on QDs size with composition ratio has hitherto received scant attention. In order to evaluate the ratio dependence of CdSe crystal, synthesis ratio of Se precursor is changed from 16.7 mol%Se to 44 mol%Se. As the increasing Se ratio, the band gap was increased. This is caused by red shift of emission. We confirmed optical property of CdSe QDs with composition ratio.

CdTe 양자점 합성과 물리적 특성 분석 (Preparation and Characterization of CdTe Quantum Dots)

  • 김현석;송현우;조경아;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.195-197
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    • 2002
  • CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. Photoluminescence(PL) spectra of the synthesized CdTe QDs revealed the intensity of PL peaks was stronger as the condensation time was longer. This result was thought because annealing effect by thermal energy transferred during condensation eliminated defects which act as traps and recombination centers in CdTe particle. PL intensity has stron dependence of Te precursor concentration. It confirmed the ratio of Te ion to Cd ion added during synthesis affected the particle size and size distribution of the CdTe QDs. Finally, the synthesized CdTe QDs were identified to be cubic structured CdTe quantum dots by X-ray diffraction(XRD).

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Injection 온도 및 합성시간에 따른 CdSe 양자점 합성 및 특성 (Synthesis and Characterization of CdSe Quantum Dot with Injection Temperature and Reaction Time)

  • 엄누시아;김택수;좌용호;김범성
    • 한국재료학회지
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    • 제22권3호
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    • pp.140-144
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    • 2012
  • Compared with bulk material, quantum dots have received increasing attention due to their fascinating physical properties, including optical and electronic properties, which are due to the quantum confinement effect. Especially, Luminescent CdSe quantum dots have been highly investigated due to their tunable size-dependent photoluminescence across the visible spectrum. They are of great interest for technical applications such as light-emitting devices, lasers, and fluorescent labels. In particular, quantum dot-based light-emitting diodes emit high luminance. Quantum dots have very high luminescence properties because of their absorption coefficient and quantum efficiency, which are higher than those of typical dyes. CdSe quantum dots were synthesized as a function of the synthesis time and synthesis temperature. The photoluminescence properties were found strongly to depend on the reaction time and the temperature due to the core size changing. It was also observed that the photoluminescence intensity is decreased with the synthesis time due to the temperature dependence of the band gap. The wavelength of the synthesized quantum dots was about 550-700 nm and the intensity of the photoluminescence increased about 22~70%. After the CdSe quantum dots were synthesized, the particles were found to have grown until reaching a saturated concentration as time increased. Red shift occurred because of the particle growth. The microstructure and phase developments were measured by transmission electron microscopy (TEM) and X-ray diffractometry (XRD), respectively.

마이크로리액터를 이용한 전구체 유속에 따른 CdSe/ZnS 양자점의 광학특성 (Optical Characteristics of CdSe/ZnS Quantum Dot with Precursor Flow Rate Synthesized by using Microreactor)

  • 박지영;정다운;주원;서한욱;좌용호;김범성
    • 한국분말재료학회지
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    • 제23권2호
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    • pp.91-94
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    • 2016
  • High-quality colloidal CdSe/ZnS (core/shell) is synthesized using a continuous microreactor. The particle size of the synthesized quantum dots (QDs) is a function of the precursor flow rate; as the precursor flow rate increases, the size of the QDs decreases and the band gap energy increases. The photoluminescence properties are found to depend strongly on the flow rate of the CdSe precursor owing to the change in the core size. In addition, a gradual shift in the maximum luminescent wave (${\lambda}_{max}$) to shorter wavelengths (blue shift) is found owing to the decrease in the QD size in accordance with the quantum confinement effect. The ZnS shell decreases the surface defect concentration of CdSe. It also lowers the thermal energy dissipation by increasing the concentration of recombination. Thus, a relatively high emission and quantum yield occur because of an increase in the optical energy emitted at equal concentration. In addition, the maximum quantum yield is derived for process conditions of 0.35 ml/min and is related to the optimum thickness of the shell material.

Effect of Photo-darkening on the Response Time of PbSe Quantum-dots Doped Optical Fiber

  • Watekar, Pramod R.;Lin, Aoxiang;Ju, Seong-Min;Han, Won-Taek
    • 한국광학회:학술대회논문집
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    • 한국광학회 2008년도 동계학술발표회 논문집
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    • pp.251-252
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    • 2008
  • We fabricated silica glass optical fiber containing PbSe quantum-dots (QD) of average size 3.2 nm. The response time of the PbSe-QD doped optical fiber was measured to be around 200 ps. However, after exposure to 1064 nm laser emission for 15 minutes, the response time dramatically reduced to around 2.5 ps, which may be due to photo-darkening effect.

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졸-겔법에 의한 CdS 분산$SiO_2$ Glass 박막의 비선형광학특성

  • 문종수;강종봉;김경문
    • 한국세라믹학회지
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    • 제33권12호
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    • pp.1353-1364
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    • 1996
  • Recently semiconductor doped glasses have attracted attention as nonlinear optical materials because of their large third order nonlinear optical properties. The transparent and homogeneous CdS-doped SiO2 glass thin films were obtained by the dip=coating process of the sol-gel method. Thin films were consisted of glasses containing CdS microcrystallites which were formed by dissolved Cd2+ and S2- ions in a SiO2 matrix solutions. A subsequent thermal treatment of this samples led the formation of colloidal agglomerates and finally of microcrystallites. The size of CdS microcrystallites was about 4 to 15 nm after thermal treatments at various heating conditions. From the optical absorption spectra of the CdS-doped SiO2 glass films it was found that the absorption edge was blue-shifted compared with that of the bulk CdS crystal(~2, 4 eV) and that the amount of energy shift was inversely proportional to the crystal size. And the band gap energy increased with the decrease in crystallite size indicating that the quantum size effects occured.

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후열처리에 따른 실리콘 나노결정 박막의 광학적 특성 변화 연구 (Annealing Effect on the Photoluminescence of Si Nanocrystallites Thin Films)

  • 전경아;김종훈;최진백;이상렬
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권6호
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    • pp.236-239
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    • 2002
  • Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

H-induced Magnetism at Stepped Si (100) Surface

  • Lee, Jun-Ho;Cho, Jun-Hyung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.211-211
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    • 2012
  • Using spin-polarized density-functional theory calculations, we find that the existence of either Peierls instability or antiferromagnetic spin ordering is sensitive to hydrogen passivation near the step. As hydrogens are covered on the terrace, the dangling bond electrons are localized at the step, leading to step-induced states. We investigate the competition between charge and spin orderings in dangling-bond (DB) wires of increasing lengths fabricated on an H-terminated vicinal Si(001) surface. We find antiferromagnetic (AF) ordering to be energetically much more favorable than charge ordering. The energy preference of AF ordering shrinks in an oscillatory way as the wire length increases. This oscillatory behavior can be interpreted in terms of quantum size effects as the DB electrons fill discrete quantum levels.

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고온 열분해 반응법을 이용한 PbSe 나노입자의 Acetic Acid 첨가에 대한 영향 (The Effect of Acetic Acid in Synthesizing PbSe Quantum Dots by Hot Solution Chemical Process)

  • 백인찬;석상일;정용재
    • 한국세라믹학회지
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    • 제44권2호
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    • pp.89-92
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    • 2007
  • PbSe, with a band gap in the mid-infrared and a samll effective mass, is an interesting material for optical and electrical applications in infrared region. Various colloidal synthetic routes for synthesizing PbSe quantum dot nanoparticles have been developed in the last couple of years. In this work, stable colloidal solutions containing crystalline PbSe particles in the order of 5-15 nm were synthesized using different amount of acetic acid in high boiling coordinating solvents. The size and shape of PbSe nanoparticles was greatly influenced by coexistence of acetic acid in synthetic medium. It was observed by TEM that the shape of PbSe nanoparticles with different amount of acetic acid was changed from spherical to cube or star types.

Photovoltaic characteristics of Si quantum dots solar cells

  • Ko, Won-Bae;Lee, Jun-Seok;Lee, Sang-Hyo;Cha, Seung-Nam;Hong, Jin-Pyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.489-489
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    • 2011
  • The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

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