• Korean Journal of Materials Research
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• v.10 no.10
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• pp.698-702
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• 2000

The characteristics of optical absorption in $Al_{0.24}Ga_{0.76}As/GaAs$ multi-quantum wells(MQWs) structure were investigated by using the surface photovoltage(SPV). The Spy features near 1.42 eV showed two overlapping signals. By chemical etching, we found associated with the GaAs substrate and the GaAs cap layer. The Al composition(x=24 %) was determined by Kuech's composition formula. In order to identify the transition energies. the experimentally observed energies were compared with results of the envelope function approximation for a rectangular quantum wells An amplitude variation of the relative Spy intensity from the GaAs substrate, llH, and llL was observed at different light intensities. A variation in the SPY line shape of the transition energies were observed with decreasing tempera­t ture.

• Journal of the Optical Society of Korea
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• v.4 no.2
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• pp.75-78
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• 2000

We design a high temperature oven for measuring the saturation intensity of the transition line $4f^ 6/6s^{2 7}7F_0 ↔ 4f^6/6s6p $^1$P(J = 1)$ of the samarium atom. We first constructed a high temperature oven to generate the samarium vapor column and study the thermal characteristics of the oven. The oven is able to operate at a temperature up to about 1400 $^{\circ}C$ and the operation is tested by using several metals with high melting points. We describe two wave mixing experiment with the samarium vapor generated in the high temperature oven and obtain the saturation intensity by analyzing the first diffraction signal.

• Korean Journal of Optics and Photonics
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• v.10 no.4
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• pp.306-310
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• 1999

Electron intersubband absorption in Sb $\delta$-doped Si(110)/SiGe multiple quantum well structures is observed. Normally incident light can excite electrons in Si(110) quantum wells, which is not possible for Si(001) or GaAs quantum wells. The influence of Ge composition in SiGe barries is investigated. As the Ge composition in SiGe barriers increases, the absorption strength is decreased and the transition energy is increased. It is verifired by comparing the calculated and experimental results obtained at various incident and polarization angles that normally incident light and parallel incident light are absorbed in different processes.

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.77-86
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• 2012

The connection between the continuousness of Rabi oscillation and the discontinuity of quantum jumps has long remained one of the conceptual difficulties since the discovery of the quantum physical paradigm. In this study, however, we demonstrate that the behavior of the atom-field composite system gradually changes from the continuous Rabi interaction to the discontinuous quantum jumps as the atom-field coupling strength is reduced. The reduction occurs through enlarging the quantization volume of the mode so that the mode approaches one of the infinitely many modes of the thermal background.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.833-837
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• 2003

The spectral and temporal characteristics of a V-groove AIGaAs-GaAs quantum wire (QWR) laser were investigated with varying the cavity length. At cavity lengths shorter than 300 ${\mu}{\textrm}{m}$, a discrete shift in tile wavelength occurred from the n=1 to the n=2 subband due to the increased cavity losses. Utilizing this characteristic, ultrafast lasing characteristics at each subband were investigated by tile gain switching method.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.33-35
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• 2003

The electrooptic properties of the reflected light in a reflective mode, $45^{\circ}C$twisted nematic liquid crystal (TNLC) cell were investigated in the voltage regions near and away from the Freedericksz transition threshold. The measured reflectivity away from the threshold voltage ($V_th$) could not be described by the model which assurnes a constant tilt angle as well as a linearized distribution of twist angle across the cell, although the data are well fitted near $V_th$. We found that in the voltage region away from $V_th$, the model considering the distributions of the tilt angle and the twist angle should be applied for the calculation of the reflectivity. The director-axis distributions were obtained from the numerical integration of the Euler-Lagrange equation.

• Journal of the Korean Magnetic Resonance Society
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• v.24 no.1
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• pp.16-22
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• 2020

Based on quantum transport theory, we investigated theoretically the magnetic field dependence of the quantum optical transition of quasi 2-dimensional Landau splitting system, in CdS and ZnO Through the analysis of the current work, we found the increasing properties of the cyclotron resonance line-profiles (CRLPs) which show the absorption power and the cyclotron resonance line-widths (CRLWs) with the magnetic field in CdS and ZnO We also found that that CRLWs, γ_total(B) of CdS < γ_total(B) of ZnO in the magnetic field region B < 15 Tesla.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• ETRI Journal
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• v.18 no.4
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• pp.315-338
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• 1997

We extend our previous theoretical analysis of electronic and optical properties of p-type quantum well structures based on the two heavy- and light-hole system to include all the three valence bands. These theories are then used to clarify the origin of the normal incidence absorption and photo current at photon wavelengths of 2 - 3 ${\mu}m$, which was observed in addition to the absorption around 8 ${\mu}m$ by a recent experimental investigation with heavily doped p-type GaAs/AlGaAs multi-quantum well (MQW) structures. In the theoretical analysis, the Hartree and exchange-correlation many-body interactions are taken into account within one-particle local density approximation, and it is shown that normal incidence absorption occurs in two wavelength regions over the transition energy range higher than barrier height for p-type GaAs/AlGaAs superlattices with well doping of $2{\times}10^{19}\;cm^{-3}$; one region has broad absorption peaks with coefficients of about 5000 $cm^{-1}$ around 8 ${\mu}m$, and the other has two rather sharp peaks at 2.7 ${\mu}m$ and 3.4 ${\mu}m$ with 1800 $cm^{-1}$ and 1300 $cm^{-1}$, respectively. The result indicates that the theory explains the experimental observation well, as the theoretical and experimental results are in close agreement in general absorption features.

• Bulletin of the Korean Chemical Society
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• v.29 no.3
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• pp.546-550
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• 2008

The title compound of nicotinato lead(II) complex [Pb$(C_5H_4NCOO)_2$] has been optimized at B3LYP/LANL2DZ and HF/LANL2DZ levels of theory. The calculated results show that the lead(II) ion adopts 2- coordinate geometry, which is the same as its crystal structure and different from the 4-coordinate geometry of isonicotinato lead(II) complex. Atomic charge distributions indicate that during forming the title compound, each nicotinic acid ion transfers their negative charges to central lead(II) ion. The electronic spectra calculated by B3LYP/LANL2DZ level show that there exist two absorption bands, which have some red shifts compared with those of isonicotinato lead(II) complex and the electronic transitions are mainly derived from intraligand $\pi$ -$\pi$ transition and ligand-to-metal charge transfer (LMCT) transition. CIS-HF method is not suitable for the system studied here. The thermodynamic properties of the title compound at different temperatures have been calculated and corresponding relations between the properties and temperature have also been obtained. The second order optical nonlinearity was calculated, and the molecular hyperpolarizability was $1.147754{\times}10^{-30}$ esu.