• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1282-1292
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• 2011

The biotin-attached G8 molecular transporter (5) was synthesized and used together with quantum dots in preparing the complexes (QD-MT). The QD-MT complexes were studied in terms of the cellular uptake and the internalization mechanism in live HeLa cells with the aid of various known endocytosis inhibitors. It has been concluded that the QD-MT complex is internalized largely by macropinocytosis. The mouse tissue distribution of the QD-MT complex by i.p. and i.v. routes showed some organ selectivity and a good ability to cross the BBB.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.208-212
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• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.

• Korean Journal of Materials Research
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• v.19 no.7
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• pp.356-361
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• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.249.1-249.1
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• 2015

Quantum dots (QDs) are attracting growing attention for photovoltaic device applications because of their unique electronic, optical and physical properties. Lead sulfide (PbS) QDs are one of the most widely studied materials for the devices and known to have size-tunable properties. In this context, we investigated the relationship between the size of PbS QDs and two synthesizing conditions, a concentration of ligand, oleic acid in this work, and injection temperature. The inverted colloidal quantum dot solar cells based on the heterojunction of n-type zinc oxide layer and p-type PbS QDs were also fabricated. The size of the QDs and cell properties were observed to depend on both the QD synthesizing conditions, and hence the overall efficiency of the cell could vary even though the size of QDs used was same. The QD synthesizing conditions were finally optimized for the maximum cell efficiency.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.449-469
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• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.251-252
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• 2008

We fabricated silica glass optical fiber containing PbSe quantum-dots (QD) of average size 3.2 nm. The response time of the PbSe-QD doped optical fiber was measured to be around 200 ps. However, after exposure to 1064 nm laser emission for 15 minutes, the response time dramatically reduced to around 2.5 ps, which may be due to photo-darkening effect.

• Bulletin of the Korean Chemical Society
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• v.28 no.6
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• pp.953-958
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• 2007

Anchoring quantum dots (QDs) onto thermodynamically stable, large band gap oxide semiconductors is a very important strategy to enhance their quantum yields for solar energy conversion in both visible and near-IR regions. We describe a general procedure for anchoring a few chalcogenide QDs onto the titanium oxide layer. To anchor the colloidal QDs onto a mesoporous TiO2 layer, linker molecules containing both carboxylate and thiol functional groups were initially attached to TiO2 layers and subsequently used to capture dispersed QDs with the thiol group. Employing the procedure, we exploited cadmium selenide (CdSe) and cadmium telluride (CdTe) quantum dots (QDs) as inorganic sensitizers for a large band gap TiO2 layer of dye-sensitized solar cells (DSSCs). Their attachment was confirmed by naked eyes, absorption spectra, and photovoltaic effects. A few QD-TiO2 systems thus obtained have been characterized for photoelectrochemical solar energy conversion.

• Journal of the Korean Ceramic Society
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• v.55 no.1
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• pp.55-60
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• 2018

In this study, quantum dots composed of $Mn^{2+}$ doped ZnS core and ZnS shell were synthesized using MPA precursor at room temperature. The ZnS: Mn/ZnS quantum dots were prepared by varying the content of MPA in the synthesis of ZnS shells. XRD, Photo-Luminescence (PL), XPS and TEM were used to characterize the properties of the ZnS: Mn/ZnS quantum dots. As a result of PL measurement using UV excitation light at 365 nm, the PL intensity was found to greatly increase when MPA was added at 15 ml, compared to the case with no MPA; the PL peaks shifted from 603 nm to 598 nm. A UV sensor was fabricated by using a sputtering process to form a Pt pattern and placing a QD on the Pt pattern. To verify the characteristics of the sensor, we measured the electrical properties via irradiation with UV, Red, Green, and Blue light. As a result, there were no reactions for the R, G, and B light, but an energy of 3.39 eV was produced with UV light irradiation. For the sensor using ZnS: Mn/ZnS quantum dots, the maximum current (A) value decreased from $4.00{\times}10^{-11}$ A to $2.62{\times}10^{-12}$ A with increasing of the MPA content. As the MPA content increases, the PL intensity improves but the electrical current value dropped because of the electron confinement effect of the core-shell.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.308-313
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• 2006

We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.87.2-87.2
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• 2012

고출력 반도체 레이저 다이오드는 발진 파장 및 광 출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 및 1470 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. 일례로 재료가공의 경우, 레이저 용접, 레이저 인쇄, 하드디스크의 레이저 텍스쳐링 등 그 응용분야는 무수히 많으며, 최근에는 미래 성장동력 사업의 하나로 중요한 이슈가 되는 태양전지에서 에지 분리 (edge isolation), ID 마킹, 레이저 솔더링 등에서 필수불가결한 광원으로 각광받고 있다. 808 nm 대역 In(Ga)AlAs quantum dots laser diode (QDLD) 성장을 위하여 In(Ga)AlAs QD active 와 In(Ga)AlAs QD LD 성장으로 크게 분류하여 여러 가지 test 실험을 수행하였다. 우선 In(Ga)AlAs QD LD 성장에 앞서 high power LD에 적용 가능한 GaAs/AlGaAs quantum well의 성장 및 전기 측정을 수행하여 그 가능성을 보았다. In(Ga)AlAs QD active layer의 효과적인 실험 조건 조절을 위해 QD layer는 sequential mithod (ex. n x (InGaAlAs t sec + InAs t sec + As 10 sec)를 사용하였다. In(Ga)AlAs QD active layer는 성장 온도, 각 sequence 별 시간, 각 source 양, barrier 두께 조절 및 타입변형, Arsenic flux 등의 조건을 조절하여 실험하였다. 또한 위에서 선택된 몇 가지 active layer 를 이용하여 In(Ga)AlAs QD LD 성장 조건 변화를 시도하였다.