• ETRI Journal
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• v.43 no.5
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• pp.909-915
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• 2021

GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer-scale characteristics. The surface morphology and electron channeling contrast imaging (ECCI) were used to analyze the material quality of GaAs films. Only 3-㎛ bowing was observed using the 725-㎛-thick Si substrate. The bowing shows similar levels among the samples with DFLs, indicating that the Si substrate thickness mostly determines the bowing. According to the surface morphology and ECCI results, the compressive strained indium gallium arsenide/GaAs DFLs show an atomically flat surface with a root mean square value of 1.288 nm and minimum threading dislocation density (TDD) value of 2.4×10⁷ cm^-2. For lattice-matched DFLs, the indium gallium phosphide/GaAs DFLs are more effective in reducing the TDD than aluminum gallium arsenide/GaAs DFLs. Finally, we found that the strained DFLs can block propagate TDD effectively. The strained DFLs on the 725-㎛-thick Si substrate can be used for the large-scale integration of GaAs on Si with less bowing and low TDD.

• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.379-380
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• 2007

스테이트 차트에서 (Unified Modeling Language: UML) 상태 기반의 이벤트를 처리하는 실행 상태를 기술하고, 구현과 임베디드 시스템에 적용하는 방안에 대하여 논의하며 퀀텀 플랫폼(quantum platform)을 이용하는데 구성요소인 퀀텀프레임워크 컴포넌트에 대한 부분을 Windows Host 환경에 적용하는 방법에 대해 연구하고 성능평가를 하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.8
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• pp.1060-1066
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• 2021

Recently, researches for quantum computers have been carried out in various fields. Quantum computers performs calculations by utilizing various phenomena and characteristics of quantum mechanics such as quantum entanglement and quantum superposition, thus it is a very complex calculation process compared to classical computers used in the past. In order to simulate a quantum computer, many factors and parameters of a quantum computer need to be analyzed, for example, error verification, optimization, and reliability verification. Therefore, it is necessary to visualize circuits that can intuitively simulate the configuration of the quantum computer components. In this paper, we present a novel visualization method for designing complex quantum computer system, and attempt to create a 3D visualization toolkit to deploy large circuits, provide help a new way to design large-scale quantum computing systems that can be built into future computing systems.

• Journal of Digital Convergence
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• v.12 no.9
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• pp.139-151
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• 2014

Quantum information and communication technology(QICT) holds out tremendous promise for efficiently solving some of the most difficult problems that are intractable on any present or future conventional computer. QICT is one of the most active research areas of modern science, attracting substantial funding that supports research groups at internationally leading academic institutions. To facilitate the progress of QICT research towards the commercialization, a roadmap needs to be formulated, providing some direction for the field with specific technical goals and elucidating interrelationships between approaches for synergistic solutions to obstacles within any one approach. In this paper, we suggest a brief version of roadmap for QICT research and give a discussion about the potential contribution of QICT in Korea industry.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.251-254
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• 2012

In this paper, the output characteristics of GaN-based LED considering quantum well structure are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering thickness of quantum well, number of quantum well and doping of barrier are analyzed using ISE-TCAD.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.71-76
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• 2001

We studied quantum cryptography based on the quantum nature of light. We must reduce the intensity of the light pulse to the single photon regime for quantum cryptographic communication. Considering the noise and the quantum efficiency of the detector, however, we have to fmd a criterion for which we are able to distinguish the error caused by eavesdropping from other system noises. By changing the bias voltage of the detector and the threshold of the signal voltage, we find the safe region for which we can distribute the quantum key with positive proof of no-eavesdropping. The quantum key we used is a four state quantum key (BB84). BB84).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.8
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• pp.1044-1051
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• 2020

The age of quantum computers is coming soon. In order to prepare for the upcoming future, the National Institute of Standards and Technology has recruited candidates to set standards for post quantum cryptography to establish a future cryptography standard. The submitted ciphers are expected to be safe from quantum algorithm attacks, but it is necessary to verify that the submitted algorithm is safe from quantum attacks using quantum algorithm even when it is actually operated on a quantum computer. Therefore, in this paper, we investigate an efficient quantum gate implementation for binary field multiplication of code based post quantum cryptography to work on quantum computers. We implemented the binary field multiplication for two field polynomials presented by Classic McEliece and three field polynomials presented by ROLLO in generic algorithm and Karatsuba algorithm.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.329-330
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• 2007

Today some many types of 3D display are developed but that are not possibly multiviewer, multiview and full parallax. Our new research work uses the Quantum optic to develop 3D display. Quantum mechanically, we can think of the first photon making a virtual transition to the second state. If the second photon appears within the lifetime of that state, the absorption sequence to the third level can be completed. When the electron, located in the third state, shifts to the first state, that electron emits one visible photon. We controlled the two invisible lights to draw a pixel in volume.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.649-654
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• 2014

In this paper, an analytical model for Surrounding Gate (SG) metal-oxide- semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To achieve this goal, we have used variational approach for solving the Poission and Schrodinger equations. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge density, threshold voltage, drain current and gate capacitance. The calculated expressions for the above parameters are simple and accurate. This paper also focuses on the gate tunneling issue associated with high dielectric constant. The validity of this model was checked for the devices with different dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.

• Rapid Communication in Photoscience
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• v.5 no.1
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• pp.8-10
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• 2016

The potential curves of OH bonds of liquid water are inhomogeneous because of a variety of interactions with other molecules and this leads to a wide distribution of vibrational frequency which hampers our understanding of the structure and dynamics of water molecules. Mixed quantum/classical (QM/CM) calculation methods are powerful theoretical techniques to help us analyze experimental data of various vibrational spectroscopies to study such inhomogeneous systems. In a type of those approaches, the interaction energy between OH bonds and other molecules is approximately represented by the interaction between the charges located at the appropriate interaction sites of water molecules. For this purpose, we re-calculated the values of charges by comparing the approximate interaction energies with quantum chemical interaction energies. We determined a set of charges at the TIP4P charge sites which better represents the quantum mechanical potential curve of OH bonds of liquid water.