• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.9-13
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• 2001

The effects of glass addition on the densification and the microwave properties of $(Ba_{0.5}Pb_{0.5})Nd_2Ti_5O_{14}$ dielectric system were studied. When 2~3 wt% of borosilicate glass were added, the density increased and the better microwave properties were obtained. When a sample was sintered at $950^{\circ}C$ with 3 wt% of glass, the quality factor and the temperature coefficient of the resonant frequency of the specimen were 4500 and +10 $ppm/^{\circ}C$, respectively. The dielectric constant, however, decreased from 90 to 75 with glass addition.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.6 no.2
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• pp.27-34
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• 1995

In this paper, an X-band TDRO(transistor dielectric resonator oscillator) is designed and experimented with the oscillator constructed. Design of the TDRO is carried out by deriving analycally the coupling parameters between a microstrip line and a dielectric resonator. The coupling parameters take account of the relations among substrate material, ground plane, metallic boundaries surrounding the resonator, distance between a microstrip line and a resonator. Two criteria, external quality factor and coupling coefficient, have been chosen in order to evaluate the performance of the TDRO designed. TDRO studed in this paper may be useful for the application of a microwave system requiring a stable and effective oscillator frequency.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.895-900
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• 1996

Ba(Ti1-xSnx)4O9 powder was synthesized by oxalate method. With the substitution of Sn into Ti site the sintered BaTiO4 crystal phase was stabilized due to the formation of solid solution. The optimal amounts of Sn solutbility for formation of BaTi4O9 crystalline phase was 0.16mole and of Sn was substituted and sintering was done at 135$0^{\circ}C$ for 30 minutes long rod type crystal was well developed and the highest Q value was obtained. But dielectric constant wasnearly constant without regarding to the Sn addition and the sintering time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.738-743
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• 2004

The microwave dielectric properties and their related structural characteristics in solid solutions of (1-x) $Ba(Mg_{1/3}Nb_{2/3})O_3$ -x $La(Mg_{2/3}Nb_{1/3})O_3$ (BLMN) have been investigated by measuring the dielectric constant${\varepsilon}r)$, Q value and temperature coefficient of resonant frequency$({\tau}f)$ and by observing the crystal structure using high resolution transmission electron microscopy (HRTEM). Microwave dielectric properties showed characteristic features for specific composition. Dielectric constant$({\varepsilon}r)$ showed maximum value at the composition which corresponds to the phase boundary between 1:2 ordered and 1:1 ordered structure. The increase in ${\varepsilon}_r$ may be caused by the rattling of ions by incorporating smaller ions and the disordered structure. The variation of temperature coefficient of resonant frequency${{\tau}_f)$ was investigated in terms of oxygen octahedra tilting.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.637-640
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• 2017

In this study, $(1-x)(Na_{0.52}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3-x(Bi_{0.5}(Na_{0.7}K_{0.3})_{0.5}ZrO_3$ ceramics were fabricated by BNKZ substitution using a conventional solid-state method to develop excellent lead-free piezoelectric ceramics for piezoelectric actuators; their dielectric and piezoelectric properties were then investigated. All specimens were in the orthorhombic phase. $NKL-NSTO_3$ ceramics with x=0.01 showed excellent piezoelectric properties. The density (${\rho}$), piezoelectric charge constant ($d_{33}$), planar piezoelectric coupling coefficient ($k_p$), mechanical quality factor ($Q_m$), and dielectric constant (${\varepsilon}_r$) had optimized values of $4.56g/cm^3$, 208 pC/N, 0.43, 96, and 975, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.1
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• pp.105-110
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• 2005

In this paper, a new technique to reduce the phase noise in microwave oscillators is proposed using the resonant characteristics of the Photonic Bandgap(PBG). We applied PBG structure to ground of the microstrip line resonator with the low Q(Quality factor). Therefore, we improved about 10 dBc in contrast to phase noise characteristic of the conventional microstrip line oscillator at 2.4 GHz ＠ 100 MHz offset. Output power is 7.09 dBm.

• ETRI Journal
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• v.31 no.4
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• pp.478-480
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• 2009

The design of a CMOS clamped-clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 ${\mu}m$ CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a $48{\times}10^8$ resonant frequency-quality factor product ($Q{\times}f_{res}$) in air conditions, which is quite competitive in comparison with existing CMOS-MEMS resonators.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.365-366
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• 2002

A novel TEM resonator coil was developed for the imaging of small animals. The functional elements of the TEM resonator were 8 inner conductors, distributed in a cylindrical pattern and connected at the ends with capacitors to the cylindrical outer shield. The TEM resonator coil with cavity elements was robust to the surrounding influences due to the self-shielding structure. The TEM resonator coil with high Q factor could provide high quality MR images at 3.0T MRI system. Also, the TEM resonator coil has an advantage for a fine tune with length adjustment of each cavity elements. Thus, The TEM resonator coil at 3.0T, even higher field could be used in the research studies.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.6
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• pp.157-162
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• 2011

In this study, we design and implement a cavity filter for the Korea T-DMB broadcasting transmitter station and repeater system. HFSS 3 dimensional field simulation tool is used for this study. T-DMB filter has to be high quality factor Q, and cavity filter is applying in T-DMB system due to high handling power. We use HFSS simulation tool for design to obtain exact resonant frequency with easy design. A cavity filter is implemented based on the simulated results, and test results are compared with simulations. Measured resonant frequency and bandwidth are 211.8MHz and 0.1MHz, and correspond with design values.

• International journal of advanced smart convergence
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• v.9 no.1
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• pp.172-176
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• 2020

The implementation of a low phase noise voltage controlled oscillator (VCO) is important for the signal integrity of wireless communication terminal. A low phase noise wideband VCO for a wireless local area network (WLAN) application is presented in this paper. A 6-bit coarse tune capacitor bank (capbank) and a fine tune varactor are used in the VCO to cover the target band. The simulated oscillation frequency tuning range is from 8.6 to 11.6 GHz. The proposed VCO is desgned using 65 nm CMOS technology with a high quality (Q) factor bondwire inductor. The VCO is biased with 1.8 V VDD and shows 9.7 mA current consumption. The VCO exhibits a phase noise of -122.77 and -111.14 dBc/Hz at 1 MHz offset from 8.6 and 11.6 GHz carrier frequency, respectively. The calculated figure of merit(FOM) is -189 dBC/Hz at 1 MHz offset from 8.6 GHz carrier. The simulated results show that the proposed VCO performance satisfies the required specification of WLAN standard.