• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.336-343
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• 2018

We herein present the design and fabrication of a Rx core chip operating in the X-band (10.5~13 GHz) using Win's commercial $0.25-{\mu}m$ GaAs pHEMT process technology. The X-band core chip comprises a low-noise amplifier, a four-bit phase shifter, and a serial-to-parallel data converter. The size is $1.75mm{\times}1.75mm$, which is the state-of-the-art size. The gain and noise figure are more than 10 dB but less than 2 dB, and both the input and output return losses are less than 10 dB. The RMS phase error is less than $5^{\circ}$, and the P1dB is 2 dBm at 12.5 GHz, the performance of which is equivalent to other GaAs core chips. The fabricated core chip was packaged in a QFN package type with a size of $3mm{\times}3mm$ for the convenience of assembly. We confirmed that the performance of the packaged core chip was almost the same as that of the chip itself.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.6
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• pp.633-643
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• 2013

GDS format files, as well as layout of the chip are noticeably needed so as to analyze the PDN (Power Delivery Network) inside of IC; however, commercial IC in the market has not supported design information which is layout of IC. Within this, in terms of IC having on-chip PDN, characteristic of inside PDN of the chip is a core parameter to predict generated noise from power/ground planes. Consequently, there is a need to scrutinize extraction method for unknown PDN of the chip in this paper. To extract PDN of the chip without IC circuit information, the de-embedding test vehicle is fabricated based on IEC62014-3. Further more, the extracted inside PDN of chip from de-embedding technique adopts the Co-simulation model which composes PCB, QFN (Quad-FlatNo-leads) Package, and Chip for the PDN, applied Co-simulation model well corresponds with impedance from measured S-parameters up to 4 GHz at common measured and simulated points.