• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2116-2118
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• 2000

In the technique of Q-switching, very fast electronically controlled optical shutters can be made by using the electro-optic effect in crystals or liquids. The driver for the Pockels cell must be a high-speed, high-voltage switch which also must deliver a sizeable current. Common switching techniques include the use of vacuum tubes, cold cathode tubes, thyratrons, SCRs, and avalanche transistors. Semiconductor devices such as SCRs, avalanche transistors, and MOSFETs have been successfully employed to drive Pockels cell Q-switch. In this study, a simple driver for the Pockels cell Q-switch was developed by using SCRs, pulse transformer and TTL ICs. The Pockels cell Q-switch which was operated by this driver was employed in pulsed Nd:YAG laser system to investigate the operating characteristics of this Q-switch. And we have investigated the output characteristics of this Q-switch as a function of the Q-switch delay time to Xe flashlamp current on.

• Journal of Digital Contents Society
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• v.10 no.2
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• pp.199-207
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• 2009

The Q-switching the shutter or the different optical science element puts in within the laser light resonator and the storehouse departs from the within the resonator it loses the mortar and the reversal distribution which when is sufficient creates from within the active medium, opens the shutter instantaneously and it is to do to be made to emit with the light where the energy which is accumulated within the resonator is strong very. Like this Q-switching of laser resonator--It decreases factor increasing suddenly to make. To method of Laser Q-switching mechanical switching methods, electro-optic switching methods and switching by saturable absorber methods, acousto-optic switching method etc. 4 kind are being used on a large scale. In these people the conversion which is electric in compliance with the effect which is electrooptics is widely being used the Q-switching pulse of short pulse width because being it will be able to create. Consequently, Pockel cell where it has the quality of electrooptics effect) the Q-it is become known that it is suitable it uses with switch. From the research which it sees FET and one-chip microprocessor where it is a switching element and pulse transfomer to plan and produce pockel cell Q-switch driving gears, pulse style Nd: It applied in YAG Laser system and it investigated and researched the operating characteristic of the Q-switch. Also, the Q-switch leads and Nd where it is output: YAG with forecast in compliance with a theoretical calculation it comes to buy laser beam side politics it compared and laser beam qualities which had become Q-switching it analyzed.

• Korean Journal of Optics and Photonics
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• v.24 no.2
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• pp.58-63
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• 2013

A theoretical analysis of the impact of rise time of a Q-switch on the output pulse performance is carried out in an Ytterbium-doped actively Q-switched fiber laser. The finite difference time domain (FDTD) method is used to numerically simulate the Q-switched fiber laser. It is shown that stable Gaussian-like pulse shape can be generated when the Q-switch rise time is increased and pulse repetition rate is enlarged.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.375-379
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• 2003

In this paper, a novel design of multilayer ceramic-based Transmit/Receive (T/R) switch using Low Temperature Co-fired Ceramic (LTCC) technology have been presented. Compact T/R switch has been designed by transforming quarter-wave transmission line to its lumped equivalent circuit. Especially, high-Q three dimensional inductors with double strip have been proposed and incorporated. The proposed inductor has been modeled by multi-conductor coupled lines. A measured inductor quality factor (Q) of 80 and a Self-Resonance Frequency (SRF) of 6.6 GHz have been demonstrated. The inductor library has been incorporated into the design of WCDMA T/R switch.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.3
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• pp.7-10
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• 1976

To eliminate some difficulties encountered in the operation of $LiNbO_3$ crystal as a Q-switch for generating a single pulse Nd-YAG laser, the operational characteristics of the crystal, was investigated. Also a simple method for solving the difficulties was presented.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.173-178
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• 2015

In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.

• Journal of Power Electronics
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• v.16 no.5
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• pp.1716-1724
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• 2016

This paper proposes both an active-switched quasi-Z-source inverter (AS-qZSI) and an extended active-switched qZSI (EAS-qZSI), which are based on the classic qZSI. The proposed AS-qZSI adds only one active switch and one diode to the classic qZSI for increasing the voltage boost capability. Compared with other topologies based on the switched-inductor/capacitor qZSI, the proposed AS-qZSI requires fewer passive components in the impedance network under the same boost capability. Additionally, the proposed EAS-qZSI is designed by adding one inductor and three diodes to the AS-qZSI, which offers enhanced boost capability and lower voltage stress across the switches. The performances of the two proposed topologies are verified by simulation and experimental results obtained from a prototype with a 32-bit DSP built in a laboratory.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.1053-1057
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• 1997

Laser thin film process with a Q-switch pulsed YAG laser was performed for micro machining. In this research, we performed basic Cr thin film on glass substrates removal machining experiments. Form experiments, it happens not only evaporration of thin film but also spatter and cohesion of melting substance in working region, when machining a Cr thin film by Q-switch YAG laser beam irradiation. Critical energy of surface irradiation type by irradiation direction of laser in a face composing thin film on the glass is higher than that of back irradiation type, but the latter is favorable because of spatter appearance. In case of image formation position when laser beam is irradiated, the defocus is permitted to a certain extent within forcus depth. Ifexceeds focus depth, formation of pattern is vanishing step by step.

• Journal of Computing Science and Engineering
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• v.8 no.3
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• pp.129-136
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• 2014

This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.121-122
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• 2008