• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.743-745
• /
• 2002

Pyroelectric and dielectric properties of modified PZT thin film and bulk ceramics were studied. In case of bulk specimens were prepared by conventional ceramic process and thin films with same composition and (111) preferred orientation were prepared by the sol-gel process. Their crystal structure, pyroelectric and dielectric properties were investigated after poling at $150^{\circ}C$ for 30 min for bulk ceramics and no poling treatment, respectively. Dielectric constants and losses of bulk and thin film were 600, 875 and 0.028, 0.025, respectively. Pyroelectric coefficients obtained were $50nC/cm^2K$ and $30nC/cm^2K$, respectively.

• Journal of the Korean Ceramic Society
• /
• v.32 no.6
• /
• pp.748-760
• /
• 1995

Pyroelectric properties, figure of merits, and the other properties of the Pb(Zn1/3Nb2/3)O3-Pb(Fe1/2Nb1/2)O3 system, as expected to have excellent pyroelectric properties in the operating temperature range of pyroelectric type infrared sensor, were investigated. In the Pb(Zn1/3Nb2/3)O3-Pb(Fe1/2Nb1/2)O3 system, suppression of the pyrochlore phase depended on sintering condition, as like sintering temperature, holding time, sintering atmosphere. The specimen, sintered by the same composition atmosphere powder at 105$0^{\circ}C$ for 1.5h, possessed the best physical property. It was found that the piezoelectric parameters were mainly depended on the amount of spontaneous polarization and then the 0.2PZN-0.8PFN showed the best pyro- and piezoelectric properties. In terms of the experimental method, two pyroelectric-testing methods, i.e. static and dynamic methods, had a same tendency. Also the result of pyroelectric testing by the static method indicated that the diffuse phase transitiion resulted in the temperature difference of phase transition between dielectric constant and pyroelectric coefficient.

• Journal of the Korean Ceramic Society
• /
• v.31 no.8
• /
• pp.841-848
• /
• 1994

The sintering behavior of La-modified PbTiO3 ceramics was investigated in order to improve the poor sinterability of PbTiO3. Addition of La improved the sinterability. It was confirmed that this improvement was due to the decrease in tetragonality ratio c/a of crystal lattice. The variations of dielectric constant and pyroelectric coefficient were measured with temperature. It was observed that with the increase of La content, Curie temperature decreased and dielectric constant at room temperature increased. La-modified PbTiO3 ceramics had smaller pyroelectric figure of merits than those of pyroelectric materials in use. The effects of grain size on dielectric and pyroelectric properties were also investigated. The change of grain size had effect on maximum dielectric constant and pyroelectric coefficient, but is had little effect on pyroelectric figure of merit at room temperature. The closer examination near ferro-paraelectric phase transition temperature revealed that the behavior of phase transition approached a more relaxor character with the increase of La content and the decrease of grain size.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.10
• /
• pp.35-42
• /
• 2002

Modulation frequency dependences of the pyroelectric properties of PLT (P $b_{1-x}$ L $a_{x}$ $Ti_{1-x}$ 4/ $O_3$) thin films with La concentrations of 5, 10 and 15㏖% have been investigated by using the dynamic method. The PLT thin film with 10㏖% of the La concentration (PLT(10) thin film) shows the most excellent pyroelectric properties among the films. For PLT(10) thin film, the pyroelectric coefficient shows the maximum value of 6.6$\times$10$^{-9}$ C/$\textrm{cm}^2$ㆍK without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03$\times$10$^{-11}$ Cㆍcm/J and 1.46$\times$10$^{-9}$ Cㆍcm/J, respectively. Voltage responsivity corresponding to the pyroelectric voltage is almost constant at low modulation frequency and decreases in proportional to frequency at high modulation frequency. Voltage responsivity is 5.15 V/W at 8Hz. Noise equivalent power (NEP) and specific detectivity ( $D^{*}$) of the PLT(10) thin film are 9.93$\times$10$^{-8}$ W/H $z^{1}$2/ and 1.81$\times$10$^{6}$ cmH $z^{1}$2/W at the frequency of 100Hz, respectively. The results indicate that PLT(10) thin film is very suitable for pyroelectric IR sensors.s.s.

• Journal of the Korean Ceramic Society
• /
• v.33 no.8
• /
• pp.863-870
• /
• 1996

Fabricated modified PZT system for pyroelectric IR sensor were analyzed and characterized for dielectric piezoelectric and pyroelectric properties. Particle size and distribution of source powders were controlled by attrition milling process. 0.05PSS+yPT+(0.95-y)PZ+0.4 wt%MnO2 system was fabricated and investigated sintering density crystal structure and micro-structure through sintering conditions sintering temperature and sintering atmosphere. The poled sintered system of y=0.11 showed the lowest dielectric constant. The dielectric constants were increased with increasing y-mole ratio. The pyroelectric properties of modified PZT systems which were assembled to TO-5 package were measured by IR measurement system average out-voltage of 0.05PSS+0.1PT+0.84PZ+ wt%MnO2 was 3V.

• Applied Science and Convergence Technology
• /
• v.24 no.6
• /
• pp.215-218
• /
• 2015

A pyroelctric properties of Ni(x)-doped PMNT systems were analyzed. Modified PMNT samples were prepared using the columbite structure method. Pyroelectric current, polarization, dielectric constant and dissipation factor of Ni-doped PMNT samples were measured as a function of temperature. By adding a small amount of NiO, pyroelectricity of PMNT is increased. Unlike the normal $ABO_3$ ferroelectric, Ni-doped PMNT showed properties for relaxor ferroelectric of causing the successive phase transition over a wide temperature. The optimum conditions for obtaining compositions with improvement ferroelectric properties are a nominal addition of 0.02 mole% Ni. Also, Ni-doped PMNT ferroelectric showed excellent pyroelectric figures of merit in the vicinity of room temperature. The pyroelectric coefficient ($0.00524C/m^2K$ at $25^{\circ}C$) and figures of merit ($F_v{\sim}0.039m^2/C$ and $F_d{\sim}0.664{\times}10^{-4}Pa^{-1/2}$) of composition PMNT with 0.02 mole% Ni are comparable to the earlier reports on lead-type pyroelectrics.

• Journal of the Korean Ceramic Society
• /
• v.27 no.5
• /
• pp.605-612
• /
• 1990

In Pb1-xLax(Zry, Tiz)1-x/4O3 system, it selects the composition 7/65/35 (x=7, y=65, z=35) that was reported to have eminent Pyroelectric properties, and that is sintered with PbZrO3＋0.3wt.% PbO2 atmosphere powder. From the sintered ceramic and Poly Vinyl Alcohol, the thin wafers are fabricated with 0-3connectivity, and they are researched in Pyroelectric properties and the others according to volume ratio between ceramic and polymer. It was possible to fabricate the film containing ceramic up to 80vol% in PVA polymer. The increment of PLZT ceramic volume fraction improve the pyroelectric coefficient of the composite. On Pyroelectric coefficient and the figure of merit, a little inflection caused by glass point(Tg) of PVA appeared. The degree of inflection is proportioned to the amount of PVA.

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.609-612
• /
• 1998

Pyroelectric properties of rhombohedral $Pb(ZrxTi_1-x)O_3ceramics$ with various Zr/Ti ratios of 84/16, 87/13, 90/10, and 93/7 are investigated using dynamic method. The response characteristics of PZT samples are examined by considering frequency dispersion. Since the reorientation of the grain does not the influence on the increase of frequency at low frequency (2~200Hz), the maximum pyroelectric response can be obtained with the change of spontaneous polarization. However, the pyroelectric response of PZT samples could be reduced as the spontaneous polarization decreases due to the restrain of the reorientation of the grain with the increasing of requency at high frequency (200~2000Hz). We have obtained the good pyroelectric response in the PZT sample having 84/16 Zr/Ti ratio, then the pyroelectric coefficient (${\gamma}$) and the figure of merit (FV) were $17.3nC/\textrm{cm}^2K$ and 2.28$\times$10-11Ccm/J, respectively. The noise equivalent power (NEP), the detectivity (D*) were 1.21$\times$10-7W/Hz$\frac{1}{2}$ and 8.26$\times$106cmHz$\frac{1}{2}$/W, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.7 no.3
• /
• pp.454-460
• /
• 2003

The modulated frequency dependence on the pyroelectric properties of LiTaO$_3$ single crystal was investigated by the dynamic method. The pyroelectric coefficient of LiTaO$_3$ single crystal was 2.1${\times}$$10^{-8}$/$\textrm{cm}^2$ㆍK. and figure of merits for the responsivity and the detectivity were 1.31${\times}$$10^{-10}$Cㆍcm/J and 1.47${\times}$$10^{-8}$C\ulcornercm/J. respectively. The voltage responsivity corresponded with the pyroelectric voltage exhibited the highest value as about 165V /W at 4Hz and then was in inverse proportion to the frequency over 20Hz. The noise equivalent power and the detectivity at 4Hz were 8.4${\times}$$10^{-9}$ W/Hz$^{1}$2/ and 2.2${\times}$$10^{7}$ cmㆍHz$^{1}$2//W, respectively. Therefore, we could found that LiTaO$_3$ single crystal shows a excellent pyroelectric properties in low frequency region for the human body detection.tection.

• Journal of the Korean Ceramic Society
• /
• v.35 no.7
• /
• pp.679-684
• /
• 1998

Dielectricand pyroelectric properties of {{{{ { { {Ba }_{0.67 }Sr }_{0.33 } }`TiO_{3 } ^{ } }} (BST) thin plates and films were investigated. For BST thin plates maximum dielectric constant and pyrolelectric coefficient were observed at around 24$^{\circ}C$ and pyroelectric characteristics were improved as applied bias field was increased. When the electric field of 4kV/cm was applied to the thin plates sintered at 140$0^{\circ}C$ the pyroelectric coefficients over 4$\times$10-7C/{{{{ { cm}^{2 }K }} were obtained in the range of 0-4$0^{\circ}C$ BST thin films deposited using rf magnetron sputtering showed [001] preferred orientation at substrate temperatures above 50$0^{\circ}C$ On the contrary to the thin plates the dielectric constants of the thin films gradually increased above 15$^{\circ}C$ and decreased as applied bias field in-creased. The pyroelectric coefficients of thin films were lower than 1/10 those of thin plates.