• 제목/요약/키워드: Pulsed-laser ablation

검색결과 128건 처리시간 0.024초

Michelson 간섭계를 응용한 미세 상변화 현상 계측 (Probing of Microscale Phase-Change Phenomena Based on Michelson Interforometry)

  • 김동식;박희권
    • 대한기계학회논문집B
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    • 제25권8호
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    • pp.1140-1147
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    • 2001
  • Experimental schemes that enable characterization of phase-change phenomena in the microscale regime are essential for understanding the phase-change kinetics. Particularly, monitoring rapid vaporization on a submicron length scale is an important yet challenging task in a variety of laser-processing application, including steam laser cleaning and liquid-assisted material ablation. This paper introduces a novel technique based on Michelson interferometry for probing the liquid-vaporization process on a solid surface heated by a KrF excimer laser pulse(λ=248nm, FWHM=24ns) in water. The effective thickness of a microbubble layer has been measured with nanosecond time resolution. The maximum bubble size and growth rate are estimated to be of the order of 0.1㎛ and 1m/s, respectively. The results show that the acoustic enhancement in the laser induced vaporization process is caused by bubble expansion in the initial growth stage, not by bubble collapse. This work demonstrates that the interference method is effective for detecting bubble nucleation and microscale vaporization kinetics.

펄스 레이저 증착법으로 제작된 $Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) 박막의 화학양론겅인 변화에 대한 연구 (Study of Stoichiometrical Changes in Pulsed Laser Deposited $Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) Thin Films)

  • 은동석;이상렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 D
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    • pp.1309-1311
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    • 1998
  • $Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) thin film has been regarded as one of the most promising materials for applications of sensor, optic devices, and memory devices, because it exhibits various properties as changing the amount of Lanthanum component. So we have prepared PLT thin films on platinized silicon (actually Pt/Ti/$SiO_2$/Si) substrates in oxygen ambient by laser ablation. Energy dispersive X-ray (EDX) revealed that the stoichiometric thin films were fabricated.

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레이저 어블레이션법으로 제작될 (Ba, Sr)TiO$_3$ 박막의 구조 및 유전특성에 관한 연구 (A Study on Structural and Dielectric Properties of the (Ba,Sr)TiO$_3$ Thin Films Prepared by Laser Ablation)

  • 주학림;김성구;장낙원;마석범;백동수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.122-125
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    • 1999
  • (Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature and oxygen pressure by Pulsed Laser Deposition(PLD). Energy Dispersive Spectroscopy(EDS) proved that BST thin films prepared by PLD have almost the same stoichiometric composition as the BST target materials. This BST thin films were fully crystallized at $650^{\circ}C$, 300mTorr oxygen pressure and showed a maximum dielectric constant value of $\varepsilon$$_{t}$=684 and dielectric loss was 0.01 at 75$0^{\circ}C$, 300mTorr oxygen pressure.ssure.

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Preparation and Characterization of β-C3N4 in Presence of Seed Carbon Nitride Films Deposited by Laser-Electric Discharge Method

  • Kim, J.I.;Zorov, N.B.;Burdina, K.P
    • Transactions on Electrical and Electronic Materials
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    • 제3권3호
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    • pp.29-33
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    • 2002
  • A procedure was developed for preparing bulk carbon nitride crystals from a polymeric $\alpha$ -C$_3$N$\_$4.2/ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma combined with pulsed laser ablation of graphite target. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and x-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrate that the nitrogen composition in $\alpha$ -C$_3$N$\_$4.2/ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~45%. The thermobaric experiments were performed at 10-77 kbar and 350-1200 $\^{C}$.

Annealing Effects of Laser Ablated PZT Films

  • Rhie, Dong-Hee;Jung, Jin-Hwee;Cho, Bong-Hee;Ryutaro Maeda
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.528-531
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    • 2000
  • Deposition of PZT with UV laser ablatio was applied for realization of thin film sensors and actuators. Deposition rate of more than 20nm/min was attained by pulsed KrF excimer laser deposition, which is fairly better than those obtained by the other methods. Perovskite phase was obtained at room temperature deposition with Fast Atom Beam(FAB) treatment and annealing. Smart MEMS(Micro electro-mechanical system) is now a suject of interest in the field of micro optical devices, micro pumps, AFM cantilever devices etc. It can be fabricated by deposition of PZT thin films and micromachining. PZT films of more than 1 micron thickness is difficult to obtain by conventional methods. This is the reason why we applied excimer laser ablation for thin film deposition. The remanent polarization Pr of 700nm PZT thin film was measured, and the relative dielectric constant was determined to about 900 and the dielectric loss tangent was also measured to be about 0.04. XRD analysis shows that, after annealing at 650 degrees C in 1 hour, the perovskite structure would be formed with some amount of pyrochlore phase, as is the case of the annealing at 750 degrees C in 1 hour.

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Nanomaterials for Advanced Electrode of Low Temperature Solid Oxide Fuel Cells (SOFCs)

  • Ishihara, Tatsumi
    • 한국세라믹학회지
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    • 제53권5호
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    • pp.469-477
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    • 2016
  • The application of nanomaterials for electrodes of intermediate temperature solid oxide fuel cells (SOFC) is introduced. In conventional SOFCs, the operating temperature is higher than 1073 K, and so application of nanomaterials is not suitable because of the high degradation rate that results from sintering, aggregation, or reactions. However, by allowing a decrease of the operating temperature, nanomaterials are attracting much interest. In this review, nanocomposite films with columnar morphology, called double columnar or vertically aligned nanocomposites and prepared by pulsed laser ablation method, are introduced. For anodes, metal nano particles prepared by exsolution from perovskite lattice are also applied. By using dissolution and exsolution into and from the perovskite matrix, performed by changing $P_{O2}$ in the gas phase at each interval, recovery of the power density can be achieved by keeping the metal particle size small. Therefore, it is expected that the application of nanomaterials will become more popular in future SOFC development.

Conducting ZnO Thin Film Fabrication by UV-enhanced Atomic Layer Deposition

  • 김세준;김홍범;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.211.1-211.1
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    • 2013
  • We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

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Thermal shock behaviors of TiN coatings on Inconel 617 and Silicon wafer substrates with finite element analysis method

  • Lee, Ki-Seuk;Jeon, Seol;Cho, Hyun;Lee, Heesoo
    • 한국결정성장학회지
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    • 제26권2호
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    • pp.67-73
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    • 2016
  • The degradation behaviors of TiN coating layers under thermo-mechanical stress were investigated in terms of comparison of finite element analysis (FEA) and experimental data. The coating specimen was designed to quarter cylinder model, and the pulsed laser ablation was assumed as heat flux condition. The FEA results showed that heat accumulation at the center of the laser-ablated spot occurred and principle stress was concentrated at the lower region of the coating layer. The microstructural observation revealed that surface melting and decrease of the coating thickness occurred in the TiN/Inconel 617 and the interfacial cracks formed in the TiN/Si. The delamination was caused by the mechanical stress from the center to the outside of the ablated spot as the FEA results expected. It was considered that the improvement of the thermal shock resistance was attributed to higher thermal conductivity of Si wafer than that of Inconel 617.

Photoluminescence of ZnGa2O4-xMx:Mn2+ (M=S, Se) Thin Films

  • Yi, Soung-Soo
    • Transactions on Electrical and Electronic Materials
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    • 제4권6호
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    • pp.13-16
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    • 2003
  • Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

CNT-PDMS Composite Thin-Film Transmitters for Highly Efficient Photoacoustic Energy Conversion

  • Song, Ju Ho;Heo, Jeongmin;Baac, Hyoung Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.297.2-297.2
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    • 2016
  • Photoacoustic generation of ultrasound is an effective approach for development of high-frequency and high-amplitude ultrasound transmitters. This requires an efficient energy converter from optical input to acoustic output. For such photoacoustic conversion, various light-absorbing materials have been used such as metallic coating, dye-doped polymer composite, and nanostructure composite. These transmitters absorb laser pulses with 5-10 ns widths for generation of tens-of-MHz frequency ultrasound. The short optical pulse leads to rapid heating of the irradiated region and therefore fast thermal expansion before significant heat diffusion occurs to the surrounding. In this purpose, nanocomposite thin films containing gold nanoparticles, carbon nanotubes (CNTs), or carbon nanofibers have been recently proposed for high optical absorption, efficient thermoacosutic transfer, and mechanical robustness. These properties are necessary to produce a high-amplitude ultrasonic output under a low-energy optical input. Here, we investigate carbon nanotube (CNT)-polydimethylsiloxane (PDMS) composite transmitters and their nanostructure-originated characteristics enabling extraordinary energy conversion. We explain a thermoelastic energy conversion mechanism within the nanocomposite and examine nanostructures by using a scanning electron microscopy. Then, we measure laser-induced damage threshold of the transmitters against pulsed laser ablation. Particularly, laser-induced damage threshold has been largely overlooked so far in the development of photoacoustic transmitters. Higher damage threshold means that transmitters can withstand optical irradiation with higher laser energy and produce higher pressure output proportional to such optical input. We discuss an optimal design of CNT-PDMS composite transmitter for high-amplitude pressure generation (e.g. focused ultrasound transmitter) useful for therapeutic applications. It is fabricated using a focal structure (spherically concave substrate) that is coated with a CNT-PDMS composite layer. We also introduce some application examples of the high-amplitude focused transmitter based on the CNT-PDMS composite film.

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