• 전산구조공학
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• 제9권2호
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• pp.143-151
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• 1996

구조 및 전기적 제약조건을 고려한 전자력 발사기의 최적설계에 대해 연구하였다. 펄스형 대전류가 흐르는 발사기의 단면적이 최소화되었으며 각 요소(레일, 측면벽, 세라믹 및 강철)의 허용응력과 예하중을 고려하였다. 전기적 제약조건은 발사기의 성능을 저하시키는 와전류 효과를 방지하기 위한 세라믹의 두께로 정하였다. 90mm발사기의 설계에서 응력해석과 최적화는 ANSYS코드를 사용하여 수행되었다. 예하중을 받는 최적설계에서는 예하중을 받지 않는 최적설계보다 53%의 단면적이 감소되었다. 레일의 원호각이 45.deg.일때 발사기의 성능이 가장 양호하다. 레일의 원호각이 45.deg.일때 Fahrenthold 연구결과와 비교하여 9%의 변형량 감소와 10.4%의 변형량 감소를 얻었고, 예하중도 186Mpa에서 59.8Mpa로 감소되었다. 연구결과는 설계 요구조건을 충분히 만족시켜 주고 있음을 보여 주었다.

• 한국표면공학회지
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• 제49권1호
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• 한방안이비인후피부과학회지
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• 제34권4호
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• pp.37-48
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• 2021

Objectives : The purpose of this study is to investigate treatment trends on hyperopia of chinese traditional medicine. Methods : We searched papers using CNKI and Pubmed. The keyword used on searching was 'Hyperopia' combined with 'Chinese medicine', 'Acupuncture' and 'herbal medicine'. Searching duration was not specified. The search was conducted from January 2020 to July 2021, and the final selected papers were from 1983 to 2014. Results : Studies found in CNKI were 27 and 20 sutdies were excluded. Studies found in Pubmed were 57 and 57 studies were excluded. Finally 7 sutdies were selected and analyzed. Five studies of selected ones were case reports and two were review papers. Among 5 case reports, two of them used herbal medicine with pressing auricular acupoints with beans. Another one used electronic plum acupuncture only. Another one used acupuncture with electronic heat and pulsed current stimulation. The other one compared acupuncture alone and acupuncture combined with massage. All studies report high efficacy rates on treatments. Conclusions : According to this study we found the possibility of acupuncture and herbal medicine on hyperopia. We expect that further studies will be conducted and the results of them could be actively applied to clinical treatments.

• 한국표면공학회지
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• 제53권6호
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• pp.351-359
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• 2020

Formation behavior and properties of PEO (Plasma Electrolytic Oxidation) film on AA2024 were investigated under application of pulsed current as a function of Na3PO4 concentration in 0.05 M Na2SiO3 solution by analyzing voltage-time behavior, in-situ observation of arc generation, observation of surface morphology and measurements of thickness and surface roughness. Arc generation voltage decreased with increasing Na3PO4 concentration. Color difference of PEO films between edge and inner part disappeared by addition of Na3PO4. It was also observed that size of nodules on PEO film decreased with increasing Na3PO4 concentration. Thickness of PEO films formed on AA2024 increased with increasing Na3PO4 concentration. Whereas, surface roughness of PEO films decreased with increasing Na3PO4 concentration up to 0.05 M of Na3PO4 which is attributed to the deceased size of nodules on the PEO films. However, the surface roughness increased with increasing Na3PO4 concentration more than 0.07 M of Na3PO4 which seems to be due to the formation of non-uniform PEO films with smooth surface and large size pores formed by orange-colored big arcs. The experimental results suggest that added sodium phosphate less than 0.2 M in an alkaline silicate solution can contribute to the formation of relatively thick and uniform thickness of PEO films under arc generation voltage lower than 300 V.

• 공업화학전망
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• 제24권5호
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• pp.1-14
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• 2021

유무기 하이브리드 금속-할라이드계 페로브스카이트(organic-inorganic metal halide perovskite) 페로브스카이트 반도체 소재는 광전자 소자와 소재 연구에 새로운 연구 흐름을 만들고 있다. 태양전지 성능이 불과 과거 몇 년 사이의 짧은 연구 기간에도 불구하고, 광-전 변환 소자 중에서도 단일 소자와 적층 소자(tandem)에서 높은 광-전 변환 효율을 나타내기 때문이다. 이러한 급격한 연구 성과와 성장에도 불구하고, 페로브스카이트 소재의 다양한 광전자 특성의 평가와 결과에 대한 논의가 필요한 상황이다. 특히 내부 이온 이동이 광전자 원거리 이동 특성 평가와 해석에 영향을 주는 경우, 페로브스카이트 소재를 기반으로 한 다양한 광전자 소자의 성능 향상과 해석에 여전히 모호함을 준다. 달리 얘기하면, 이 소재의 기초 특성을 이해하고자 적용하는 다양한 기존 특성 평가 분석법의 활용과 해석에도 복잡한 영향을 미치고 있다고 할 수 있다. 이러한 페로브스카이트 소재 내에서 광전자 원거리 이동을 측정하는 새로운 방법을 소개하고자 한다. 첫 번째 방법으로, Quasi-steady 상태에서 광전도도를 전기적 특성으로 측정하고, 광조사 하에 투과 및 반사를 광학적으로 측정하여, 전도도와 광전자 밀도를 동시에 평가하는 방법으로, photo-induced transmission and reflection (PITR) 분광분석법이다. 이 분광분석법은 실제 소자의 구동조건을 구현한 상태에서 광전자의 원거리 이동에서 발생하는 광전자 밀도 변화를 반영한 광전자 이동도 특성 평가라는 장점을 가지고 있다. 두 번째 방법으로, 기존의 연속 전압 인가 방법 대신 펄스형 전압 인가 방식을 도입하는 방법으로, pulsed voltage space charge limited current (PV-SCLC) 분석법이다. 이는 펄스형 전압 인가 방법으로 이온의 이동을 최소화하여, 전류-전압 측정에서 히스테리시스가 없고 측정결과의 재현성과 신뢰도가 매우 높은 장점이 있다.

• Nuclear Engineering and Technology
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• 제53권7호
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• pp.2289-2294
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• 2021

In the present study, an original spark plasma sintering-reactive synthesis (SPS-RS) method for minerallike ceramic materials based on SrAl₂Si₂O₈ feldspar-like skeleton structure was used for the first time, promising solid-state matrices for reliable immobilization of high-energy ⁹⁰Sr. The method is based on the "in-situ" reaction of a mixture of SrO, Al₂O₃ and SiO₂ oxides when heated by a unipolar pulsed current under compacting pressure. The phase and elemental composition structure were studied. The dynamics of the consolidation of the reaction mixture of oxides was studied in the range of 900-1200 ℃. The study found the temperature of the high-speed (minutes) SPS-RS formation of single-phase SrAl₂Si₂O₈ composition ceramic in the absence of intermediate reaction products with a relative density of up to 99.2% and compressive strength up to 145 MPa and a strontium leaching rate of 10^-4g/cm²·day.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.340-340
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• 2002

In an effort to develop alternative single buffer layer technology for YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) coated conductors, we have investigated both LaMnO$_3$, (LMO) and La$_2$Zr$_2$O$_{7}$ (LZO) as potential buffer layers. High-quality LMO films were grown directly on textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. Highly textured LZO buffers were grown on textured Ni substrates using sol-gel alkoxide processing route. YBCO films were then grown on both LMO and LZO buffers using pulsed laser deposition. Detailed X-ray studies have shown that YBCO films were grown on both LMO and LZO layers with a single epitaxial orientation. A high J$_{c}$ of over 1 MA/cm$^2$ at 77 K and self-field was obtained on YBCO films grown on both LMO-buffered Ni or Ni-W substrates, and also on LZO-buffered Ni substrates. We have identified LaMnO$_3$ as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films. Similarly we have also demonstrated the growth of high J$_{c}$ YBCO films on all solution buffers. We will discuss in detail about our buffer deposition processes. processes.s.s.s.s.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.17-17
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• 1998

Synchrotron radiation is produced when charged particles moving with relativistic velocities a are accelerated - for example, deflected by the bending magnets which guide the electron or p positrons in circular accelerators or storage rings. By using special focusing magnetic lattices i in the particle accelerators it is possible to make the dimensions of the particle beam very small with a hi맹 charge density which results in a light source with high b디lIiance. Synchrotron light h has important properties which make it ideal for a wide range of investigations in surface s science. The fact that the spectrum of electromagnetic radiation emitted in a bending magnet e extends in a continuum from the 얹r infra red region to hard x-rays means that it is id않I for a v variety of spectroscopic studies. Since there are no convenient lasers, or other really bright l light sources, in the vacuum ultraviolet and soft x-ray re.밍ons the development of synchrotron r radiation has enabled enormous advances to be made in this di펌C비t spectr따 re밍on. P Polarization-dependent measurements, for ex없nple ellipsometry or circular dichroism studies a are possible because the radiation has a well-defined polarization - linear in the plane of orbit w with additional right-circular, or left-circular, components for emission an생es above, or below, t the horizontal, respectively. Since the synchrotron light is emitted from a bunch of charge c circulating in a ring the light is emitted with a well-defined time structure with a short flash of l light every time a bunch passes an exit port. The time structure depends on the size of the ring a and the number and sequence of filling of the bunches. A pulsed light source enables time¬r resolved studies to be performed which provide direct information on the lifetimes and decay m modes of excited states and in addition opens up the possibility of using time of flight t techniques for spectroscopic studies. The fact that synchrotron radiation is produced in a clean u ultrahi야 vacuum environment is of gr않t importance for surce science studies. The current t비rd generation synchrotron light sources provide exceptionally high baliance and stability a and open up possibilities for experiments which would have been inconceivable only a short time ago.

• 한국정보통신학회논문지
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• 제10권9호
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• pp.1663-1670
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• 2006

펄스 전기증착법에 의해 단결정 Fe 박막을 n-Si(111) 기판위에 직접 성장시켰다. CV 분석 을 통해 $Fe^{2+}n-Si(111)$ 계면은 쇼트키 장벽 형성에 따른 다이오드 특성을 가진다는 사실을 알 수 있었다. 또한 인가 전압에 따른 전기용량의 변화를 보여주는 Mott-Schottky chottky(MS) 관계식을 이용하여 전해질 내에서 n-Si(111) 기판의 flat-band potential(EFB)을 조사하였으며, 0.1M $FeCl_2$ 전해질 내에서 EFB와 산화-환원 전위는 각각 -0.526V 과 -0.316V 임을 알 수 있었다. Fe/n-Si(111) 계면반응 시, Fe 증착 초기 단계에서의 핵 형성과 성장 운동학은 과도전류 특성을 이용하여 조사하였으며, 과도전류 특성을 통해 Fe 박막의 성장모드는 "instantaneous nucleation and 3-dimensional diffusion limited growth"임을 알 수 있었다. 주파수가 300Hz, 최대 전압이 1.4V인 펄스 전압을 이용하여 n-Si(111) 기판위에 Fe를 직접 전기 증착 시켰으며, 형 성 된 Fe 박막은 단결정 ${\alpha}-Fe$로 Si 기판위에 ${\alpha}-Fe(110)/Si(111)$의 격자 정합성을 가지고 성장하였음을 XRD 분석을 통해 확인하였다.