• Laser Solutions
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• v.12 no.1
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• pp.7-13
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• 2009

Engineering ceramics as sapphire are widely used in industry owing to their superior mechanical and corrosion properties. However, micromachining of sapphire is a considerable challenge due to its transparency. Recently, direct ablation of sapphire has been demonstrated with a visible laser pulse at sufficiently high laser intensity. In this work, the theoretical model for pulsed laser ablation of sapphire is suggested and numerical analysis is carried out using the model. Sapphire ablation begins with plasma generation by the laser interaction with surface defects, impurities and contaminations in the initial stage of machining. Subsequent absorption of the visible laser beam can be explained by three mechanisms: metalization of sapphire surface due to the EUV radiation from the hot plasma, increments of surface roughness and temperature-dependent absorption coefficient. Comparison of the computation results with experimental observation indicates that the proposed model of sapphire is reasonable.

• Journal of Welding and Joining
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• v.29 no.2
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• pp.88-93
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• 2011

This study produced hypereutectic Al-Si clad layer on 1050 Al alloy by a novel laser cladding method. Pure Si powder was mixed with organic binder to make fluid paste which could be screen-printed on the 1050 Al alloy plate. Pulsed Nd:YAG laser was irradiated on the Si paste layer to melt and alloy with Al substrate. Different laser power of 99 W, 179 W and 261 W, was used to see the difference of the microstructure, composition and hardness of the clad layers. When laser power of 179 W was used, the clad layer had overall Si content of 38wt% and composed of fine primary Si particles and fine eutectic phase. At laser power of 261 W, the clad layer had overall Si content of 24wt% and composed of mainly fine eutectic phase. Vickers hardness of HV176.7 and HV150.3 on the clad layer was obtained at laser power of 179 W and 261 W, respectively.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.523-527
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• 2013

Ti-based coatings following laser ablation were studied to compare degradation behaviors by thermomechanical stress. TiN, TiCN, and TiAlN coatings were degraded by a Nd:YAG pulsed laser with an increase in the laser pulses. A decrease in the hardness was identified as the pulses increased, and the hardness levels were in the order of TiAlN > TiCN > TiN. The TiN showed cracks on the surface, and cracks with pores formed along the cracks were observed in the TiCN. The dominant degradation behavior of the TiAlN was surface pore formation. EDS results revealed that diffusion of substrate atoms to the coating surface occurred in the TiN. Delamination occurred in the TiN and TiCN, while the TiAlN which has higher thermal stability than the TiN and TiCN maintained adhesion to the substrate. It was considered that the decrease in the hardness of the Ti-based hard coatings is attributed to surface cracking and the diffusion of substrate atoms.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.88-89
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• 2007

ZnO thin films were deposited on $Al_2O_3$ (alumina) substrates by pulsed laser deposition (PLD) using Nd:YAG laser with a wavelength of 355nm, at room temperature and oxygen partial pressure of 1, 10, 30, 50, 100, and 200m Torr. Furthermore, deposited ZnO thin films were post-annealed at 400, 550, $600^{\circ}C$. The effects of oxygen partial pressure and post-annealing temperature on structural properties of the deposited films have been investigated by means of X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It has been found that ZnO thin films exhibit c-axis orientation, exhibiting an increased foil width at half maximum (FWHM) value of (002) diffraction peak at 30m Torr oxygen partial pressure and higher post-annealing temperature ($700^{\circ}C$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.266-267
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• 2007

$Ba_{0.5}Sr_{0.5}TiO_3$(BST) films with different deposition temperatures were deposited on $Al_2O_3$ substrate by Nd:YAG Pulsed Laser Deposition(PLD). The deposition conditions to achieve high crystal structures and dielectric properties were optimized for both techniques. The structural characterization on the BST thin films was performed by X-Ray Diffraction(XRD) and Atomic Force Microscopy (AFM). Effects of post-deposition annealing of BST films were investigated. The best dielectric properties were obtained on $800^{\circ}C$ deposited BST film with post-deposition annealing at $1100^{\circ}C$ in flowing $O_2$ atmosphere for 2hours.

• Bulletin of the Korean Chemical Society
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• v.19 no.8
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• pp.830-835
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• 1998

The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.

• Progress in Superconductivity and Cryogenics
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• v.8 no.4
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• pp.15-18
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• 2006

REBCO coated conductors (RE: rare earth elements) have recently drawn great attention since they are known to possess stronger flux pinning centers in high magnetic fields compared with YBCO coated conductors. In this study, $GdBa_2Cu_3O_{7-d}(GdBCO)$ was selected to investigate the influence of the distance between target and substrate and substrate temperature on the superconducting properties of GdBCO films on the $SrTiO_3(100)$ substrate. Samples were fabricated by pulsed laser deposition (PLD) with a Nd:YAG laser (355nm). Under a given oxygen pressure of 800mTorr, we changed the distance between target and substrate from 5.5cm to 7.0cm and the substrate temperature from $750^{\circ}C\;to\;850^{\circ}C$. The crystallinity and texture of GdBCO films were analyzed by X-ray diffraction (XRD), and the surface morphology was observed by the scanning electron microscopy (SEM). Tc and Jc values were measured by the four point probe method. High quality GdBCO films with Tc of 89.7K and Jc over $1MA/cm^2$ at 77 K in self field were successfully fabricated by optimizing processing parameters. The detailed processing conditions, microstructure and superconducting properties will be presented for a discussion.

• Nuclear Engineering and Technology
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• v.55 no.11
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• pp.4159-4166
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• 2023

Laser decontamination of radioactive surfaces is an innovative technology. Our contribution to improving this technology includes studies on laser beam decontamination with a pulsed laser of an average power of 150 W, equipped with a hand guided working head. Our investigations are focused on metallic surfaces typical in nuclear power plants, such as stainless steel, bright and rusted mild steel, galvanized steel, and painted steel. As typical nuclides of contaminated surfaces we chose Co-60 and Cs-137, the most frequently occurring nuclides in many nuclear plant components; Sr-85 as a representative of Sr-90, the potentially most harmful fission nuclide; and Am-241 as a representative of the minor alpha-radiation emitting actinides. Here, we present our results of decontamination and recovery ratios. Decontamination ratios of 90-100% were achieved on different surfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.247.1-247.1
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• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.197.2-197.2
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• 2015

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, the ZnTe:O/CdS/ZnO structure was fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 4.5 J/cm2. The base pressure of the chamber was kept at a pressure of approximately $4{\times}10-7Torr$. ZnO thin film with thickness of 100 nm was grown on to ITO/glass, and then CdS and ZnTe:O thin film were grown on ZnO thin film. Thickness of CdS and ZnTe:O were 50 nm and 500 nm, respectively. During deposition of ZnTe:O films, O2 gas was introduced from 1 to 20 mTorr. For fabricating ZnTe:O/CdS/ZnO solar cells, Au metal was deposited on the ITO film and ZnTe:O by thermal evaporation method. From the fabricated ZnTe:O/CdS/ZnO solar cell, current-voltage characteristics was measured by using HP 4156-a semiconductor parameter analyzer. Finally, solar cell performance was measured using an Air Mass 1.5 Global (AM 1.5 G) solar simulator with an irradiation intensity of 100 mW cm-2.