• 제목/요약/키워드: Pulsed Laser deposition

검색결과 639건 처리시간 0.027초

다이아몬드상 카본박막의 펄스레이저 증착법 연구 (A Study on the Pulsed Laser Deposition of Diamond like Carbon Thin Films)

  • 심경석;이상렬
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권6호
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    • pp.403-409
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    • 1999
  • We fabricated diamond like carbon (DLC) thin films using pulsed laser deposition (PLD) method. Among many deposition parameters, the effects of the deposition temperature and the laser energy density were investigated. Structural properties of the films were studied by Raman spectroscopy. The surface morphologies and cross-section imagies of the films were investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM) respctively. DLC thin films fabricated at $12 J/cm^2$ of a laser energy density and $300^{\circ}C$ of a deposition temperature showed the best quality.

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펄스레이저 증착법의 레이저 파장변환에 의한 실리콘 나노결정의 발광 특성 연구 (Study on the Luminescence of Si Nanocrystallites on Si Substrate fabricated by Changing the Wavelength of Pulsed Laser Deposition)

  • 김종훈;전경아;최진백;이상렬
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권4호
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    • pp.169-172
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    • 2003
  • Silicon nanocrystalline thin films on p-type (100) silicon substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532, and 1064 nm. The base vacuum in the chamber was down to $10^-6$ Torr and the laser energy densities were 1.0~3.0 J/$\textrm{cm}^2$ After deposition, silicon nanocrystalline thin films have been annealed at nitrogen gas. Strong Blue and green luminescence from silicon nanocrystalline thin films have been observed at room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355 to 1064 nm.

레이저 층착법에 의해 형성된 $Gd_{2}O_{3}$박막의 구조와 광학적 특성 (Structure and optical Properties of $Gd_{2}O_{3}$ thin films on glass Prepared by Pulsed Laser Deposition)

  • 이경철;이천;조신호;박중철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.362-364
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    • 2001
  • The pulsed laser deposition(PLD) technology was used for the deposition of phosphor substance, Gd$_2$O$_3$on commercial glass. An Nd:YAG laser was employed for the deposition (wavelength 266nm, energy up to 100mJ/pu1se, pulse duration is 5ns and repetition rate 10 Hz). With respect to films grown by conventional PLD, this study exhibited the condition at normal temperature. Experiments were done without any reactive gas at a pressure of 10$^{-5}$ ~10$^{-6}$ Torr using second harmonic(λ=532 nm) and fourth harmonic(λ=266 nm) Nd:YAG laser. Analyses of the deposited material grown are performed by EDX, AFM, SEM, PL meseurements.

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Pulsed laser deposition 방법으로 증착된 $(Bi,Ce)_4Ti_3O_{12}$ 박막의 강유전특성 분석 (Characteristics of ferroelectric properties of $(Bi,Ce)_4Ti_3O_{12}$ thin films deposited by pulsed laser deposition)

  • 오영남;성낙진;윤순길
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.37-37
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    • 2003
  • Ferroelectric random acess memories (FeRAMs) 재료로 주목받고 있는 강유전 물질은 이미 여러 해 전부터 많은 물질들에 대해 연구가 진행되어 왔다. 그 중 낮은 공정 온도를 가지며 큰 remanent polarization 값을 갖는 lead zirconium titanate (PZT) 박막에 대해 많은 연구가 진행되고 있다. 하지만 Pt 기판위에 증착된 PZT 박막은 높은 피로 현상을 보이는 문제가 있다. 최근 Pulsed laser deposition이나 metal-organic vapor phase epitaxy (MOVPE) 등의 방법에 의해 epitaxial substituted-$Bi_4Ti_3O_{12}$ (La, Nd) 박막에 대해 보고가 되고 있다. 본 연구에서는 높은 remanent polarization 값을 갖는 $(Bi,Ce)_4Ti_3O_{12}$ (BCT) 박막을 pulsed laser deposition 방법을 사용하여 증착하였다. 또한 Bismuth의 양을 변화시켜 Bismuth의 양에 따른 remanent polarization의 변화를 확인하여 보았다. 사용된 기판은 Pt/$TiO_2$/$SiO_2$/Si 기판을 사용하였다.

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Pulsed Laser Deposition 방법으로 증착된 ZnSnO3 압전 박막의 성장과 특성 평가 (Fabrication and Properties of ZnSnO3 Piezoelectric Films Deposited by a Pulsed Laser Deposition)

  • 박병주;윤순길
    • 한국전기전자재료학회논문지
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    • 제27권1호
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    • pp.18-21
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    • 2014
  • Because the Pb-based piezoelectric materials showed problems such as an environmental pollution. lead-free $O_3$ materials were studied in the present study. The $O_3$ thin films were deposited at $640^{\circ}C$ on $Pt/Ti/SiO_2$ substrate by pulsed laser deposition (PLD) and were annealed for 5 min at $750^{\circ}C$ using rapid thermal annealing (RTA) in nitrogen atmosphere. Samples annealed at $750^{\circ}C$ showed a smooth morphology and an improvement of the dielectric and leakage properties, as compared with as-grown samples. However, electrical properties of the $O_3$ thin films obtained in the present study should be improved for piezoelectric applications.

PLD를 이용한 ZnO 박막의 구조적 특성과 표면의 형태에 관한 연구 (The Structural Characteristic and Surface Morphology of ZnO Thin Films by Pulsed Laser Deposition)

  • 김재홍;이경철;이천
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권6호
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    • pp.231-234
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    • 2003
  • ZnO thin films on (100) p-type silicon substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiments were performed for oxygen gas flow rate of 100~700 sccm and substrate temperatures in the range of 200~$500^{\circ}C$. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction(XRD), scanning electron microscopy(SEM) and atomic force microscopy(AFM).

Characteristics of ZnO Thin Films Grown on p-type Si and Sapphire Substrate by Pulsed Laser Deposition

  • Lee, K. C.;Lee, Cheon
    • KIEE International Transactions on Electrophysics and Applications
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    • 제3C권6호
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    • pp.241-245
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    • 2003
  • ZnO thin films on (l00) p-type Si and sapphire substrates have been deposited by a pulsed laser deposition technique using an Nd:YAG laser with a wavelength of 266 nm. The influence of the deposition parameters such as oxygen pressure, substrate temperature and laser energy density on the properties of the grown films was studied. The experiments were performed for substrate temperatures in the range of 200∼50$0^{\circ}C$ and oxygen pressure in the range of 100∼700 sccm. All of the films grown in this experiment show strong c-axis orientation with (002) textured ZnO peak. With increasing substrate temperature, the FWHM (full width at half maximum) and surface roughness were decreased. In the case of using sapphire substrate, the intensity of PL spectra increased with increasing ambient oxygen flow rate. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM).