• Title/Summary/Keyword: Pulse-reverse

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Effects of Electrostatic Discharge Stress on Current-Voltage and Reverse Recovery Time of Fast Power Diode

  • Bouangeune, Daoheung;Choi, Sang-Sik;Cho, Deok-Ho;Shim, Kyu-Hwan;Chang, Sung-Yong;Leem, See-Jong;Choi, Chel-Jong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.4
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    • pp.495-502
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    • 2014
  • Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

A Magnetic Stimulator Adopting a Low-Frequency Fly-Back Switching Circuit (저주파 플라이백 스위칭회로를 이용한 고성능 자기자극기)

  • Yi, Jeong-Han;Kim, Hyung-Sik;Hur, Moon-Chang;Kim, Jung-Hoe
    • Journal of Biomedical Engineering Research
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    • v.27 no.6
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    • pp.343-350
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    • 2006
  • Medical magnetic stimulator generates strong magnetic field pulses. Clinical applications of the magnetic pulse are the stimulation of nervous system and the contraction of muscle. The unique source of the strong magnetic pulse is a capacitor-inductor resonator and this inductor generates a strong sinusoidal magnetic pulse by discharging the capacitor with high initial voltage. Continuous muscle contraction needs sequential generation of the magnetic pulses. However, to keep the magnitude of sequential pulses identical, an expensive high-voltage power supply have to support voltage drop of the capacitor between the pulses. A protection circuit between the supply and the resonator is necessary to protect the supply from reverse current caused by capacitor voltage reversal. In this paper, a new circuit structure of the magnetic stimulator adopting a low-frequency fly-back switching is proposed. The new circuit supports sequential pulse generation and allows the reverse current without damage. Performance of the new circuit is examined and a low-cost magnetic stimulator for urinary incontinence therapy is being developed using the presented method.

Fault-Tolerant Strategy to Control a Reverse Matrix Converter for Open-Switch Faults in the Rectifier Stage

  • Lee, Eunsil;Lee, Kyo-Beum
    • Journal of Power Electronics
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    • v.16 no.1
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    • pp.57-65
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    • 2016
  • Reverse matrix converters, which can step up voltages, are suitable for applications with source voltages that are lower than load voltages, such as generator systems. Reverse matrix converter topologies are advantageous because they do not require additional components to conventional matrix converters. In this paper, a detection method and a post-fault modulation strategy to operate a converter as close as possible to its desired normal operation under the open-switch fault condition in the rectifier stage are proposed. An open-switch fault in the rectifier stage of a reverse matrix converter causes current distortions and voltage ripples in the system. Therefore, fault-tolerant control for open-switch faults is required to improve the reliability of a system. The proposed strategy determines the appropriate switching stages from among the remaining healthy switches of the converter. This is done based on reference currents or voltages. The performance of the proposed strategy is experimentally verified.

Effect of Pulse and Pulse-Reverse Current on Surface Morphology and Resistivity of Electrodeposited Copper (정펄스 및 역펄스 방법을 이용하여 구리 전해도금 시 전착층의 표면 형상과 고유저항에 미치는 효과)

  • Woo, Tae-Gyu;Park, Il-Song;Seol, Kyeong-Won
    • Korean Journal of Materials Research
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    • v.17 no.1
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    • pp.56-59
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    • 2007
  • Recently, requirement for the ultra thin copper foil increases with smaller and miniaturized electronic components. In this study, we evaluated the surface morphology, crystal phase ana surface roughness of the copper film electrodeposited by pulse method without using additives. Homogeneous and dense copper crystals were formed on the titanium substrate, and the optimum condition was 25% duty cycle. Moreover, the surface roughness(Ra), $0.295{\mu}m$, is the smallest value in this condition. It is thought that this copper foil is good for electromigration inhibition due to the preferential crystal growth of Cu (111)

Formation of Hollow Cu Through-Vias for MEMS Packages (MEMS 패키지용 Hollow Cu 관통비아의 형성공정)

  • Choi, J.Y.;Kim, M.Y.;Moon, J.T.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.4
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    • pp.49-53
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    • 2009
  • In order to investigate the formation behavior of hollow Cu via for MEMS packaging, we observed the microstructure of the Cu vias and measured the average thickness and the thickness deviation with variations of pulse-reverse pulse current density and electrodeposition time. With electrodeposition for 3 hours at the pulse and reverse pulse current densities of $-5\;mA/cm^2$ and $15\;mA/cm^2$, the average thickness and the thickness deviation of the Cu vias were $5\;{\mu}m$ and $0.63\;{\mu}m$, respectively. With increasing the electrodeposition time to 6 hours, it was possible to form the Cu vias, of which the average thickness and thickness variation of the Cu vias were $10\;{\mu}m$ and $1\;{\mu}m$, respectively. With increasing the pulse and reverse pulse current densities to $-10\;mA/cm^2$ and $30\;mA/cm^2$, Cu vias of uniform thickness could not be formed due to the faster increase of the thickness deviation than that of the average thickness with increasing the electrodeposition time.

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Characteristics of Die Sinking Electical Discharge Machining for Pulse Duration (펄스지속시간에 따른 형상방전가공 특성)

  • 우정윤;왕덕현;윤존도
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.04a
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    • pp.827-831
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    • 1997
  • Conductive veramic matrix composite(CMC) workpiece of TiC 33%/Al /sab 2/O /sab 3/ 66% Y /sab 2/ O /sab 3/ was machined by die sinking electrical discharge machining(EDM) according to different pulse duration and suty factor for reverse polarity of electrode. Material removal rate(MRR) was examined by process under various operating conditions. The surface morphology was evaluated by surface roughness values and scanning electron microscopy(SEM) research. The more MRR was obtained according to increase pulse duration and duty factor. Also the maximum surface roughness(Rmax) of EDMed surface was slightly changed with increased pulse duration and duty factor. The SEM photographs of EDMed surface showed wide recast wide recast distribution region of melting materials in purse duration 0.130(ms) than 0.048(ms).

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A Stable Threshold Linear Current Pulse Discriminator (안정한계 선형전류펄스변별기)

  • 김병찬
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.5 no.2
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    • pp.8-14
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    • 1968
  • A linear current-pulse discriminator consisting: of a transistor monostable multivibrator and a Si tunnel diode is described. The input currant pulse range is about 50$\mu$A~5.23mA. The measured maximum linearity deviation is $\pm$0.75% in the input current pulse range mentioned above. The pulse resolving ability of the discriminator measured depends upon the bias current through the T, D. ; and, under the reverse bias current of 3mA, the resolving time is 2rs if allow the excess pulse amplitude of 5%. The threshold stability of the discriminator depends mainly upon the stability of the peak current Ip of the T. D. ; and, under the ambient temperature variation from $0^{\circ}C$ to 5$0^{\circ}C$, no bigger threshold variation than the maximum linearity deviation, i. e. $\pm$ 0.75%, was observed.

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A New ZCS PWM Boost Converter with operating Dual Converter (Dual 컨버터로 동작하는 새로운 ZCS PWM Boost Converter)

  • Kim Tea-Woo;Chin Gi-Ho;Kim Hack-Sung
    • Proceedings of the KIPE Conference
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    • 2002.07a
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    • pp.525-528
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    • 2002
  • A Novel Zero Current Switching(ZCS) Pulse Width Modulation(PWM) boost converter for reducing two rectifiers reverse recovery related losses Is proposed. The switches of the proposed converter are operating to work alternatively turn-on and turn-off with soft switching(ZVS, ZCS) condition. The reverse recovery related switching losses and EMI problems of the proposed converter eliminates the reverse recovery current of the freewheeling diode(D, Dl) by adding the resonant inductor Lr, in series with the switch S2. The voltage and current stresses of the components are similar to those in its conventional hard switching counterpats. As mentioned above, the characteristics are verified through experimental results.

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Current Source Type Pulse Generator with Improved Output Voltage Waveform for High Voltage Capacitively Coupled Plasma System (고전압 용량성 결합 플라즈마 시스템의 개선된 전압 파형 출력을 위한 펄스 전류 발생장치 회로)

  • Chae, Beomseok;Min, Juhwa;Suh, Yongsug;Kim, Hyunbae
    • The Transactions of the Korean Institute of Power Electronics
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    • v.24 no.3
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    • pp.153-160
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    • 2019
  • This study proposes a current source-type pulse generator to improve output voltage and current waveforms under a capacitively coupled plasma (CCP) system. The proposed circuit comprises two parallel-connected current source-type converters. These converters can satisfy the required output waveforms of plasma processing. The parallel-connected converters operate without reverse current fault by applying a time-delay control technique. Conventional voltage source converters based on pulse power supply exhibit drawbacks in short-circuit current, and problems occur when they are applied to a CCP system. The proposed pulse power supply based on a current source converter fundamentally solves the short-circuit current problem. Therefore, this topology can improve the voltage and current accuracy of a CCP system.