• Title/Summary/Keyword: Pulse Repetition Rate

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Structure and optical Properties of $Gd_{2}O_{3}$ thin films on glass Prepared by Pulsed Laser Deposition (레이저 층착법에 의해 형성된 $Gd_{2}O_{3}$박막의 구조와 광학적 특성)

  • Lee, Kyoung-Cheol;Lee, Cheon;Cho, S.;Park, J.C.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.362-364
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    • 2001
  • The pulsed laser deposition(PLD) technology was used for the deposition of phosphor substance, Gd$_2$O$_3$on commercial glass. An Nd:YAG laser was employed for the deposition (wavelength 266nm, energy up to 100mJ/pu1se, pulse duration is 5ns and repetition rate 10 Hz). With respect to films grown by conventional PLD, this study exhibited the condition at normal temperature. Experiments were done without any reactive gas at a pressure of 10$^{-5}$ ~10$^{-6}$ Torr using second harmonic(λ=532 nm) and fourth harmonic(λ=266 nm) Nd:YAG laser. Analyses of the deposited material grown are performed by EDX, AFM, SEM, PL meseurements.

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3D Packaging Technology Using Femto Laser (팸토초 레이저를 이용한 3차원 패키징 기술)

  • Kim, Ju-Seok;Sin, Yeong-Ui;Kim, Jong-Min;Han, Seong-Won
    • Proceedings of the KWS Conference
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    • 2006.10a
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    • pp.190-192
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    • 2006
  • The 3-dimensional(3D) chip stacking technology is one of the leading technologies to realize a high density and high performance system in package(SIP). It could be found that it is the advanced process of through-hole via formation with the minimum damaged on the Si-wafer. Laser ablation is very effective method to penetrate through hole on the Si-wafer because it has the advantage that formed under $100{\mu}m$ diameter through-hole via without using a mask. In this paper, we studied the optimum method for a formation of through-hole via using femto-second laser heat sources. Furthermore, the processing parameters of the specimens were several conditions such as power of output, pulse repetition rate as well as irradiation method and time. And also the through-hole via form could be investigated and analyzed by microscope and analyzer.

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Development and Operation Characteristics of XeCl Excimer Laser (방전여기 XeCl 엑시머레이저의 제작 및 동작특성)

  • Jin, Yun-Sik;Lee, Hong-Sik;Kim, Hee-Je;Rho, Young-Soo;Kim, Youn-Taeg
    • Proceedings of the KIEE Conference
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    • 1993.11a
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    • pp.268-271
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    • 1993
  • Discharge pumped high power excimer laser is a very useful light source of ultraviolet region. In this paper. the design and operation characteristics of UV pre-ionized discharge pumped XeCl laser are discussed. Maximum output power of 890mJ at the efficiency of 1.4% was achieved with 35kV charging voltage, 3.4atm of total pressure and 10pps of pulse repetition rate. Optimum HCl pressure is considered to be between 2.5 and 3.5torr.

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Mode Locking of AlGaAs Semicondctor Laser Traveling Wave Amplifiers (AlGaAs 진행파 반도체 레이저 광증폭기의 모드록킹)

  • 이창희;강승구;정기웅;임시종;유태경
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.1
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    • pp.119-128
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    • 1995
  • We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.

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Detection and Location of Partial Discharge in Transformers (변압기내 부분방전 탐지 및 위치검출)

  • 곽희노;김재철;황선주;권태원;윤용범
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.6 no.4
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    • pp.53-59
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    • 1992
  • This paper describes an instrument for the detection and geometric location of partial discharge (PD) source in transformers. This instrument measures electric current pulses and ultrasonic pulses simultaneously, counts the number of electrical pulses and determines the geometric location of PD in transformers. It was found that there is a relationship between partial discharge magnitude and pulse repetition rate when the applied test voltage and oil temperature were varied. Through the laboratory test using model transformer, it was clarified that this detector could be used for detecting and locating PD in the transformer.

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Modeling of Pulsed Laser Heating of Tissue: Implications or Skin Resurfacing (Pulsed Laser를 이용한 생체조직 가열을 위한 모델링 : Skin Resurfacing을 위한 연관성)

  • Kwon, Y.H.;Rastegar, S.
    • Proceedings of the KOSOMBE Conference
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    • v.1997 no.11
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    • pp.375-379
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    • 1997
  • Pulsed Er:YAG and $CO_2$ lasers induced temperature rise of tissue are studied using axisymmetric, two-dimensional, and transient Pennes' bio-heat equation or the implications of skin resurfacing. Model results indicate that Er:YAG laser induced temperature has much higher but more shallow distribution in tissue than that of the $CO_2$ laser because of its higher absorption coefficient. The increase of repetition rate does not affect the temperature rise too much because these laser modalities have much shorter heat diffusion time than the temporal length of each off-pulse. This model works as a tool to understand the photothermal effect in the laser-tissue interaction.

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A PRELIMINARY STUDY OF PULSED LASER HEATING OF TISSUE FOR THE IMPLICATIONS OF SKIN RESURFACING

  • Kwon,Yong-Hoon;Kim, You-Young
    • Journal of Photoscience
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    • v.5 no.1
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    • pp.39-43
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    • 1998
  • Pulsed Er: YAG and CO$_2$ lasers induced temperature rise of tissue is studied using axisymmetric, two-dimensional, and transient Pennes bio-heat equation for elucidating the implications of skin resurfacing. Modeling indicates that Er:YAG laser induced temperature has much higher but more shallow distribution in tissue than that of the CO$_2$ laser because of much higher absorption coefficient. The increase of repetition rate does not much affect on temperature rise because these laser modalities have much shorter heat diffusion time than the temporal length of each off-pulse. This model works as a tool to understand the photothermal effect in the laser-tissue interaction.

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Self-Oscillating, Third-Harmonic Mode-Locked l-GHz Nd:YLF Laser

  • Yu, Tae-Jun;Sung, Jai-Hee;Nam, Chang-Hee
    • Journal of the Optical Society of Korea
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    • v.3 no.2
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    • pp.51-54
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    • 1999
  • A Nd:YLF laser has been actively mode-locked at the third-order harmonic cavity frequency using a lithium niobate phase modulator. Self-oscillating pulses of 14 ps duration, 1 GHz repetition rate, and 10mV average power at 1053 nm wavelength have been obtained. A 1GHz rf signal to drive a phase modulator was obtained by using 1GHz pulse train without rf synthesizer as a driver of an active mode locker.

High repetition rate optical pulse generation from an actively mode-locked fiber rin laser

  • Jeon, Min-Yong;Lee, Hak-Kyu;Ahn, Joon-Tae;Lim, Dong-Sung;Kim, Ho-Young;Kim, Kyong-Hon;Lee, El-Hang
    • Journal of the Optical Society of Korea
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    • v.2 no.1
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    • pp.9-12
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    • 1998
  • Rational harmonic mode-locking of an Er-doped fiber ring laser has been successfully demonstrated up to the 16-th harmonic, of the RF frequency applied to the electro-optic modulator. This is the highest harmonic reported so far to our knowledge.

Analysis and Design of The Thyratron Controller (사이라트론 구동용 제어회로 설계에 관한 연구)

  • Kim, Han-Gee;Jeong, Tae-Won;Cha, Beong-Heon
    • Proceedings of the KIEE Conference
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    • 2000.11b
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    • pp.348-351
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    • 2000
  • There have been significant advances in thyratron performance in recent years. these advanced waveforms have increased the complexity and cost of drive circuits. Thyratrons can reliably switch anode voltages up to 40kV and conduct peak currents up to 10kA or more. So stable thyratron drivers are essential for reliable high voltage pulse modulators. In order to operate thyratron well, thyratron driver need high repetition rate, fast rising time and low jitter. In this paper, used power MOSFET/transformer combinations. Designed thyratron driver is satisfied requirements and experimental results are presented to confirm.

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