• Title/Summary/Keyword: PtSi CSD

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NEAR-INFRARED WIDE-FIELD IMAGING CAMERA WITH PtSi 1040 $\times$ 1040 CSD

  • ITOH NOBUNARI;YANAGISAWA KENSHI;ICHIKAWA TAKASHI
    • Journal of The Korean Astronomical Society
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    • v.29 no.spc1
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    • pp.379-380
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    • 1996
  • We have constructed a near-infrared imaging camera which is attached to the prime focus of 105cm Schmidt telescope at Kiso Observatory. The camera is equipped with a 1040$\times$1040 PtSi CSD array developed by Mitsubishi Electric Co. The combination of Kiso Schmidt and the array gives a wide field of view of 18.4'$\times$18.4' with a reasonable spatial resolution of 1.06' /pixel. The system performances of the camera have been evaluated through laboratory and observational tests. Low noise, good cosmetics(no defect pixels), and good stability of the camera system show an excellent performance for astronomical use.

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Fabrication of $La_2T_2O_7$ Thin Film by Chemical Solution Deposition (CSD 방법을 이용한 $La_2T_2O_7$ 박막제조)

  • 장승우;우동찬;이희영;정우식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.339-342
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    • 1998
  • Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.

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Chemical Solution Deposition 방법으로 증착된 $Bi_{0.8}A_{0.2}FeO_3$ (A=Pb, Co) 박막의 자기적 특성에 대한 연구

  • Cha, Jeong-Ok;An, Jeong-Seon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.245-245
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    • 2011
  • $BiFeO_3$ (BFO)박막에 전위금속 Pb와 Co를 각각 치환환 박막을 chemical solution deposition 방법으로 Pt/Ti/SiO2/Si(100) 기판위에 증착하였다. Bi 자리에 Pb와 Co를 20 at.% 치환하였으며, 치환된 $Bi_{0.8}Pb_{0.2}FeO_3$ (BPFO), $Bi_{0.8}Co_{0.2}FeO_3$ (BCFO) 박막의 구조적, 자기적 특성 변화를 BFO 박막과 비교하여 조사하였다. XRD 패턴을 분석한 결과 BPFO, BCFO 박막들은 모두 rhombohedrally distorted perovskite 구조였으며 불순물인 pyrochlore 상이 약하게 관측되었다. 치환이 이루어진 BPFO, BCFO 박막들의 자기 이력곡선은 안정된 포화곡선을 나타냈으며 BFO의 포화값(5 emu/$cm^3$)에 비해 크게 증가된 55 emu/$cm^3$, 35 emu/$cm^3$의 값을 나타냈다. 또한 보자력장(coercive field, Hc)값도 BFO의 500 Oe보다 크게 증가된 1,200 Oe, 800 Oe의 값을 보였다.

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Ferroelectric, Leakage Current Properties of BiFeO3/Pb(Zr0.52Ti0.48)O3 Multilayer Thin Films Prepared by Chemical Solution Deposition (Chemical Solution Deposition 방법을 이용한 BiFeO3/Pb(Zr0.52Ti0.48)O3 다층박막의 전기적 특성에 대한 연구)

  • Cha, J.O.;Ahn, J.S.;Lee, K.B.
    • Journal of the Korean Vacuum Society
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    • v.19 no.1
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    • pp.52-57
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    • 2010
  • $BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.