• Restorative Dentistry and Endodontics
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• 제42권3호
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• pp.216-223
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• 2017

Objectives: The aim of this study was to compare the mechanical properties of various nickel-titanium (NiTi) files with similar tapers and cross-sectional areas depending on whether they were surface-treated. Materials and Methods: Three NiTi file systems with a similar convex triangular cross-section and the same ISO #25 tip size were selected for this study: G6 (G6), ProTaper Universal (PTU), and Dia-PT (DPT). To test torsional resistance, 5 mm of the straightened file's tip was fixed between polycarbonate blocks (n = 15/group) and continuous clockwise rotation until fracture was conducted using a customized device. To evaluate cyclic fatigue resistance, files were rotated in an artificial curved canal until fracture in a dynamic mode (n = 15/group). The torsional data were analyzed using 1-way analysis of variance and the Tukey post-hoc comparison test, while the cyclic fatigue data were analyzed using the Mann-Whitney U test at a significance level of 95%. Results: PTU showed significantly greater toughness, followed by DPT and G6 (p < 0.05). G6 showed the lowest resistance in ultimate torsional strength, while it showed a higher fracture angle than the other files (p < 0.05). In the cyclic fatigue test, DPT showed a significantly higher number of cycles to failure than PTU or G6 (p < 0.05). Conclusions: Within the limitations of this study, it can be concluded that the torsional resistance of NiTi files was affected by the cross-sectional area, while the cyclic fatigue resistance of NiTi files was influenced by the surface treatment.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.959-962
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• 2001

In this study, the piezoelectric and dielectric properties and Temperature stability of resonant frequency with MnO$_2$doped 0.36Pb(Sc$_{1}$2/Nb$_{1}$2/)O$_3$- 0.25Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-0.39PbTiO$_3$(hereafter PSNNT) were investigated. The tetagonality of crystal structure was developed with increasing MnO$_2$additive content. With increasing MnO$_2$additive content, the electromechanical coupling factor and quality factor were increased. Electromechanical coupling k$_{p}$ and quality factor Q$_{m}$ at MnO$_2$doped with 2.0mol% were showed highest value of 55.6% and 252. In the case of specimen for MnO$_2$doped with 2mol%, temperature dependance of resonant frequency had a good properties.ies.

• 한국수소및신에너지학회논문집
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• 제15권2호
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• pp.152-158
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• 2004

Hydrogen has been considered as an important and essential future energy source. But the storage of the hydrogen is a difficult problem and many studies were focused on this matter. However, the MTH-system (methylcyclohexane, toluene, hydrogen) was proposed for storage of hydrogen by Taube et al. and that is the reaction of hydrogen with toluene to give methylcyclohexane. One toluene molecule can store six hydrogen atoms to form methylcyclohexane. In this form the hydrogen can be easily stored in liquid organic hydrides and transported at ambient pressure in tanks. Hence, this study is focused on the catalytic dehydrogenation of methylcyclohexane. Since supported platinum and nickel were employed as catalysts in literature, in this study, porous Pt and Ni were prepared and tested for the dehydrogenation reaction. When the porous Pt catalyst was applied to the dehydrogenation it showed higher activity in the reaction and higher selectivity to toluene. Specially at higher pressure, it showed almost 100 % conversion and 100 % selectivity and hence porous platinum could be considered as best for the given reaction.

• 한국대기환경학회지
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• 제15권3호
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• pp.249-255
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• 1999

We sdudied effect of additives on catalytic activity in thermal catalytic de-NOx process which was composed of thermal reduction, catalytic reduction and catalytic oxidation stage. Pd-Pt/${\gamma}$-$Al_2O_3$ catalysts with the addition of transition metals(Co, Cu, Fe, Ni, W, Zn, Zr) and rare earth metals(Ce, Sr) were prepared by the conventional washcoating method. Those catalysts were characterized by CO pulse chemisorption, ICP, $N_2$ adsorption, SEM and XRD. The effect of catalyst additives on NOx removal for diesel emission was studied in thermal catalytic de-NOx process at reduction temperature(350~50$0^{\circ}C$), space velocity(5,000~20,000 $hr^{-1}$) and the engine load(0~120kW). The concentraton of CO, $CO_2$, NO and $NO_2$ in the exhaust gas increased with the engine load. On the other hand the concentration of $O_2$ decreased. The de-NOx activityof all prepared catalysts increased with respect to high CO and low $O_2$ level in the thermal reduction stage of the process. Insertion of Ce to Pt-Pd/${\gamma}$-$Al_2O_3$ catalyst showed the best activity of all the catalysts under these experimental conditions. De-NOx catalysts are effective to remove CO in addition to NOx in the catalytic reduction stage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• 에너지공학
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• 제8권1호
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• pp.34-47
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• 1999

본 연구에서는 촉매상에서 메탄의 산화시 발생되는 반응열을 이용하고 반응생성물과 미반응 메탄과의 개질반응에 의해 합성가스의 수율을 증대시키기 위하여 연소촉매와 개질촉매를 연속적으로 배치한 hybrid 촉매상에서 개질촉매에 따른 메탄의 부분산화반응의 반응 특성과 합성가스 수율에 미치는 영향을 관찰하였다. 메탄의 산화를 위해서 Pt-Rh/cordierite 촉매를 사용하였으며, 개질촉매로는 상업용 개질촉매인 R67, ICI46-1, 수성가스 전환반응촉매인 LX821 촉매와 6 wt% Ni/cordierite 촉매를 사용하였다. 실험결과 연소촉매와 개질촉매를 연속적으로 사용한 경우 메탄의 산화 과정에서 생성된 CO2 및 H2O가 미반응 메탄과의 개질반응 촉진으로 인하여 합성가스이 수율이 증가됨을 확인할 수 있었다. 이때 생성되는 합성가스의 H2/CO 몰비는 온도에 따라 감소하는 것으로 나타났으며, 80$0^{\circ}C$에서 촉매에 따라 2.2~2.8의 값을 가짐을 알 수 있었다. 개질촉매로 R67 및 Ni/cordierite 촉매를 사용하였을 경우 가장 높은 합성가스의 수율을 얻을 수 있었으며, 연소촉매와 개질촉매의 질량비는 1:1~1:2에서 가장 높은 수율의 합성가스를 얻을 수 있었다. 메탄과 산소의 몰비가 2:2에서 메탄의 전환율과 수소 수율이 가장 높게 나타났으며 메탄의 몰비 증가에 따라 감소되는 경향을 보였다.

• 센서학회지
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• 제17권3호
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• pp.183-187
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• 2008

A sub-ppm level MEMS gas sensor that can be used for the detection of formaldehyde (HCHO) is presented. It is realized by using a zinc oxide (ZnO) thin-film material with a Ni-seed layer as a sensing material and by bulk micromachining technology. To enhance sensitivity of the MEMS gas sensor with Ni-seed layer was embedded with ZnO sensing material and sensing electrodes. As experimental results, the changed sensor resistance ratio for HCHO gas was 9.65 % for 10 ppb, 18.06 % for 100 ppb, and 35.7 % for 1 ppm, respectively. In addition, the minimum detection level of the fabricated MEMS gas sensor was 10 ppb for the HCHO gas. And the measured output voltage was about 0.94 V for 10 ppb HCHO gas concentration. The noise level of the fabricated MEMS gas sensor was about 50 mV. The response and recovery times were 3 and 5 min, respectively. The consumption power of the Pt micro-heater under sensor testing was 184 mW and its operating temperature was $400^{\circ}C$.

• Journal of Magnetics
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• 제17권2호
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• pp.78-82
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• 2012

CoNiFe(CNF)/$BaTiO_3(BTO)$/CoNiFe(CNF) multilayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using pulsed laser deposition (PLD) system. We fabricated three different thin films of BTO, BTO/CNF and CNF/BTO/CNF for magneto-capacitor and studied their crystalline structure, surface and interface morphology, and magnetic and electrical properties. When three different structures of multilayered thin film were compared, magnetization of CNF/BTO/CNF thin films was decreased by magnetic and dielectric interaction. Also we confirmed that capacitance of CNF/BTO/CNF multilayered thin film was enhanced as being near tetragonal structure with increasing of c/a ratio because of atomic bonding at interface between BTO dielectric and CNF magnetic materials. Finally, we studied the change of the capacitance of CNF/BTO/CNF multilayered thin film with magnetic field for emergence of magnetocapacitance and suggested a possibility of enhanced capacitance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.114-114
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• 2000

III-nitride 게 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자뿐만 아니라 HBT, FET와 같은 전자소자로도 널리 응용되고 있다. 이와 같은 물질을 이용한 소자를 제작할 경우 낮은 저항의 ohmic contact은 필수적이다. p-GaN의 ohmic contact은 아직까지 많은 문제점을 내포하고 있다. 그 중의 하나는 높은 doping 농도(>1018cm-3)의 p-GaN 박막을 성장하기가 어렵다는 것이며, 또 하나는 낮은 접촉 비저항을 얻기 위해선 7.5eV 이상의 큰 재가 function을 지닌 금속을 선택해야 한다. 그러나 5.5eV 이상의 재가 function을 갖는 금속은 존재하지 않는다. 위와 같은 문제점들은 p-GaN의 접촉 비저항이 10-2$\Omega$cm2이상의 높은 값을 갖게 만들고 있으며 이에 대한 해결방안으로는 고온의 열처리를 통하여 p-GaN와 금속사이에서 화학적 반응을 일으킴으로써 표면근처에서 캐리어농도를 증가시키고, 캐리어 수송의 형태가 tunneling 형태로 일어날 수 있도록 하는 tunneling current mechaism을 이용하는 것이다. 이에 본 연구에서는 MOCVD로 성장된 p-GaN 박막을 Mg의 activation을 증가시키기 위해 N2 분위기에서 4분간 80$0^{\circ}C$에서 RTA로 annealing을 하였으며, ohmic 접촉을 위한 금속으로 높은 재가 function과 좋은 adhesion 그리고 낮은 자체저항을 가지고 있는 Ni/ZSi/Ni/Au를 ohmic metal로 하여 contact한 후에 $700^{\circ}C$에서 1분간 rapid thermal annealing (RTA) 처리를 했다. contact resistance를 계산하기 위해 circular-TLM method를 이용하여 I-V 특성을 조사하였고, interface interaction을 알아보기 위해 SEM과 EDX, 그리고 XRD로 분석하였다. 또한 추가적으로 Si 계열의 compound metal인 PdSi와 PtSi에 대한 I-V 특성도 조사하여 비교하여 보았다.