• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.276.2-276.2
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• 2016

Dye-sensitized solar cells (DSCs) are promising candidates for light-to-energy conversion devices due to their low-cost, easy fabrication and relative high conversion efficiency. An important component of DSCs is counter electrode (CE) collect electrons from external circuit and reduct I3- to I-. The conventional CEs are thermally decomposed Pt on fluorine-doped tin oxide (FTO) glass substrates, which have shown excellent performance and stability. However, Pt is not suitable in terms of cost effect. In this report, we demonstrated that nickel sulfide thin films by atomic layer deposition (ALD)-using Nickel(1-dimethylamino-2-methyl-2-butanolate)2 and hydrogen sulfide at low temperatures of $90-200^{\circ}C$-could be good CEs in DSCs. Notably, ALD allows the thin films to grow with good reproducibility, precise thickness control and excellent conformality at the angstrom or monolayer level. The nickel sulfide films were characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, hall measurements and cyclic voltammetry. The ALD grown nickel sulfide thin films showed high catalytic activity for the reduction of I3- to I- in DSC. The DSCs with the ALD-grown nickel sulfide thin films as CEs showed the solar cell efficiency of 7.12% which is comparable to that of the DSC with conventional Pt coated counter electrode (7.63%).

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.116-116
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• 2000

질화물 반도체는 LED, LD, Transistor, 그리고 Photodetector 등 광소자 및 전자소자를 실현할 수 있는 소재로써 최근에 각광 받고 있으며, 또한 국·내외적으로 연구가 활발히 진행되고 잇다. 질화물 발광 다이오드 제작에는 소자의 효율과 수명시간의 향상을 위하여 질화물 반도체와 금속과의 접합시 고 품질의 오믹 접합이 필수적이다. 특히 p-형 GaN의 경우에는 높은 정공 농도를 갖는 p-형 GaN를 얻기가 어렵고 GaN의 일함수에 비하여 높은 일함수를 갖는 금속이 없기 때문에 매우 낮은 접합 저항을 가지며 안정성이 매우 우수한 금 접합을 얻기가 어렵다고 알려져 있다. 또한, GaN 계열의 발광 다이오드는 일반적으로 표면 발광 다이오드 형태로 제작되기 때문에 p-형 GaN 층의 오믹 접촉으로 사용되는 금속의 전기적 특성뿐만 아니라 발광 다이오드의 활성층에서 발광되어 나오는 빛에 대한 투과도 또한 우수하여야 발광 다이오드의 효율이 우수해진다. 본 연구에서는 p-형 GaN층의 접합 금속으로 Pt(80nm)과 Ni(5nm)/Au(7nm)를 사용하여 InGaN/GaN 다중양자우물 구조의 발광 다이오드를 제작하여 전기적 특성 및 발광효율을 측정하였다. 그리고, Pt(80nm)과 p-형 GaN와의 접합시 온도 변화에 따른 전기적 특성을 TLM 방법으로 조사하고, 가시광선 영역에서의 빛에 대한 투과도를 UV/VIS spectrometer, X-ray reflectivity, 그리고 Atomic Force Microscopy 등을 이용하여 분석하였다.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.759-761
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• 1992

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3+MnO_2(0.18mol%)$, NiO(0.15mol%) temary compound ceramics won fabricated by the mixed-oxide method. Noise properties of the pyroelectric infrared sensor were investigated with particle size of the raw materials and gain size of the specimens. Particle size were decreased and sintered density, voltage resposivity were increased with increasing the ball-mill times. The specimen ball-milled for a 80[hr] showed a good pop-corn noise properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.12-19
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• 2001

In this study, the physical properties of the piezoelectric sounder with metal-piezoelectric ceramics were analyzed. The dielectric and piezoeletric properties of 0.5wt% MnO$_2$ and NiO doped 0.1Pb(Mg$\_$1/3/Nb$\_$2/3/)O$_3$-0.45PbTiO$_3$-0.45PbZrO$_3$ ceramics were investigated aiming at acoustic transducer applications. The acoustic characteristics of a thin circular disc-type with metal-piezoceramics have been investigated. Also, the acoustic characteristics for the geometrical form of case were investigated. The piezoelectric sounder with 200kHz resonant frequency and 20kHz bandwidth was designed by considering the sharp directivity and the sound pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.283-286
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• 2000

In this study, the acoustic transducer of a thin circular disc-type with PZT/Metal was manufactured. The piezoelectric transducer with 200kHz resonance frequency was designed by considering the sharp directivity and the sound pressure. The dielectric and piezoelectric properties of 0.5 weight percent $MnO_2$ and NiO doped $0.1Pb(Mg_{1/3}Nb_{2/3})O_3-0.45PbTiO_3-0.42PbZrO_3$ ceramics were investigated aiming at acoustic transducer applications. Also, the acoustic characteristics of a thin circular disc-type with metal-piezoceramics have been Investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.332-336
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• 2001

In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional Pt layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at $330^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.74-78
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• 1999

For a high efficient field emission display (FED), the specific vacuum conditions below 10-7 Torr should be required. However, because the FED has the geometrical restriction due to its micro size, the thin film getters can be proposed for chemical pumping as a way to reduce impurity gases in the panel. The thin film getters, developed by employing the coating of new materials such as NI or Pt on getter surface, can be used without any activation process and show the enhanced sorption characteristics. Especially, using the Zr (1${\mu}{\textrm}{m}$) thin film getters with the Pt surface layer, the significant gettering for various active gases could be achieved from 9$\times$10-5 Torr to 1$\times$10-6 Torr or below. this good sorption properties is mainly contributed to the surface coating layer which shows the catalytic effect for gas dissociation and protects the getter materials against oxidation.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.351-356
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• 1996

The quartemary system ceramics 0.5[xPb(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-(1-x)Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_{3}$]-0.5[yPbTiO$_{3}$-(1-y) PbZrO$_{3}$ for piezoelectric actuators were prepared bv the were added to the raw materials up to 5 mole. Sintering temperature was varied form 1000.deg. C to 1200.deg. C. Sintering characteristrics, dielectric and piezoelectric properties were then investigated. Piezoelectric properties of sample prepared by the molten salt method were improved compared to those prepared by the conventional method. Addition of PZN shifted morphotropic phase boundary to more Zr-rich composition and decreased the piezoelectric properties.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1030-1036
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• 1994

The ceramics in the system 0.5[Pb(Ni1/3Nb2/3)O3]-0.5[0.65PbTiO3-0.35PbZrO3] were prepared by conventional solid state reaction method, double calcined method (columbite precursor method) and flux method using NaCl-KCl. Amount of pyrochlore phase for the calcined powders, sintering charateristrics, dielectric and piezoelectric properties were then investigated. Sintering temperature was 1000~120$0^{\circ}C$ and in case of flux method, the amount of flux to oxide was 1 : 1 mole ratio. The dielectric and piezoelectric properties of ceramics prepared by double calcined method and flux method were found to be better than those by conventional method. It was also possible to lower sintering temperature and reduce the amount of pyrochlore phase either by double calcined method or flux method. But with increasing sintering temperature, the difference in characteristrics due to diffrent fabrication method gradually.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.204-205
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• 2004