• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.313-314
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• 2005

$PbTiO_3$ and PZT(52/48) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PT/PZT(52/40) heterolayered thick films were fabricated by the screen-printing method on Pt/$Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a amount of the PbO-$PbF_2$ flux. In the X-ray diffraction analysis, PZT(52/48) thick films showed a perovskite polycrystalline structure without a pyrochlore phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.139-142
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• 1998

PLZT thin films were fabricated with different Zr/Ti ratios by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Si substrate. This PLZT thin films of 5000${\AA}$. thickness were crystallized at 600$^{\circ}C$, 200 mTorr O$_2$ press. 2/55/45 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$\_$r/=1500, and dielectric loss was 0.O$_3$. At 2/70/30 PLZT thin film, Coercive field and remnant polarization was respectively 19[kV/cm], 8[${\mu}$C/$\textrm{cm}^2$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.186-187
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. Thickness of SBN thin films was about 250[nm] in 70/30 of $Ar/O_2$ ratio. The thickness and deposition rate of SBN thin films were increased with increase of RF power. The capacitance of SBN thin films were increased with the increase of deposition temperature.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.238-242
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• 2005

The Pt counter electrode of a dye-sensitized solar cell (DSSC) plays a role in helping redox reaction of iodine ions in electrolyte, also, transferring electrons into electrolyte. In this case, it is expected that characteristics of Pt electrodes strongly depend on fabrication process and its surface condition. In this study, Pt electrodes were prepared by a electro-deposition and a RF magnetron sputtering. Electrochemical behavior of Pt electrodes was compared using cyclic-voltammetry and impedance spectroscopy. Surface morphology of Pt electrodes was investigated by FE-SEM and AFM. I-V characteristics of DSSC were measured and discussed in association with the surface properties of counter electrode. As a result, electrochemical properties of electro-deposited Pt electrode were superior to that of sputtered Pt electrode. This is likely that enlarged area of surface in electro-deposited Pt electrode in comparison with the case of sputtered Pt electrode playa role in enhancing such electrochemical properties.

• Proceedings of the SAREK Conference
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• 2008.11a
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• pp.363-368
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• 2008

Nitrogen oxides (NO, $NO_2$ and $N_2O$) have been controlled effectively by the SCR catalysts coated on monolith or honeycomb in commercial sites with ammonia as reductant at high temperature range $300{\sim}400^{\circ}C$. However, the catalytic filter has much merit on the point of controlling the particles and nitrogen oxides simultaneously. It will be more advanced-system if the catalytic working temperature is reduced to the normal filtration temperature of under $200^{\circ}C$. This study has focus on the development of the catalytic filter working at the low temperature. So the additive effect of the components such as Pt and Mn (which are known the catalytic component of $V_2O_5/TiO_2$ was investigated. The $V_2O_5-WO_3$ catalytic filter exhibited high activity and selectivity at $250{\sim}320^{\circ}C$ showing more than 95% NO conversion for the treatment of 600 ppm NO at face velocity 2 cm/s. The Pt-$V_2O_5-WO_3$ catalytic filter shifted the optimum working temperature towards the lower temperature ($170{\sim}200^{\circ}C$). And NO conversion was 100% and higher than that of $V_2O_5-WO_3$ catalyst at $250{\sim}320^{\circ}C$. The $MnO_X-V_2O_5-WO_3$ catalytic filter showed the wide temperature range of $220{\sim}330^{\circ}C$ for more than 95% NO conversion. This is a remarkable advantage when considered the $MnO_X$ catalytic filter presents the maximum activity at $150{\sim}250^{\circ}C$ and $V_2O_5-WO_3$ catalytic filter shows the maximum activity at $250{\sim}320^{\circ}C$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.209-210
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• 2006

Organic binders are usually pre-mixed with ceramic powders to enhance the formability during the shape forming process. These binders, however, must be eliminated before sintering in order to avoid pore formation and unusual grain growth during sintering. The present work was performed to investigate the effects of residual binder on grain growth behavior during sintering of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ piezoelectric ceramics. The microstructures of sintered samples were examined for various thermal processes and atmosphere at debinding. Addition of binder seems to promote abnormal grain growth especially in incompletely debinded regions and to make the grain shape change from corner-rounded to faceted.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.195-198
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• 1999

A Bi$_4$Ti$_3$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM. The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG analysis. The BIT thin film deposited on Pt/Ta/SiO$_2$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100㎸/cm is 4.71$mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250㎸/cm, the remanent polarization (Pr) and the coercive field (Ec) are 5.92$mutextrm{A}$/$\textrm{cm}^2$ and 86.3㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.555-559
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• 2006

Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.198-198
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• 2015

전기변색재료는 전압을 인가하였을 때 전계방향에 따라 가역적으로 색이 변화하는 재료를 말한다. 스마트윈도우용 전기 변색재료는 지속적으로 전기를 가해줄 필요 없이 한번 변색되면 색이 지속되는 특징을 가지므로 에너지 효율적으로 우수하여 태양열 차단 창호나 디스플레이 분야에 응용될 것으로 기대된다. 이러한 전기 변색재료에는 산화형 전기 변색 재료, 환원형 전기 변색 재료가 있는데 이중 가장 널리 연구되고 있는 재료는 환원형 전기변색재료이다. 대표적인 재료로 $WO_3$가 쓰이는 데 이는 전기 변색적 특성이 우수하고 또한 내구성이 다른 재료에 비해 우수하다는 장점 때문이다. 그러나, 상용화를 위해서는 내구성의 개선이 요구되고 있다. 한편, $TiO_2$는 안정성이 매우 뛰어나지만 전기변색적 특성이 $WO_3$에 비해 낮은 점이 지적되고 있다. 이러한 $WO_3$ 및 $TiO_2$ 박막은 스퍼터링 또는 sol-gel법 등으로 제작되고 있는데, 일반적으로 스퍼터링의 경우 치밀한 박막이 형성되기 때문에 Porous 한 박막을 얻기 힘들다. 따라서 본 연구에서는 기판에 입사하는 스퍼터 입자들의 각도를 조절하여 shadowing 효과로 인해 박막의 구조가 porous해지는 Glancing angle deposition을 도입하였다. 이러한 증착법을 이용하여 $WO_3$와 $TiO_2$를 각도를 조절하여 증착하고 $TiO_2$와 $WO_3$ 박막의 특성을 비교하여 본다. 두께 300 nm를 가지는 $WO_3$ 및 $TiO_2$ 박막은 GLAD RF 마그네트론 스퍼터링법을 이용하여 Corning glass(corning E-2000)기판 위에 증착하였다. 기판 입사 각도는 $0^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$로 증착하였고 직경 3 in의 $TiO_2$, $WO_3$ 타겟을 사용하였다. 또한 스퍼터링 파워는 400 W, 작업압력 1.0 Pa, 그리고 스퍼터링 가스는 O2/Ar+O2 유량 10%에서 30%로 증착을 상온에서 진행하였다. 전기화학적 특성을 평가하기 위하여 $TiO_2$ 및 $WO_3$ 박막을 100 nm 두께의 ITO/glass 위에서 증착하였다. 박막의 미세구조는 XRD와 SEM을 통해 확인하였고, 전기화학적 특성은 Ar 분위기의 Glove box안에서 parstat 2273을 통해 측정하였다. 전해질은 1 M $LiPF_6/PC$로 진행하였고, 대향 전극는 Pt전극을, 참고 전극은 칼로멜 전극을 사용하였다. Potential 범위는 2 V에서 4 V로 진행하였고, scan rate는 50 mV/s로 측정하였다. 투과도는 UV/VIS spectrometer로 측정하였다. 전기변색 특성의 상관관계 및 에 대해서는 학회 당일 발표할 예정이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.132-135
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (B $a_{x}$ S $r_{l-x}$)Ti $O_3$(BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/ $SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2000($\AA$). Dielectric constant and loss of thin films was little decreased at 1[KHz] ~1[KHz]. Dielectric constant and loss to frequency were 250 and 0.02 in $Ba_{0.7}$S $r_{0.3}$Ti $O_3$. The properly of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].