• Rapid Communication in Photoscience
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• v.1 no.2
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• pp.64-64
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• 2012

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.175-175
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• 2009

최근 전자 소자의 소형화 집적화에 따른 대응 방안으로 한 개의 소자에 두가지 이상의 물리적 특성을 갖는 다기능성 소재의 개발에 많은 연구가 진행되고 있다. 다강체는 강유전성 (ferroelectricty ), 강자성 (ferromagnetism), 강탄성 (ferroelasticity) 중에서 두 개 이상의 현상을 나타내는 재료로, 이중에서도 특히 강유전성과 강자성을 동시에 나타내는 다강체가 학계 및 산업계로부터 집중적인 관심을 받으면서 최근 이 분야 연구가 국내 외적으로 매우 활발하게 이루어지고 있다. 이는 다강체를 이용하면 기존의 강유전 현상을 이용한 메모리소자인 FRAM이나 차세대 메모리소자로 주목을 받고 있는 MRAM을 결합한 새로운 방식의 메모리소자의 탄생이 가능할 수도 있기 때문이다. 즉, 일부 다강체가 나타내는 magnetoelectric (ME) 현상을 이용하면 자기적으로 신호를 인가하여 전기신호로 데이터를 저장하거나 또는 전기적으로 신호를 인가하여 자기적으로 데이터를 저장하는 것이 가능해지기 때문이다. 이 연구에서는 다강체 특성을 가지는 $Fe/BaTiO_3$ 이중박막을 IBSD(Ion Beam Sputter Deposition)을 이용하여 (111)Pt/Ti/$SiO_2/Si$ 기판에 증착을 하여 구조적, 전기적, 자기적 특성을 토론할 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• Journal of the Korean Ceramic Society
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• v.45 no.6
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• pp.331-335
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• 2008

The purpose of this study is to characterize the photo-catalytic efficiency of $TiO_2$ nanotube with respect to the distribution of anatase phase which can be changed by the annealing temperature of $TiO_2$ nanotube. $TiO_2$ nanotube was fabricated by the anodization method in the 0.5 wt% HF electrolyte. And then the $TiO_2$ nanotube was annealed at temperatures ranging from $380^{\circ}C$ to $780^{\circ}C$ in dry oxygen ambient for 2 h. For the photo-catalytic water-splitting tests, the photocurrent density was measured as a function of applied potential with a potentiostat using a Ag/AgCl reference, Pt counter electrode, and 1 M KOH electrolyte under illumination of UV by a Xe arc lamp of 1 KW. According to the UV photo-catalytic water-splitting tests, the nanotube annealed at $560^{\circ}C$ was found to show the highest photocurrent density.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.3
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• pp.544-547
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_{2}O_{9}$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition temperature. The optimum conditions of RF power and Ar/$O_2$ ratio were 60[W] and 70/30, respectively. Deposition rate of SBN thin films was about 4.17[nm/min]. The crystallinity of SBN thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}400[^{\circ}C]$, the surface rougness showed about 4.33[nm]. The capacitance of SBN thin films were increased with the increase of deposition temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.213-214
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• 2008

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 60[W] and 70/30, respectively. The crystallinity of SBN thin films were increased with increase of substrate temperature in the temperature range of 100~400[$^{\circ}C$]. The capacitance of SBN thin films were increased with the increase of substrate temperature.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.665-672
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• 2000

The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.372-372
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• 2011

염료 감응형 태양전지는 상,하판 투명전극(TCO), 나노입자의 다공질 TiO2, 염료 고분자 층으로 구성된 광전극과 투명전극 및 백금(Pt) 박막으로 구성된 상대전극 그리고 두 전극 사이를 산화 환원용 전해질 용액으로 채우고 있는 구조이다. 이 구조에서 투명전극(TCO)은 재료비의 많은 부분을 차지하므로 제작비용 절감을 위한 TCO-less에 관한 연구가 활발히 진행 중이다. 본 연구에서는 TCO-less 염료 감응형 태양전지 제작을 위해 이중층 Ti 전극 구조를 제안하였다. 제작과정은 광조사 부분을 확보한 유리기판에 e-beam 증착법을 이용해 Ti 전극을 증착시킨 후 TiO2를 Ti전극과 일부 중첩하여 인쇄하고 그 위에 두 번째 Ti전극을 제작한다. 이중층 Ti전극 구조는 SEM, EIS 등의 분석장비를 사용하였고 기존 FTO 구조에 비해 단락전류밀도, 에너지 변환효율은 감소하였으나 직렬 내부저항이 약 27% 감소하여 fill factor가 28% 향상된 결과를 얻을 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.65-67
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• 1990

In this study, (0.80-x)Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ 0.05$\leq$x$\leq$0.20) ceramics were fabricated by the mixed oxide method, the sintering temperature and time were 950∼1200[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. Dielectric constant of 0.70PMN-0.2PT-0.10PNW composition with repeated calcination was increased rapidly. Increasing the Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ contents from 0.05 to 0.20 [mol], phase transition temperature was shifted from 68 to 2[$^{\circ}C$] and dielectric constant was decreased while sintered density was increased. In the specimens containing 0.10, 0.15[mol] of PNW, dielectri constants at room temperature were exhibited the highest values 11199, 10114, respectively. Resistivity of specimens were $10^{10}$ ∼ $10^{12}$($\Omega$.m) and there was no dependence on sintering temperature and composition.