• Journal of Sensor Science and Technology
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• v.16 no.1
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• pp.7-10
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• 2007

A thick film catalytic gas sensors which can be operated at $142^{\circ}C$ in presence of ultra violet-light emitting diode has been developed to measure hydrogen concentration in 0-5 % range. The sensing material as a combustion catalyst consists of $TiO_{2}$ (5 wt%) and Pd/Pt (20 wt%) supported on $Al_{2}O_{3}$ powder and the reference material to compensate the heat capacity of it in a bridge circuit was an catalyst free $Al_{2}O_{3}$ powder. Platinum heater and sensor materials were formed on the alumina plate by screen printing method and heat treatment. The effect of UV radiation in the presence of photo catalyst $TiO_{2}$ on the sensor sensitivity, response and recovery time has been investigated. The reduction of operating temperature from $192^{\circ}C$ to $142^{\circ}C$ for hydrogen gas sensing property in presence of UV radiation is attributed to the hydroxy radical and superoxide which was formed at the surface of $TiO_{2}$ under UV radiation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1008-1015
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• 2002

The fabricated La-modified lead titanate (PLT) thin film without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{l-x}La_{x}Ti_{l-x/4}O_3$(x=0.1) (PLT(10)) thin film haying 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}C$$textrm{cm}^2$$.$K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03 x $10^{-11}C$.cm/J and 1.46 x $10^{-10}C$.cm/J, respectively The PLT(10) thin film has voltage responsivity (RV) of 5.IS V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity ($D^{*}$) of the PLT(10) thin film are 9.93 x $10^{-8}$W/$Hz^{1/2}$ and 1.81 x $10^{6}$cm.$Hz^{1/2}$/W at the same frequency of 100 Hz,, respectively The results means that PLT thin film having 10 mol% La content is suitable for the sensing materials of pyroelectric IR sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.959-962
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• 2001

In this study, the piezoelectric and dielectric properties and Temperature stability of resonant frequency with MnO$_2$doped 0.36Pb(Sc$_{1}$2/Nb$_{1}$2/)O$_3$- 0.25Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-0.39PbTiO$_3$(hereafter PSNNT) were investigated. The tetagonality of crystal structure was developed with increasing MnO$_2$additive content. With increasing MnO$_2$additive content, the electromechanical coupling factor and quality factor were increased. Electromechanical coupling k$_{p}$ and quality factor Q$_{m}$ at MnO$_2$doped with 2.0mol% were showed highest value of 55.6% and 252. In the case of specimen for MnO$_2$doped with 2mol%, temperature dependance of resonant frequency had a good properties.ies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.12-19
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• 2001

In this study, the physical properties of the piezoelectric sounder with metal-piezoelectric ceramics were analyzed. The dielectric and piezoeletric properties of 0.5wt% MnO$_2$ and NiO doped 0.1Pb(Mg$\_$1/3/Nb$\_$2/3/)O$_3$-0.45PbTiO$_3$-0.45PbZrO$_3$ ceramics were investigated aiming at acoustic transducer applications. The acoustic characteristics of a thin circular disc-type with metal-piezoceramics have been investigated. Also, the acoustic characteristics for the geometrical form of case were investigated. The piezoelectric sounder with 200kHz resonant frequency and 20kHz bandwidth was designed by considering the sharp directivity and the sound pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.283-286
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• 2000

In this study, the acoustic transducer of a thin circular disc-type with PZT/Metal was manufactured. The piezoelectric transducer with 200kHz resonance frequency was designed by considering the sharp directivity and the sound pressure. The dielectric and piezoelectric properties of 0.5 weight percent $MnO_2$ and NiO doped $0.1Pb(Mg_{1/3}Nb_{2/3})O_3-0.45PbTiO_3-0.42PbZrO_3$ ceramics were investigated aiming at acoustic transducer applications. Also, the acoustic characteristics of a thin circular disc-type with metal-piezoceramics have been Investigated.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.351-356
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• 1996

The quartemary system ceramics 0.5[xPb(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-(1-x)Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_{3}$]-0.5[yPbTiO$_{3}$-(1-y) PbZrO$_{3}$ for piezoelectric actuators were prepared bv the were added to the raw materials up to 5 mole. Sintering temperature was varied form 1000.deg. C to 1200.deg. C. Sintering characteristrics, dielectric and piezoelectric properties were then investigated. Piezoelectric properties of sample prepared by the molten salt method were improved compared to those prepared by the conventional method. Addition of PZN shifted morphotropic phase boundary to more Zr-rich composition and decreased the piezoelectric properties.

• Journal of the Korean Electrochemical Society
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• v.15 no.2
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• pp.90-94
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• 2012

We report nanostructure electrodes with $TiO_2$ as a core and carbon as a shell ($TiO_2$@C) for oxygen reduction in alkaline solution. The structure of core-shell electrodes is characterized by transmission electron microscopy, Raman spectroscopy, X-ray diffraction method, and X-ray photoelectron microscopy. The electrochemical properties of the $TiO_2$@C electrodes are characterized using a potentiostat and compared with those of carbon supported Pt catalyst. In particular, the core-shell electrode with dominant pyridinic-N component exhibits an imporved electrocatalytic activity for oxygen reduction reaction in alkaline solution.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.173-176
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• 2002

B $i_{3.3}$L $a_{0.7}$ $Ti_{3}$ $O_{12}$(BLT) 강유전체 박막을 Pt/Ti/ $SiO_2$/Si 기판위에 졸-겔법 (sol-gel method) 으로 스핀코팅하여 Metal-Ferroelectric-Metal(MFM) 구조의 커패시터를 형성하였다. BLT 박막의 결정성은 후속열처리 온도가 증가할수록 향상되었으며 $R_{근}$값은 as~coated된 BLT 박막의 경우 3.8$\AA$를 나타내었으나 열처리 온도를 $700^{\circ}C$로 증가한 경우 12.9$\AA$으로 거칠은 표면형상으로 변화되었다. $650^{\circ}C$로 열처리된 BLT 박막의 잔류분극 2Pr ($\pm$($P^{*}$ -$P^{ ^}$))값은 5V 인가전압에서 약 29.1 $\mu$C/$cm^2$을 나타내었다. 또한 $10^{10}$ 스위칭 cycles 가지 분극 스위칭을 반복한 후에도 뚜렷한 잔류분극의 변화를 발견할 수 없어서 우수한 피로특성을 나타내었다. 3V 전압에서 BLT 박막의 누설전류는 약 2.2$\times$$10^{-8}$ A/$cm^2$를 나타내었다.내었다.었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.663-669
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• 2014

The electrical characteristics of RRAM with different annealing temperature and thickness have been measured and discussed. The devices with Pt/Ti top electrode of 150nm, Pt bottom electrode of 150nm, $HfO_2$ oxide thickness of 45nm and 70nm have been fabricated. The fabricated device were classified by 3 different kinds according to the annealing temperature, such as non-annealed, annealed at $500^{\circ}C$ and annealed at $850^{\circ}C$. The set and reset voltages and the variation of resistance with temperatures have been measured as electrical properties. From the measurement, it was found that the set voltages were decreased and the reset voltage were increased slightly, and thus the sensing window was decreased with increasing of measurement temperatures. It was remarkable that the device annealed at $850^{\circ}C$ showed the best performances. Although the device with thickness of 45nm showed better performances in the point of the sensing window, the resistance of 45nm devices was large relatively in the low resistive state. It can be expected to enhance the device performances with ultra thin RRAM if the defect generation could be reduced at the $HfO_2$ deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.168-170
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• 1994

Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.