• 한국세라믹학회지
• /
• 제37권3호
• /
• pp.233-239
• /
• 2000

Sr0.9Bi2+xTa2O9(x=0, 0.1, 0.2, 0.3) thin films on IrO2/SiO2/Si or Pt/Ti/SiO2/Si substrate were prepared by spin coating method using SBT stock solutions synthesized by MOD process. SBT thin films on IrO2 transformed to layered perovskite phase at $700^{\circ}C$, but showed low breakdown voltage due to their porous microstructure. The smaple of Sr0.9Bi2+xTa2O9 composition showed the best dielectric and electrical properties. When the sample of the same composition was annealed at 80$0^{\circ}C$, the dielectric and electric properties were improved due to the grian growth and dense surface. the remanent polarization values(2Pr) at $\pm$3 V for IrO2 and Pt electrodes were 10.5, 7.15$\mu$C/$\textrm{cm}^2$, respectively. The SBT thin film with IrO2 electrode showed the lower coercive field. The leakage current density and breakdown voltage of SBT thin films on IrO2 were higher than those on Pt.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.337-337
• /
• 2012

Dye sensitized solar cell (DSSC) having high efficiency with low cost was first reported by Gr$\ddot{a}$tzel et al. Many DSSC research groups attempt to enhance energy conversion efficiency by modifying the dye, electrolyte, Pt-coated electrode, and $TiO_2$ films. However, there are still some problems against realization of high-sensitivity DSSC such as the recombination of injected electrons in conduction band and the limited adsorption of dye on $TiO_2$ surface. The surface of $TiO_2$ is very important for improving hydrophilic property and dye adsorption on its surface. In this paper, we report a very efficient method to improve the efficiency and stability of DSSC with nano-structured $TiO_2$. Atmospheric plasma system was utilized for nitrogen plasma treatment on nano-structured $TiO_2$ film. We confirmed that the efficiency of DSSC was significantly dependent on plasma power. Relative in the $TiO_2$ surface change and characteristics after plasma was investigated by various analysis methods. The structure of $TiO_2$ films was examined by X-ray diffraction (XRD). The morphology of $TiO_2$ films was observed using a field emission scanning electron microscope (FE-SEM). The surface elemental composition was determined using X-ray photoelectron spectroscopy (XPS). Each of plasma power differently affected conversion efficiency of DSSC with plasma-treated $TiO_2$ compared to untreated DSSC under AM 1.5 G spectral illumination of $100mWcm^{-2}$.

• 한국결정성장학회지
• /
• 제10권3호
• /
• pp.245-251
• /
• 2000

Pb($(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3$세라믹스에서 NiO첨가에 따른 유전, 압전 및 기계적 특성의 변화를 연구하였다. Columbite precursor법을 사용하여 분말을 제조 후 공기중에서 $1100^{\circ}C$~$1250^{\circ}C$의 온도로 2시간 소결하여 시편을 제조하였다. $1150^{\circ}C$이하 온도에서 소결한 시편에서는 NiO를 1 mol% 첨가시까지 유전상수와 압전상수가 증가하였으나 첨가량이 그 이상 증가함에 따라 감소하였는데 이는 NiO가 소결조제 역할을 한 것으로 보여진다. 그러나 $1200^{\circ}C$ 이상 온도에서 소결한 시편에서는 NiO 첨가량 증가에 따라 유전상수와 전기기계결합계수가 감소하였으며, 기계적품질계수는 증가하였다. 경도 및 파괴인성은 1 mol% 첨가시 최대 값을 보이다가 그 이후 감소하였다. NiO 첨가 PNN-PT-PZ 세라믹스의 전기적 및 기계적 특성은 결정립크기, 소결밀도 및 2차상의 양 등의 미세구조적 요소와 긴밀한 관계가 있음을 보여준다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.244-247
• /
• 1999

The(Sr$\sub$0.85/Ca$\sub$0.15/) TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at room temperature is close to stoichiometry(1.102 in A/B ratio). Also, SCT thin films deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$].The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$].

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.311-314
• /
• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• Bulletin of the Korean Chemical Society
• /
• 제28권9호
• /
• pp.1463-1466
• /
• 2007

Single phases of multi-component oxides films, ZrTiO4 and Ta2Zr6O17, could be synthesized by using the combinatorial approach through surface sol-gel route, coating the appropriate mole ratio of 100 mM zirconium butoxide, tantalum butoxide and titanium butoxide precursors on Pt/Ti/SiO2/Si (100) substrate, following pyrolysis at 450 oC, and annealing them at 770 oC. Both the films and bulks of ZrTiO4 and Ta2Zr6O17 showed very stable dielectric properties in temperature range, ?140 to 60 oC, and frequency range, 100 Hz to 1 MHz, promising their applications in wide range of temperatures and frequencies. The dielectric constants of the films were lower and a little more dependent on frequency than those of the bulks. The reduction of dielectric property in the film was mainly due to the interfacial effects that worked as series and parallel-connected capacitances toward the substantial film capacitance.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2000년도 하계학술대회 논문집 C
• /
• pp.1809-1811
• /
• 2000

High power piezoelectric materials are presently being extensively developed for applications such as ultrasonic motors and piezoelectric transformer In this study, the piezoelectric and dielectric properties of $MnO_2$ doped $0.36Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.25Pb(Ni_{1/3}Nb_{2/3})O_{3}-0.39PbTiO_3$ (hereafter PSNNT), which is the morphotropic phase boundary composition of the PSN-PNN-PT system were investigated. $MnO_2$-addition into the $0.36Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.25Pb(Ni_{1/3}Nb_{2/3})O_{3}-0.39PbTiO_3$ composition increases the piezoelectric coefficient up to $k_{p}{\fallingdotseq}$55.6[%] and $Q_{m}{\fallingdotseq}$252. Moreover, $MnO_2$ addition makes tetragonal phase more stable with respect to rhombohedral phase.

• 한국세라믹학회지
• /
• 제26권3호
• /
• pp.409-415
• /
• 1989

Si3N4-TiN electro-conductive ceramic composites with 7wt% Al2O3＋3wt% Y2O3 or 5wt% MgO as sintering aids were fabricated by pressureless sintering at 1,80$0^{\circ}C$ for 1h. The 3pt. flexural strength, KIC and Vickers hardness were measrued in order to investigate the effects of TiN on the mechanical properties. Also oxidation behavior was observed by measuring the weight gain after exposure to air at 1,10$0^{\circ}C$ for 100h. the reaction products between Si3N4 and TiN was not detected by XRD and EDS. Mechanical properties of the composites were not influenced by the addition of TiN less than 30vol%, but oxidation resistance of the composites was rapidly decreased with the amount of added TiN.

• 한국세라믹학회지
• /
• 제31권8호
• /
• pp.886-892
• /
• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2007년도 동계학술연구발표회 및 스핀트로닉스와 나노물리에관한 국제심포지움
• /
• pp.50-51
• /
• 2007