• Journal of Advanced Marine Engineering and Technology
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• 제30권8호
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• pp.894-900
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• 2006

The electrical characteristics associated with crystal structure changes as a function of La content for $(Pb_{1-x}La_x)(Zr_{0.5}Ti_{0.5})O_3$ thin films were investigated for applications in memory capacitors. Tetragonality of PLZT films decreased with increasing La content. Thin films with La $\geq$ 20 mol% were found to be cubic. Films with La $\geq$ 12 mol% exhibited broader dielectric peaks compared to those of bulk ceramics and behaved as relaxer ferroelectrics. Tetragonal PLZT film with 12 mol% La had a dielectric constant maximum of 1330 at room temperature and a charge storage density of ${\sim}18{\mu}C/cm^2$ at 5 V. Decrease in coercive field and remnant polarization with increase in La content were resulting from less dipolar response caused by the decreased crystal anisotropy. The leakage current densities $<10^{-8}A/cm^2$ up to 5 V bias voltage were observed for the films with La $\geq$ 14 mol%.

• 한국분말재료학회지
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• 제13권2호
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• pp.112-118
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• 2006

[ $R_{1/3}Sr_{2/3}FeO_{3}$ ](R=Pr, Nd, and Sm) was synthesized and their magnetic properties and charge ordering(CO) transition related with lattice dynamics and oxygen vacancy were systematically investigated. The charge disproportion ation(CD) in $R_{1/3}Sr_{2/3}FeO_{3}$(R=Pr,Nd) was in which two kins of iron with valence state $Fe^{3+}$ and $Fe^{5+}$ were found with ratio of 2:1. In this charge ordering state a sequence of $Fe^{3+}Fe^{3+}Fe^{5+}Fe^{3+}Fe^{3+}Fe^{5+}$ exists aligned along the [111] direction of the pseudocubic perovskite structure. The charge ordering exist in distorted structure involving $t_{pd}$ hybridization. The disordering phases coexist in distorted structure as temprature in creases that is controlled amount of oxygen vacancy. The magnetic hyperfine fields indicate charge tranfering temperature as it dissapeared drastically.

• 대한전기학회논문지
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• 제43권4호
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• pp.613-619
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• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.