• 제목/요약/키워드: Proton beam generation

검색결과 13건 처리시간 0.028초

Design Study for Pulsed Proton Beam Generation

  • Kim, Han-Sung;Kwon, Hyeok-Jung;Seol, Kyung-Tae;Cho, Yong-Sub
    • Nuclear Engineering and Technology
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    • 제48권1호
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    • pp.189-199
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    • 2016
  • Fast neutrons with a broad energy spectrum, with which it is possible to evaluate nuclear data for various research fields such as medical applications and the development of fusion reactors, can be generated by irradiating proton beams on target materials such as beryllium. To generate short-pulse proton beam, we adopted a deflector and slit system. In a simple deflector with slit system, most of the proton beam is blocked by the slit, especially when the beam pulse width is short. Therefore, the available beam current is very low, which results in low neutron flux. In this study, we proposed beam modulation using a buncher cavity to increase the available beam current. The ideal field pattern for the buncher cavity is sawtooth. To make the field pattern similar to a sawtooth waveform, a multiharmonic buncher was adopted. The design process for the multiharmonic buncher includes a beam dynamics calculation and three-dimensional electromagnetic simulation. In addition to the system design for pulsed proton generation, a test bench with a microwave ion source is under preparation to test the performance of the system. The design study results concerning the pulsed proton beam generation and the test bench preparation with some preliminary test results are presented in this paper.

Non volatile memory device using mobile proton in gate insulator by hydrogen neutral beam treatment

  • 윤장원;장진녕;홍문표
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.192.1-192.1
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    • 2015
  • We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.

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Design and fabrication of beam dumps at the µSR facility of RAON for high-energy proton absorption

  • Jae Chang Kim;Jae Young Jeong;Kihong Pak;Yong Hyun Kim;Junesic Park;Ju Hahn Lee;Yong Kyun Kim
    • Nuclear Engineering and Technology
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    • 제55권10호
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    • pp.3692-3699
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    • 2023
  • The Rare isotope Accelerator complex for ON-line experiments in Korea houses several accelerator complexes. Among them, the µSR facility will be initially equipped with a 600 MeV and 100 kW proton beam to generate surface muons, and will be upgraded to 400 kW with the same energy. Accelerated proton beams lose approximately 20% of the power at the target, and the remaining power is concentrated in the beam direction. Therefore, to ensure safe operation of the facility, concentrated protons must be distributed and absorbed at the beam dump. Additionally, effective dose levels must be lower than the legal standard, and the beam dumps used at 100 kW should be reused at 400 kW to minimize the generation of radioactive waste. In this study, we introduce a tailored method for designing beam dumps based on the characteristics of the µSR facility. To optimize the geometry, the absorbed power and effective dose were calculated using the MCNP6 code. The temperature and stress were determined using the ANSYS Mechanical code. Thus, the beam dump design consists of six structures when operated at 100 kW, and a 400 kW beam dump consisting of 24 structures was developed by reusing the 100 kW beam dump.

RESEARCH ON LASER-ACCELERATED PROTON GENERATION AT KAERI

  • PARK SEONG HEE;LEE KITAE;CHA YOUNG HO;JEONG YOUNG UK;BAIK SUNG HOON;YOO BYUNG DUK
    • Nuclear Engineering and Technology
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    • 제37권3호
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    • pp.279-286
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    • 2005
  • A prototype of a relativistic proton generation system, based on laser-induced plasma interaction, has been designed and fabricated. The system is composed of three major parts: a fs TW laser; a target chamber, including targets and controls; and a diagnostic system for charged particles and lasers. An Offner-type pulse stretcher for chirped pulse amplification (CPA) and eight pass pre-amplifier are installed. The main amplifier will be integrated with a new pumping laser. The design values of the laser at the first stage are 1 TW in power and 50 fs in pulse duration. We expect to generate protons with their maximum energy of approximately 3 MeV and the flux of at least $10^6$ per pulse using a 10 $\mu$m Al target. A prototype target chamber with eight 8-inch flanges, including target mounts, has been designed and fabricated. For laser diagnostics, an adaptive optics based on the Shack-Hartmann type, beam monitoring, and alignment system are all under development. For a charged particle, CR-39 detectors, a Thomson parabola spectrometer, and Si charged-particle detectors will be used for the density profile and energy spectrum. In this paper, we present the preliminary design for laser-induced proton generation. We also present plans for future work, as well as theoretical simulations.

Improvement of Proton Beam Quality from the High-intensity Short Pulse Laser Interaction with a Micro-structured Target

  • Seo, Ju-Tae;Yoo, Seung-Hoon;Pae, Ki-Hong;Hahn, Sang-June
    • Journal of the Optical Society of Korea
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    • 제13권1호
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    • pp.22-27
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    • 2009
  • Target design study to improve the quality of an accelerated proton beam from the interaction of a high-intensity short pulse laser with an overdense plasma slab has been accomplished by using a two-dimensional, fully electromagnetic and relativistic particle-in-cell (PIC) simulation. The target consists of a thin core part and a thick peripheral part of equivalent plasma densities, while the ratio of the radius of the core part to the laser spot size, and the position of the peripheral part relative to the fixed core part were varied. The positive effects of this core-peripheral target structure could be expected from the knowledge of the typical target normal sheath acceleration (TNSA) mechanism in a laser-plasma interaction, and were apparently evidenced from the comparison with the case of a conventional simple planar target and the case of the transversal size reduction of the simple planar target. Improvements of the beam qualities including the collimation, the forward directionality, and the beam divergence were verified by detailed analysis of relativistic momentum, angular directionality, and the spatial density map of the accelerated protons.

Demonstration of the Effectiveness of Monte Carlo-Based Data Sets with the Simplified Approach for Shielding Design of a Laboratory with the Therapeutic Level Proton Beam

  • Lai, Bo-Lun;Chang, Szu-Li;Sheu, Rong-Jiun
    • Journal of Radiation Protection and Research
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    • 제47권1호
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    • pp.50-57
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    • 2022
  • Background: There are several proton therapy facilities in operation or planned in Taiwan, and these facilities are anticipated to not only treat cancer but also provide beam services to the industry or academia. The simplified approach based on the Monte Carlo-based data sets (source terms and attenuation lengths) with the point-source line-of-sight approximation is friendly in the design stage of the proton therapy facilities because it is intuitive and easy to use. The purpose of this study is to expand the Monte Carlo-based data sets to allow the simplified approach to cover the application of proton beams more widely. Materials and Methods: In this work, the MCNP6 Monte Carlo code was used in three simulations to achieve the purpose, including the neutron yield calculation, Monte Carlo-based data sets generation, and dose assessment in simple cases to demonstrate the effectiveness of the generated data sets. Results and Discussion: The consistent comparison of the simplified approach and Monte Carlo simulation results show the effectiveness and advantage of applying the data set to a quick shielding design and conservative dose assessment for proton therapy facilities. Conclusion: This study has expanded the existing Monte Carlo-based data set to allow the simplified approach method to be used for dose assessment or shielding design for beam services in proton therapy facilities. It should be noted that the default model of the MCNP6 is no longer the Bertini model but the CEM (cascade-exciton model), therefore, the results of the simplified approach will be more conservative when it was used to do the double confirmation of the final shielding design.

Non volatile memory TFT using mobile proton in gate dielectric by hydrogen neutral beam treatment

  • Yun, JangWon;Jang, Jin Nyoung;Hong, MunPyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.231-232
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    • 2016
  • We have fabricated the nc-Si, IGZO based nonvolatile memory TFTs using mobile protons, which can be generated by simple hydrogen insertion process via H-NB treatment at room temperature. The TFT devices above exhibited reproducible hysteresis behavior, stable ON/OFF switching, and non-volatile memory characteristics. Also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and our modified H-NB CVD. The room temperature proton-insertion process can reveal flexible inorganic based all-in-one display panel including driving circuit and memory circuit.

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방사선빔 조사를 이용한 질화갈륨 기반 트랜지스터의 내방사선 특성 연구 (Radiation Hardness Evaluation of GaN-based Transistors by Particle-beam Irradiation)

  • 금동민;김형탁
    • 전기학회논문지
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    • 제66권9호
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    • pp.1351-1358
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    • 2017
  • In this work, we investigated radiation hardness of GaN-based transistors which are strong candidates for next-generation power electronics. Field effect transistors with three types of gate structures including metal Schottky gate, recessed gate, and p-AlGaN layer gate were fabricated on AlGaN/GaN heterostructure on Si substrate. The devices were irradiated with energetic protons and alpha-particles. The irradiated transistors exhibited the reduction of on-current and the shift of threshold voltage which were attributed to displacement damage by incident energetic particles at high fluence. However, FET operation was still maintained and leakage characteristics were not degraded, suggesting that GaN-based FETs possess high potential for radiation-hardened electronics.