• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.1A
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• pp.26-34
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• 2002

Mobile telecommunication systems such as IS-95 and IMT-2000 employ frame based communication using frames up to 20 msec in length and the receiving end has to store the whole frome before it is being processed. The size of the frame buffer ofter dominates those of the processing unit such as soft decision Viterbi decoder. The frame buffer for IMT-2000, for example, has to be increased 80 times as large as that of IS-95. One of the parameters deciding the number of bits in a frame will be obviously the number of bits in soft quantization. Start after striking space key 2 times. This paper has studied a new aspect of offset and quantization step size on BER performance and proposes a new 3-bit soft quantization algorithm which shows similar performance as that of 4-bit soft decision Viterbi receiver. The optimal offset values and step sizes for the other practical quantization levels ---16, 8, 4, 2--- have also been found. In addition, a new optimal symbol metric table has been devised which takes the accumulation value of various repeated signals and produces a rescaled 3-bit valu.tart after striking space key 2 times.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.48 no.5
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• pp.88-98
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• 2011

Recently, according as the importance of GIS(geography information system) database security is embossed, much researches had been achieved about GIS network security. But most such researches are weak against sourceful illegal reproductions and distributions of GIS vector data map. In this paper, we proposed an efficient layer unit contents based partial encryption technique in the vector map compression domain to prevent illegal distributions and unauthorized accesses. This method achieves a partial encryption about each central coordinate and directional parameters of a MCA(minimum coding attribute) that is created at the vector map compression processing in the vector space. First, the position encryption is applied as permutating randomly the center coordinate of each record that is minimum unit of vector map shape. And second, the direction encryption that changing shapes of vector map topography is applied as encrypting the direction of vertices's coordinates of each record. In experimental results, we confirmed that our proposed method can encipher the large volumed vector map data effectively in low computational complexity. Also, we could minimize the decline of compression efficiency that occurred by conventional contents based encryption schemes using AES or DES algorithms.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.15-21
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• 1993

This paper describes the design and development of a KrF excimer laser stepper and discusses the detailed system parameters and characterization data obtained from the performance test. We have developed a deep UV step-and-repeat system, operating at 248 nm, by retrofitting a commercial modules such as KrF excimer laser, precision wafer stage and fused silica illumination and 5X projection optics of numerical aperture 0.42. What we have developed, to the basic structure, are wafer alignment optics, reticle alignment system, autofocusing/leveling mechanisms and environment chamber. Finally, all these subsystem were integrated under the control of microprocessor-based controllers and computer. The wafer alignment system comprises the OFF-AXIS and the TTL alignment. The OFF-AXIS alignment system was realized with two kinds of optics. One is the magnification system with the image processing technique and the other is He-Ne laser diffraction type system using the alignment grating on the wafer. 'The TTL alignment system employs a dual beam inteferometric method, which takes advantages of higher diffraction efficiency compared with other TTL type alignment systems. As the results, alignment accuracy for OFF-AXIS and TTL alignment system were obtained within 0.1 $\mu\textrm{m}$/ 3 $\sigma$ for the various substrate on the wafers. The wafer focusing and leveling system is modified version of the conventional systems using position sensitive detectors (PSD). This type of detection method showed focusing and leveling accuracies of about $\pm$ 0.1 $\mu\textrm{m}$ and $\pm$ 0.5 arcsec, respectively. From the CD measurement, we obtained 0.4 $\mu\textrm{m}$ resolution features over the full field with routine use, and 0.3 $\mu\textrm{m}$ resolution was attainable under more strict conditions.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.19 no.2
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• pp.173-181
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• 2001

It is very important to assess spatial data quality of a digital map produced through digital map generalization. In this study, as a aspect of spatial data quality maintenance, we examined the tolerate range of theoretical expectation accuracy and established the quality assessment standard in spatial data for the transformed digital map data do not act contrary to the digital map specifications and the digital map accuracy of the relational scale. And, transforming large scale digital map to small scale, if we reduce complexity through processes as simplification, smoothing, refinement and so on., the spatial position change may be always happened. thus, because it is very difficult to analyse the spatial accuracy of the transformed position, we used the buffering as assessment method of spatial accuracy in digital map generalization procedure. Although the tolerated range of generic positioning error for l/l, 000 and l/5, 000 scale is determined based on related law, because the algorithms adapted to each processing elements have different property each other, if we don't determine the suitable parameter and tolerance, we will not satisfy the result after generalization procedure with tolerated range of positioning error. The results of this study test which is about the parameters of each algorithm based on tolerated range showed that the parameter of the simplification algorithm and the positional accuracy are 0.2617 m, 0.4617 m respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.3
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• pp.639-647
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• 2011

In this paper, we introduce a design methodology of data-centroid Radial Basis Function neural networks with extended polynomial function. The two underlying design mechanisms of such networks involve K-means clustering method and Particle Swarm Optimization(PSO). The proposed algorithm is based on K-means clustering method for efficient processing of data and the optimization of model was carried out using PSO. In this paper, as the connection weight of RBF neural networks, we are able to use four types of polynomials such as simplified, linear, quadratic, and modified quadratic. Using K-means clustering, the center values of Gaussian function as activation function are selected. And the PSO-based RBF neural networks results in a structurally optimized structure and comes with a higher level of flexibility than the one encountered in the conventional RBF neural networks. The PSO-based design procedure being applied at each node of RBF neural networks leads to the selection of preferred parameters with specific local characteristics (such as the number of input variables, a specific set of input variables, and the distribution constant value in activation function) available within the RBF neural networks. To evaluate the performance of the proposed data-centroid RBF neural network with extended polynomial function, the model is experimented with using the nonlinear process data(2-Dimensional synthetic data and Mackey-Glass time series process data) and the Machine Learning dataset(NOx emission process data in gas turbine plant, Automobile Miles per Gallon(MPG) data, and Boston housing data). For the characteristic analysis of the given entire dataset with non-linearity as well as the efficient construction and evaluation of the dynamic network model, the partition of the given entire dataset distinguishes between two cases of Division I(training dataset and testing dataset) and Division II(training dataset, validation dataset, and testing dataset). A comparative analysis shows that the proposed RBF neural networks produces model with higher accuracy as well as more superb predictive capability than other intelligent models presented previously.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.3
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• pp.572-579
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• 2009

A monitoring system needs many parameters to increase devices for monitoring data and to support various services. In particular, monitoring the status of a device in a wireless mobile environment has a difficulty in displaying multi data in a limited screen size, and transfer of the status data of a device into a network is largely related with network traffic. The research aims at designing a control board that collects data in order to effectively manage a greenhouse environment system. Also, the research tries to appropriately operate devices, environment data monitoring, and the control of each device by realizing a multiplexed interface based on a web. Thus, in the case in which a distributed client was a computer, monitoring and control were obtained with a web browser through the Lab VIEW web server of a server or local control module in order to effectively monitor and control according to the status of a user. In the case in which a client was a PDA, application of a wireless mobile considering the scale and data processing capacity of a displayer was connected. As a result of the research, we could confirm a satisfactory outcome from the viewpoint of a human-centered design by supplying adaptability and mobility according to the environment of a user.

• The KIPS Transactions:PartA
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• v.18A no.5
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• pp.215-224
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• 2011

In this paper, a mechanism connecting all weighted migration routes with minimum cost with EGOSST is proposed. Weighted migration routes may be converted to weighted input edges considered as not only traces but also traffics or trip frequencies of moving object on communication lines, roads or railroads. Proposed mechanism can be used in more wide and practical area than mechanisms considering only moving object traces. In our experiments, edge number, maximum weight for input edges, and detail level for grid are used as input parameters. The mechanism made connection cost decrease average 1.07% and 0.43% comparing with the method using weight minimum spanning tree and weight steiner minimum tree respectively. When grid detail level is 0.1 and 0.001, while each execution time for a connecting solution increases average 97.02% and 2843.87% comparing with the method using weight minimum spanning tree, connecting cost decreases 0.86% and 1.13% respectively. This shows that by adjusting grid detail level, proposed mechanism might be well applied to the applications where designer must grant priority to reducing connecting cost or shortening execution time as well as that it can provide good solutions of connecting migration routes with weights.