• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• Journal of Information Technology Services
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• v.11 no.sup
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• pp.51-60
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• 2012

In this paper, we provide the analysis of device model and method between device models for compatible M&S V&V of the NetSPIN. First of all, we analysis features, structure, and classification of the NetSPIN. The second, as a part of reliable V&V process, we analysis network system modeling process, correlation between device modeling process for M&S of the NetSPIN. The third, we suggest making a kind of pool of reference model and module of devices for the increase factor of reuse between device model. We also, at the point view of M&S V&V, conclude that there is the validity of the fidelity in device modeling process. Through the analysis of the NetSPIN device model and suggestion of the method for higher compatibility between device modes, the development process of device model be clearly understood. Also we present the effective method of the development for reliable device mode as the point of V&V.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.306-309
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• 2000

In this work, we investigated A1 cluster deposition on Al (100) surface using molecular dynamics simulation. A result of simulations showed that large cluster with low energy was proper for good surfaced-films without craters at the low temperatures. We investigated the maximum substrate temperature and the time taken for substrate temperature to reach its maximum as a function of cluster size in the case of the same total energy and in the case of the same energy Per atom. The correlated collisions play an important role in interaction between energetic cluster and surface, and as cluster size and cluster energy increases, the correlated collisions effect affects interaction between energetic cluster and surface.

• Journal of the Korean Society of Clothing and Textiles
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• v.45 no.2
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• pp.376-389
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• 2021

This study investigates the effects of the interplay of device types and the need for touch (NFT) on product attitudes and determines how the mental simulation of touch mediates such relationships. Specifically, we test the roles of instrumental and autotelic NFT in the moderated mediation effect of mental simulation of touch. We instructed the potential participants to shop for a leather jacket on a webpage. With a total of 152 data points from the responses of participants who used a laptop and a touch device that uses a direct-touch interface (e.g., tablets), we conducted descriptive statistics, analysis of variance, and PROCESS procedures using SPSS 20.0. The results show a greater mental simulation for touch when using a touch device than a laptop. When individuals' instrumental NFT is low, using a touch device while shopping online heightens mental simulation of touch, which impacts product attitudes. In particular, such a moderated mediation effect strengthens as the value of individuals' autotelic NFT increases. However, when individuals' instrumental NFT is high, a touch device cannot drive mental simulation for touch, increasing favorable attitudes toward the product.

• Journal of the Korean Ceramic Society
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• v.43 no.12 s.295
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• pp.829-832
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• 2006

In this study, the influence of the magnetic field on ferrite slurry's injection time during the slurry forming process was investigated. The evaluation system of the slurry's injection time under the strong magnetic field was designed with FEM and manufactured. Studied parameters were the applied magnetic field, the input pressure of the slurry, and the supplying tube materials. As the results, the injection time was increased with the external magnetic field strength and rapidly decreased with increasing the input pressure of the slurry. Also the injection time was decreased when the supplying tube was manufactured with the magnetic material having the higher magnetic permeability than the ferrite.

• Journal of IKEEE
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• v.7 no.1 s.12
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• pp.1-8
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• 2003

In this study, the high performance BCD device structure which satisfies the high voltage and fast switching speed characteristics is devised. Through the process and device simulation, optimal process spec. & device spec. are designed. We adapt double buried layer structure, trench isolation process, n-/p-drift region formation and shallow junction technology to optimize an electrical property as mentioned above. This I.C consists of 20V level high voltage bipolar npn/pnp device, 60V level LDMOS device, a few Ampere level VDMOS, 20V level CMOS device and 5V level logic CMOS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.210-215
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• 1994

In the CMOS device, Counter doping is needed to adjust threshold voltage because of the difference between n-MOSFET and p-MOSFET well doping concentration when n+ polysilicon gate is used. Therefore buried channel is formed in the p-channel MOSFET degrading properties. So well doping concentration and doping condition should be considered in fabrication process and device design. Here we are to extract the initial process condition using simulation and fabricate p-MOSFET device and then compare the subthreshold characteristics of simulated and fabricated device.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.1-9
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• 1999

This paper presents a newly enhanced damage model in Monte Carlo (MC) simulation for the accurate prediction of 3-Dimensional (3D) as-implanted impurity and point defect profiles induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P and Si self implant over the wide energy range has been proposed for the ULSI device technology and development. Our model shows very good agreement with the SIMS data over the wide energy range. In the damage accumulation, we considered the self-annealing effects by introducing our proposed non-linear recomvination probability function of each point defect for the computational efficiency. For the damage profiles, we compared the published RBS/channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreement with the experiments for phosphorus implants.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.39-42
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• 2006

There are various analysis functions(including prediction of path loss, analyzing of capacity and coverage, etc.) of simulation tool to design and optimize the mobile communication network. Its reliability absolutely effects the performance of mobile communication network. Especially as the wireless network highly advancing focused on data service, it more needs to research and develop on the standard establishment of reliability of the simulation tool. Also it is important the systematic research how to improve the reliability of simulation tool. In this paper, to give the concrete process and skill about how to improve reliability, we define the kinds of reliability at first. And then we explain the comparison results between real field measurement data and theoretic simulation data.

• Journal of Korea Game Society
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• v.13 no.4
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• pp.35-46
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• 2013

In this paper, we show a real-time lightning simulation for smart device game. Our proposed method uses physically based Dielectric Breakdown Model to similar real world lightning path and we simplify the algorithm for real-time simulation in smart device. In addition, the rendering process can render multiple lightning and can real-time render in smart device. Finally, our lightning can support interactive with user. The simulation method will be effectively useful for a game that needs a real-time simulation as its game element in smart device environment.