• 대한기계학회논문집B
• /
• 제21권5호
• /
• pp.637-649
• /
• 1997

Effects of cone angle, pressure-hole orientation and Reynolds number on the five-hole probe calibration have been investigated for eight large-scale conical five-hole probes, which have either perpendicular pressure holes or forward-facing pressure holes for the cone angles of 45 deg, 60 deg, 75 deg and 90.deg. Pitch and yaw angles are changed from -40 deg to +40 deg with an interval of 5 deg, respectively, when the probe Reynolds numbers are 1.77*10$^{4}$, 3.53*10$^{4}$ and 7.06*10$^{4}$. The result shows that larger cone angle results in more sensitive changes in the calibration coefficients. In the case that the cone angle is 45 deg, the pitch-angle and yaw-angle coefficients of the five-hole probe with the perpendicular pressure holes show a very different trend compared with those of the five-hole probe with the forward-facing pressure holes. On the other hand, when the cone angle is more than 60 deg, each calibration coefficient is nearly independent of the pressure-hole orientation. Additionally, the effects of the Reynolds number on the calibration coefficients are also reported in detail.

• 대한기계학회논문집B
• /
• 제27권9호
• /
• pp.1248-1255
• /
• 2003

Pressure coefficient in a rotating discharge hole was measured to gain insight into the influence of rotation on the discharge characteristics of rotating discharge holes. Pressures inside the hole were measured by a telemetry system that had been developed by the authors. The telemetry system is characterized by the diversity of applicable sensor type. In the present study, the telemetry system was modified to measure static pressure using piezoresistive pressure sensors. The pressure sensor is affected by centrifugal force and change of orientation relative to the gravity. The orientation of sensor installation for minimum rotating effect and zero gravity effect was found out from the test. Pressure coefficients in a rotating discharge hole were measured in longitudinal direction as well as circumferential direction at various rotating speeds and three different pressure ratios. From the results, the behaviors of pressure coefficient that cannot be observed by a non-rotating setup were presented. It was also shown that the discharge characteristics of rotating discharge hole is much more influenced by the Rotation number irrespective of pressure ratio.

• 한국전기전자재료학회논문지
• /
• 제15권3호
• /
• pp.214-219
• /
• 2002

In order to elucidate the crystallographic orientation dependence of electrical properties of carbon (C)-doped GaAs epilayers, C incorporation into GaAs epilayers on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A has been performed by a low pressure metalorganic chemical vapor deposition using C tetrabromide ($CBt_4$) as a C source. The hole concentration of C-doped GaAs epilayers rapidly decreases with a hump at (311)A with increasing the offset angle. Although the growth temperature and the V/III ratio are varied, the crystallographic orientation dependence of hole concentration show a same trend. The above behaviors indicate that the bonding strength of As sites on a glowing surface plays an important role in the C incorporation into the high-index GaAs substrates.

• 대한기계학회논문집B
• /
• 제21권2호
• /
• pp.329-340
• /
• 1997

A passive control of interaction of condensation shock wave / boundary layer for reducing the strength of condensation shock was conducted experimentally in a 2.5 * 8 cm$^{2}$ indraft type supersonic wind tunnel. The effects of following factors on passive control were investigated: 1) the thickness of porous wall, 2) the diameter of porous hole, and 3) the orientation of porous hole. On the other hand, the location of nonequilibrium condensation region and condensation shock wave was controlled by regulation of the stagnation conditions. Surface static pressure measurements as well as Schlieren observations of the flow field were obtained, and their effects were compared with the results the cases of without passive control. It was found that thinner porous wall, smaller porous hole and FFH orientation for the same cavity size and porosity of 12% are more favourable than the cases of its opposite.

• 한국재료학회지
• /
• 제13권11호
• /
• pp.717-720
• /
• 2003

Heavily $p^{ ＋}$-typed ($10^{20}$ $cm^{-3}$ ) GaAs epilayers have been grown on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A by a low-pressure metalorganic chemical vapor deposition. Carbon (C) tetrabromide (CBr$_4$) was used as a C source. At moderate growth temperatures and high V/III ratios, the hole concentration of C-doped GaAs epilayers shows the crystallographic orientation dependence. The bonding strength of As sites on a growing surface plays an important role in the C incorporation into the high-index GaAs substrates.

• 지질공학
• /
• 제27권3호
• /
• pp.233-244
• /
• 2017

주입액의 점성도와 응력상태에 따른 균열전파 특성을 분석하기 위해 실험실 규모의 수압파쇄시험을 실시하였다. 시험에 사용된 시료는 시멘트 몰탈을 사용하여 제작되었으며, 각 변의 길이가 20 cm인 정육면체 형태이다. 제작된 시료는 최대강도를 갖기 위해 수중에서 약 1달간 양생과정을 거쳤다. 독립적인 가압시스템을 가지고 있는 진삼축압축장치로 시료에 압력을 가하여, 실제의 지반에서 작용하는 원위치응력 상태를 재현하였다. 시추 환경 재현을 위해 시료에 소형 시추공을 천공한 후, 일정한 주입속도로 수압파쇄시험을 실시하였다. 수압파쇄시험 과정에서 시추공에 주입된 유체의 압력을 실시간으로 측정하였으며, 동시에 미소파괴음(AE) 신호를 측정하였다. 수압파쇄시험의 모든 과정이 끝난 후 생성된 균열의 형태를 육안으로 관찰하였다. 일차파쇄압력은 주입액의 점성도 증가에 따라 지수형태를 보이며 증가하였다. 수압파쇄시험으로 인해 생성된 균열의 형태는 최대주응력과 최소주응력의 차이인 편차응력의 크기에 따라 서로 다른 양상을 보였다. 낮은 편차응력의 조건에서는 단일의 균열이 아닌 다중 균열이 생성되거나, 균열 성장과정에서 방향이 휘어지는 경향을 보였고, 이에 반해 높은 편차응력의 조건에서 생성된 균열은 단일 면상의 균열이 발생하였다. AE 분석에서도 편차응력이 클수록 미세균열이 단일 면상으로 집중되어 발생되는 경향을 보였다. 이러한 연구결과는 수압파쇄 방법을 이용한 암반파쇄에서 편차응력이 클 때보다 작을 때 더 복잡한 균열이 발생된다는 것을 보여준다. 따라서 셰일가스를 개발할 때 생산량을 높이기 위해서는 복잡한 균열을 발생시킬 수 있는 편차응력이 작은 조건에서 수압파쇄가 적용되는 것이 효과적일 것으로 판단된다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
• /
• pp.79-79
• /
• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.