• 유변학
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• 제11권2호
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• pp.153-158
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• 1999

가스사출시 두개이상의 가스흐름가능방향이 존재 할 때 가스는 선택적인 방향으로 흐르게는데 여기에서는 이 가스흐름 방향을 예측하는 방법을 제시하였다. 지금까지는 가스흐름방향은 가스의 하류에 있는 수지의 저항값, 즉 압력손실필요량을 비교하여 예측되어 왔는데 이방법은 대부분의 경우에 정확한 예측력을 가지고 있었다. 그러나 수지의 저항값 또는 압력손실필요량을 비교하는 방법이 실제에는 경우에따라 맞지 아니하였다. 이 연구에서는 수지속도비교가 압력손실필요량비교 보다 한단계위의 판단기준(criterion)이 되는 것을 설명하고 그예를 들어 증명 하고 있다. 압력손실필요량비교 대신 수지속도비교방법을 쓰면 예외없이 모든 경우 정확하게 가스흐름방향을 예측을 할수 있다.

• 한국표면공학회지
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• 제29권5호
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• pp.399-406
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• 1996

The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-oriented grains to the less strained (111)-oriented grains occurred as the film thickness was increased. As the sputtering power was increased, the cross-over thickness, at which the growth orientation changes from the <002> to the <111> direction, was decreased. The addition of $N_2$ besides Ar as sputtering gas suppressed the cross-over, and consequently resulted in the (002) preferred orientation without exhibiting the cross-over. We attribute the observed cross-over phenomena to the competition between the surface and the strain energy. The x-ray powder diffraction, the x-ray reflectivity, and the ex-situ AFM surface topology study consistently suggest that the microscopic growth front was in fact always the (002) planes. In the initial stage of growth, the (002) planes were aligned to the substrate surface to minimize the surface energy. At later stages, however, the (002) growth front tilted away from the surface by about $60^{\circ}$ to relax the strain, which caused the cross-over of the preferred growth direction to the <111> direction.

• 한국세라믹학회지
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• 제32권4호
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• pp.419-428
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• 1995

Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

• The Korean Journal of Ceramics
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• 제6권4호
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• pp.354-358
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• 2000

The SnO$_2$film was deposited on a corning glass 1737 substrate by plasma enhanced chemical vapor deposition using a gas mixture of SnCl$_4$, $O_2$, and Ar. The film thickness was measured using $\alpha$-step and was about 9400$\AA$. The conventional X-ray diffractometry and pole figure attachment were used to refine the crystal structure of SnO$_2$ thin film. Six pole figures, (200), (211), (310), (301), (321), and (411), were measured with CoK$_\alpha$ radiation in reflection geometry. The X-ray diffraction data were measured at room temperature using CuK$_\alpha$ radiation with graphite monochromator. The agreement between calculated and observed patterns for the normal direction of SnO$_2$ thin film was not satisfactory due to the severely preferred orientation effect. The Rietveld refinement of heavily textured SnO$_2$ thin film was successfully achieved by adopting the pole density distribution of each reflection obtained from the inverse pole figure as a correction factor for the preferred orientation effect. The R-weighted pattern, R$_wp$, was 15.30%.

• 센서학회지
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• 제19권5호
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• pp.385-390
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• 2010

CO sensing thick film gas sensors using $Co_3O_4$ powders prepared by hydrothermal reaction method, were fabricated, and their structural, electrical and CO gas sensing properties were investigated. The specific surface area of the $Co_3O_4$ powders obtained from BET analysis was about 79.0 $m^2/g$. XRD and SEM results show that the thick films heat-treated at $500^{\circ}C$ for 30 min after screen printing had the preferred orientation of (311) direction and the crystalline size was calculated to 221 $\AA$. The maximum activation energy obtained from the temperature-resistance characteristics was 3.11 eV in the temperature range of $290^{\circ}C$ to $310^{\circ}C$. The sensitivity to 1,000 ppm CO was about 150 %. The specific surface area, crystalline size, and maximum activation energy were increased significantly and the sensitivity for CO gas was improved largely.

• 한국분말재료학회지
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• 제24권2호
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• pp.115-121
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• 2017

In this work, p-type Bi-Sb-Te alloys powders are prepared using gas atomization, a mass production powder preparation method involving rapid solidification. To study the effect of the sintering temperature on the microstructure and thermoelectric properties, gas-atomized powders are consolidated at different temperatures (623, 703, and 743 K) using spark plasma sintering. The crystal structures of the gas-atomized powders and sintered bulks are identified using an X-ray diffraction technique. Texture analysis by electron backscatter diffraction reveals that the grains are randomly oriented in the entire matrix, and no preferred orientation in any unique direction is observed. The hardness values decrease with increasing sintering temperature owing to a decrease in grain size. The conductivity increases gradually with increasing sintering temperature, whereas the Seebeck coefficient decreases owing to increases in the carrier mobility with grain size. The lowest thermal conductivity is obtained for the bulk sintered at a low temperature (603 K), mainly because of its fine-grained microstructure. A peak ZT of 1.06 is achieved for the sample sintered at 703 K owing to its moderate electrical conductivity and sustainable thermal conductivity.

• 한국기후변화학회지
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• 제8권4호
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• pp.377-384
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• 2017

Amid growing concerns about energy security, energy prices, economic competitiveness, and climate change, district heating (DH) system has been recognized for its significant benefits and the part it can play in efficiently meeting society's growing energy demands while reducing environmental impacts. Policy makers often need to quantify the fuel and carbon dioxide ($CO_2$) emissions savings of DH system compared to conventional individual heating (IH) system in order to estimate its actual emissions reductions. The objective of this paper is to calculate energy efficiency and $CO_2$ emissions saving, and to propose the future direction for DH system in Korea. DH system achieved total system efficiencies of 67.9% compared to 54.1% for IH system in 2015. DH system reduced $CO_2$ emissions by $381,311ton-CO_2$ (4.1%) compared to IH system. The results suggest that DH system is more preferred than IH system using natural gas. In Korea, the aim is to reduce dependence on fossil fuels and to use energy more efficiently. DH system have significant potential with regard to achieving this aim, because DH system are already integrated with power generation in the electricity since combined heating and power (CHP) are used for heat supply. Although the future conditions for DH may look promising, the current DH system in Korea must be enhanced in order to handle future competition. Thus, the next DH system must be integrated with multiple renewable energy and waste heat energy sources.

• 반도체디스플레이기술학회지
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• 제8권1호
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• pp.33-38
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• 2009

We have investigated the effect of the ambient gases on the characteristics of AZO thin films for the OLED (organic light emitting diodes) devices. These AZO thin films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at 300. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.2sccm to 1sccm and from 0.5sccm to 5sccm, respectively. The AZO thin films were preferred oriented to (002) direction regardless of ambient gases. The electrical resistivity of AZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while under Ar+$H_2$ atmosphere the electrical resistivity showed minimum value near 1sccm of $H_2$. All the films showed the average transmittance over 80% in the visible range. The OLED device was fabricated with different AZO substrates made by configuration of AZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of AZO substrate.

• 한국진공학회지
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• 제4권S2호
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• pp.64-68
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• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.

• 한국표면공학회지
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• 제42권3호
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• pp.122-127
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• 2009

Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO ($Al_2O_3$:2.0 wt%) target and GZO ($Ga_2O_3$:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity $1.95{\times}10^{-3}{\Omega}cm$ was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of $7.47{\times}10^{-4}{\Omega}cm$ at below $300^{\circ}C$. Furthermore, when 0.05% $H_2$ gas was introduced, resistivity of GAZO film decreased to $6.69{\times}10^{-4}{\Omega}cm$. All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.