• 태양에너지
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• 제19권3호
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• pp.125-131
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A grain boundary(GB) of poly-Si acts as potential barrier and recombination center for photo-generated carriers. To reduce unwanted side effects at the GB of poly-Si, we employed physical GB removal of poly-Si using chemical solutions. Various chemical etchants such as Sirtl, Yang, Secco, and Schimmel were investigated for the preferential GB etching. Etch depth about 10 ${\mu}m$ was achieved by a Schimmel etchant. After a chemical etching of poly-Si, we used $POCl_3$ for emitter junction formation. This paper used an easy method of top electrode formation using a RF sputter grown ITO film. ITO films with thickness of 300 nm showed resistivity of $1.26{\times}10^{-4}{\Omega}-cm$ and overall transmittance above 80%. Using a preferential GB etching and ITO top electrode, we developed a new fabrication procedure of poly-Si solar cells. Employing optimized process conditions, we were able to achieve conversion efficiency as high as 16.6% at an input power of 20 $mW/cm^2$. This paper investigates the effects of process parameters: etching conditions, ITO deposition factors, and emitter doping densities in a poly-Si cell fabrication procedure.

• Bulletin of the Korean Chemical Society
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• 제33권3호
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• pp.1078-1080
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• 2012

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.597-600
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• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1430-1432
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. To reduce these effects of the grain boundaries, we investigated various influencing factors such as preferential chemical etching of grain boundaries, grid design, transparent conductive thin film, and top metallization along grain boundaries. Pretreatment in $N_2$ atmosphere and gettering by $POCl_3$ and Al were performed to obtain polycrystalline silicon of the reduced defect density. Structural, electrical, and optical properties of solar cells were characterized. Improved conversion efficiencies of solar cell were obtained by a combination of Al diffusion into grain boundaries on rear side, fine grid finger, top Yb metal grid on Cr thin film of $200{\AA}$ and buried contact metallization along grain boundaries.

• 열처리공학회지
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• 제13권5호
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• pp.318-323
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• 2000

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

• 마이크로전자및패키징학회지
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• 제16권3호
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• pp.61-65
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• 2009

단결정 실리콘 웨이퍼 위에 그라인딩 공정을 사용하여 인위적으로 결정학적 결함을 만들고 선택적 습식 식각 공정을 통하여 반사율을 저감시켜 태양전지에 적용할 수 있는 새로운 표면 조직을 형성하였다. 식각 용액의 농도와 식각 시간에 따른 표면 형태의 변화를 분석하고 그에 따른 표면의 광학적 반사율의 변화를 측정하였다. 결정학적 결함 분석과 표면 형태의 관찰은 각각 투과전자 현미경과 주사전자현미경을 이용하였고 광학적 특성은 spectrophotometer를 이용하여 분석하였다. 상기 방법에 의한 최적화된 실리콘 표면의 반사율은 평균 1%이하의 우수한 결과를 보였으며 짧은 공정시간 및 가격효율성 면에서 효과적인 제조 방법이라고 사료된다.

• Restorative Dentistry and Endodontics
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• 제9권1호
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• pp.115-119
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• 1983

The purpose of this study was to compare the solubility of enamel and dentin to an etchant after fluoride application. Specimens were collected from extracted anterior and bicuspid and each tooth was cut into several pieces. These specimen were allocated in 7 group; 1%, 2%, 3% NaF, 1%, 8%, 20% $SnF_2$, and control group. Five specimens in each group was exposed to pre-determined fluoride solution for 3 minutes, and washed with running water. These specimens were etched by Hipol (commercial label) etchant for 30 seconds. Following are the findings obtained through S.E.M. 1. All specimens with acid etching revealed preferential removal of prism periphery leaving prism core. 2. Specimens treated with 1%, 2% NaF solution showed that the shape of prism tip was thin and sharp like a needle. The case of 3% NaF showed rather round shape at prism end. 3.1% of $SnF_2$ case showed similar findings with the control group but 8% and 20% $SnF_2$ case revealed needle shape at the prism and was less clear than NaF case. Preferential removal of prism periphery was partialy observed and un decalcified area is fused to prism forming reidge. 4. Dentine treated by fluoride compound in low concentration showed the orifice of dentinal tubule was clearly enlarged whereas in high concentration the orifice was not widened.

• 대한소아치과학회지
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• 제10권1호
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• pp.85-93
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• 1983

In one group that tested for the effects of grinding and etching on the deciduous teeth, S.E.M. examination on the ground or unground labial surface of deciduous maxillary central incisors were made after etching procedure with 40% phosphoric acid for 60 secs., 120 secs., 180 sees. each. In another group that tested for the degree of resin penetration to the ground and etched deciduous teeth, composite resin application was done to the ground deciduous maxillary central incisors that had been acid-etched for 30 secs., 60 secs., 90 sees., 120 sees., 180 secs. each. The tooth-resin specimens were cut at the middle 1/3 of the crown by 2mm thickness, and the adjacent tooth materials were demineralized by 10% hydrochloric acid, the author observed the tags of the resin replica with S.E.M.. Following results were obtained. 1. After 40% phosphoric acid etching, the unground deciduous enamel surface showed various types of etching pattern. 2. For the formation of regular micropores on deciduous enamel surface by acid etching with 40% phosphoric acid, the time over 120 secs. should be requested. 3. After 40% phosphoric acid etching, the ground deciduous enamel surface showed the same etching pattern that has been a preferential removal of prism peripheries despite different etching time. 4. On the ground group that etched over 60 secs. to 180 secs., the length of tags was $5{\mu}m$ to $8{\mu}m$, with a mean of $7{\mu}m$.

• Restorative Dentistry and Endodontics
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• 제6권1호
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• pp.37-50
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• 1980

Scanning Electron Microscopic (SEM) examination on the labial surface of 91 permanent upper incisors were made after etching procedure with phosphoric acid, sulfuric acid, nitric acid, hydro chloric acid, oxalic acid, formic acid, citric acid and zinc phosphate liquid for 2 minutes. Following results were obtained. 1. In the surfaces etched by 10%. 50% phosphoric acid, 50% sulfuric acid, 10%. 30% nitric acid, 10%. 50% oxalic acid, 10%. 30%. 50% formic acid, 30%. 50% citric acid and zinc phosphate liquid, there appeared to be a preferential removal of prism cores, but in the surfaces etched by 10% phosphoric acid, 50% nitric acid, 10%. 30% hydrochloric acid and 30% oxalic acid, the prism peripheries were removed preferentially. 2. According to Silverstone classification on enamel etching pattern the surface treated by zinc phosphate liquid, 30. 50% citric acid, 10%. 30%. 50% formic acid, 10%. 50% oxalic acid, 10%. 30% nitric acid, 50% sulfuric acid and 10%. 50%. phosphoric acid showed Type 1, and etched by 30% oxalic acid, 10%. 30% hydrochloric acid, 50% nitric acid and 10% phosphoric acid showed Type II. Etching of prism cores was by far the most common occurence. The changes produced could be related to intrinsic differences in histology and / or solubility of enamel.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1738-1740
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A solar cell conversion efficiency was degraded by grain boundary effect in Polycrystalline silicon. To reduce grain boundary effect, we performed a preferential grain boundary etching, $POCl_3$ n-type emitter doping, and then ITO film growth on poly-Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth about $10{\mu}m$. RF magnetron sputter grown ITO films showed a low resistivity of $10^{-4}\Omega-cm$ and high transmittance of 85%. With well fabricated poly-Si solar cells. we were able to achieve as high as 15% conversion efficiency at the input power of 20mW/$cm^2$.