• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.240-243
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• 1999

This paper presents a data-dependent precharge suppression(DPS) D-flip-flop(DFF) with precharge suppression scheme according to data-transition probability The main feature of the DPS DFF is that precharge is suppressed when there is no data transition. The proposed DPS DFF consumes less power than the conventional Yuan-Svensson's true single phase clocking(TSPC) DFF when the data-transition probability is low. The simulation result shows that the power consumption is reduced by 42.2 % when the data-transition probability is 30%.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.699-702
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• 1998

This paper presents a 500MHz 1.1㎱ 32kb synchronous CMOS SRAM macro using $0.35\mu\textrm{m}$ CMOS technology. In order to operate at high frequency and reduce power dissipation, the designed SRAM macro is realized with optimized decoder, multi-point sense amplifier(MPSA), selective precharge scheme and etc. Optimized decorder and MPSA respectively reduce 50% and 40% of delay time. Also, a selective precharge scheme reduces 80% of power dissipation in that part.

• Journal of Korean Society for Atmospheric Environment
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• v.15 no.4
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• pp.463-473
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• 1999

The main purpose of this study is to investigate the characteristics of precharge electro-cyclone compared to those of innercharge electro-cyclone, experimentally. Especially, the experiment is executed focusing on the improvement of collection efficiency with the charging types including the experimental parameters such as the discharge electrode shapes, applied voltages and gas inlet velocities. Results show that the overall collection efficiency of precharge electro-cyclone is increased over 20% than that of the innercharge type for the same discharge electrode(ø 4 mm, screw rod) in the inlet velocity of 4 m/s, and applied voltage of 30kV. Moreover, the pressure drop of precharge type becomes 10% lower than that of the innercharge type for the inlet velocity of 12 m/s owing to the disturbance of inner vortex flow by the discharge electrode equipped in the center region of cyclone body.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.583-584
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• 2008

This paper presents a low-power and high-speed pulsed flip-flop based on dual-precharging and conditional discharging. The dual-precharging operation minimizes the parasitic capacitance of each precharge node, resulting in high-speed operation. The conditional-discharging operation minimizes the redundant transitions of precharge nodes, resulting in low-power operation. Linear feedback shift register (LFSR) designed in a $0.18{\mu}m$ CMOS technology using the proposed flip-flop achieves 32% power reduction as compared to conventional design.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1555-1557
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• 2002

We have investigated the precharge type sense amplifier, it is suitable fur voltage sensing in a NOR type single transistor ferroelectric field effect transistor (1T FeFET) memory read operation. The proposed precharge type sense amplifier senses the bit line voltage of 1T FeFET memory. Therefore, the reference celt is not necessary compared to current sensing in 1T FeFET memory, The high noise margin is wider than the low noise margin in the first inverter because requires tile output of precharge type sense amplifier high sensitivity to transition of input signal. The precharge type sense amplifier has very simple structure and can sense the bit line signal of the 1T FeFET memory cell at low voltage.

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.742-744
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• 1999

In this paper, a new precharge type PFD for fast locking time of PLL is suggested. It is realized by inserting NMOS transistor and inverter into the precharge part of PFD for isolating the reset of the Up signal from the feedback signal. The new precharge type PFD generates the Up signal while the feedback signal is fixed at a high level. Therefore the new PFD output is increased than the conventional precharge type PFD output. As a result of the increased PFD output, fast locking of PLLs is achieved. Additionally, with control the falling time of the inverter, the dead-zone is reduced and the jitter characteristics are improved. The whole characteristics of PFD and PLL are simulated by using HSPICE. Simulation results show that the dead-zone is 20ps and the locking time of PLL using the new PFD is 38ns at the 350MHz frequency of referecne signal. This value is quite small compared with conventional PFD.

• Proceedings of the KIEE Conference
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• 2000.07d
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• pp.3088-3090
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• 2000

In this paper, we introduce a charge pump PLL architecture which employs precharge phase frequency detector(PFD) and sequential PFD to achieve high frequency operation and fast acquisition. Operation frequency is increased by using precharge PFD when the phase difference is within -${\pi}\;{\sim}\;{\pi}$ and acquisition time is shortened by using sequential PFD and increased charge pump current when the phase difference is larger than |${\pi}$|. SO error detection range of proposed PLL structure is not limited to -${\pi}\;{\sim}\;{\pi}$. By virtue of this multi-phase frequency detector structure, the maximum operating frequency of 423MHz at 2.5V and faster acquisition were achieved by simulation.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.5
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• pp.769-776
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• 2023

In this paper, we designed an MLSA(Match-line Sense Amplifier) for low-power CAM(Content Addressable Memory). By using the MLSA and precharge controller, we reduced power consumption during CAM operation by employing a selective match-line charging technique to mitigate power consumption caused by mismatch. Additionally, we further reduced power consumption due to leakage current by terminating precharge early when a mismatch occurs during the search operation. The designed circuit exhibited superior performance compared to the existing circuits, with a reduction of 6.92% and 23.30% in power consumption and propagation delay time, respectively. Moreover, it demonstrated a significant decrease of 29.92% and 52.31% in product-delay-product (PDP) and energy-delay-product (EDP). The proposed circuit was validated using SPECTRE simulation with TSMC 65nm CMOS process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.45-53
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• 2003

This paper describes a Unified Voltage Generator that merges the pumping capacitors of boosted voltage generator (VPP) and substrate voltage generator (VBB) for DRAM. This unified voltage generator simultaneously supplies VPP and VBB voltages by using one pumping capacitor and one oscillator. The proposed generator is realized by 0.14${\mu}{\textrm}{m}$DRAM process. The generator reduces the power consumption to 30%, the area of total generator to 40% and the area of pumping capacitor to 29.6%, and improves the pumping efficiency to 13.2% at 2.0V supply voltage. In addition, the generator adopts the charge recycling technique for precharging the pumping capacitor during the period of precharge, thatcan reduces the precharge current to 75%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.271-274
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• 2001

In this paper, we propose a charge pump phase-locked loop (PLL) with multi-PFD which is composed of a sequential phase frequency detector(PFD) and a precharge PFD. When the Phase difference is within - $\pi$ ∼ $\pi$ , operation frequency can be increased by using precharge PFD. When the phase difference is larger than │ $\pi$ │, acquisition time can be shorten by the additional control circuit with increased charge pump current. Therefore a high frequency operation, a fast acquisition and an unlimited error detection range can be achieved.