• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.394-394
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• 2013

The spin-orbit interaction has received great attention in the field of spintronics, because of its property and applicability. For instance, the spin-orbit interaction induces spin precession which is the key element of spin transistor proposed by Datta and Das, since frequency of precession can be controlled by electric field. The spin-orbit interaction is classified according to its origin, Dresselhaus and Rashba spin-orbit interaction. In particular, the Rashba spin-orbit interaction is induced by inversion asymmetry of quantum well structure and the slope of conduction band represents the strength of Rashba spin-orbit interaction. The strength of spin-orbit interaction is experimentally obtained from the Shubnikov de Hass (SdH) oscillation. The SdH oscillation is resistance change of channel for perpendicular magnetic field as a result of Zeeman spin splitting of Landau level, quantization of cyclotron motion by applied magnetic field. The frequency of oscillation is different for spin up and down due to the Rashba spin-orbit interaction. Consequently, the SdH oscillation shows the beat patterns. In many research studies, the spin-orbit interaction was treated as a tool for electrical manipulation of spin. On the other hands, it can be considered that the Rashba field, effective magnetic field induced by Rashba effect, may interact with external magnetic field. In order to investigate this issue, we utilized InAs quantum well layer, sandwiched by InGaAs/InAlAs as cladding layer. Then, the SdH oscillation was observed with tilted magnetic field in y-z plane. The y-component (longitudinal term) of applied magnetic field will interact with the Rashba field and the z-component (perpendicular term) will induce the Zeeman effect. As a result, the strength of spin-orbit interaction was increased (decreased), when applied magnetic field is parallel (anti-parallel) to the Rashba field. We found a possibility to control the spin precession with magnetic field.

• Journal of Mechanical Science and Technology
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• 제20권12호
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• pp.2209-2217
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• 2006

Dynamic flow characteristics of a counter-flow vortex tube is investigated using hot-wire and piezoelectric transducer (PZT) measurements. The experimental study is conducted over a range of cold air outlet ratios (Y=0.3, 0.5, 0.7, and 1.0) and inlet pressure 0.15 MPa. Temperatures are measured at the cold air outlet and along the vortex tube wall. Hot-wire is located at cold outlet and PZT is installed at inner vortex tube by mounting at throttle valve. The cold outlet temperature results show that the swirl flow of vortex tube is not axisymmetric. The hot-wire and PZT results show that there exist two distinct kinds of frequency, low frequency periodic fluctuations and high frequency periodic fluctuations. It is found that the low frequency fluctuation is consistent with the Helmholtz frequency and the high frequency fluctuation is strongly related with precession oscillation.

• International Journal of Fluid Machinery and Systems
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• 제3권1호
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• pp.80-90
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• 2010

The cavity oscillation with swirling flow in hydraulic power generating systems was studied by a simple experiment and numerical simulation. Several types of fluctuation were observed in the experiment, including the cavitation surge caused by the diffuser effect and the vortex precession by the swirling flow. Both cavitation surge and vortex precession were simulated by CFD. Detailed flow structure was examined through flow visualization and CFD.

• 천문학논총
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• 제30권2호
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• pp.587-589
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• 2015

We present the results from analysis of the Hilbert-Huang transform (HHT) for the 4 Hz quasi-periodic oscillations (QPO) around the black hole X-ray binary XTE J1550-564. The resultant Hilbert spectra demonstrate that the QPO is composed of a series of intermittent signals appearing occasionally. From the analysis of the HHT, we further found the distribution of the lifetimes for the intermittent oscillations and the distribution for the time intervals with no significant signal (the break time). The mean lifetime is 1.45 s and 90% of the oscillation segments have lifetimes less than 3.1 s whereas the mean break time is 0.42 s and 90% of break times are less than 0.73 s. We conclude that the intermittent feature of the QPO could be explained by the Lense-Thirring precession model and rules out interpretations of continual frequency modulation.

• Journal of Magnetics
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• 제14권1호
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• pp.23-26
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• 2009

Spin injection from a ferromagnet into an n-doped $In_{0.53}Ga_{0.47}As$ channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of $2\;{\mu}V$ and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.382-383
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• 2013

Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of $1.71{\times}10^{11}$ eVm and effective mass of 0.98 $m^0$ are obtained at T=1.8 K, respectively. Fig. 2 shows the gate dependence of the spin-orbit interaction parameter and the hole concentration at 1.8 K, which indicates the spin-orbit interaction parameter increases with the carrier concentration in p-type channel. On the order hand, opposite gate dependence was found in n-type channel [1,2]. Therefore, the combined device of p- and n-type channel spin transistor would be a good candidate for the complimentary logic device.