• Journal of Power Electronics
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• v.16 no.2
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• pp.798-804
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• 2016

This paper proposes a new operation and control strategy for Power-Assisted Wheelchairs (PAW) using one brushless DC (BLDC) motor. The conventional electrical wheelchairs are too heavy and large for one person to move because they have two electric motor wheels. On the other hand, the proposed PAW system has a small volume and is easy to move due to the presence of a single wheel motor. Unlike the conventional electric wheelchairs, this structure for a PAW does not have a control joystick to reduce its weight and volume. To control the wheelchair without a joystick, a special control system and algorithm are needed for proper operation of the wheelchair. In the proposed PAW system uses only one sensor to detect the acceleration and direction of PAW's movement. By using this sensor, speed control can be achieved. With a speed control system, there are three kinds of operations that can be done on the speed of a PAW: the increment of PAW speed by summing external force, the decrement of PAW speed by subtracting external force, and emergency breaking by evaluating the time duration of external force. The validity of the proposed algorithm is verified through experimental results.

• Journal of Power Electronics
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• v.2 no.4
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• pp.288-296
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• 2002

In this paper, a high frequency transformer - assisted auxiliary active resonant commutated snubber (HFTA-ARCS) for voltage source soft switching pulse width modulated power conversion circuits is presented. A three phase voltage source type soft switching inverter incorporating HFTA-ARCS circuits in its three bridge legs can reduce current rating of auxiliary active power switches and has sensorless simplified control scheme which any specified boost current management is not required for soft switching. Its operation principle and digital control scheme are described and a practical design method of circuit parameters on this HFTA-ARCS circuit is also introduced on the basis of computer simulation. Moreover, this space voltage vector modulated soft switching inverter system with DSP-based digital control scheme Is discussed and its effectiveness is proved on the basis of performance evaluations. The operating performances of this inverter system are also compared with those of conventional three-phase hard switching inverter under practical conditions of specified parameters.

• Journal of Power Electronics
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• v.7 no.3
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• pp.181-190
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• 2007

This paper presents a novel circuit topology of a DC bus line series switch and parallel snubbing capacitor-assisted soft-switching PWM full-bridge inverter type DC-DC power converter with a high frequency planar transformer link, which is newly developed for high performance arc welding machines in industry. The proposed DC-DC power converter circuit is based upon a voltage source-fed H type full-bridge soft-switching PWM inverter with a high frequency transformer. This DC-DC power converter has a single power semiconductor switching device in series with an input DC low side rail and loss less snubbing capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge arms and DC bus line can achieve ZCS turn-on and ZVS turn-off transition commutation. Consequently, the total switching power losses occurred at turn-off switching transition of these power semiconductor devices; IGBTs can be reduced even in higher switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules can be realized at 60 kHz. It is proved experimentally by power loss analysis that the more the switching frequency increases, the more the proposed DC-DC power converter can achieve a higher control response performance and size miniaturization. The practical and inherent effectiveness of the new DC-DC converter topology proposed here is actually confirmed for low voltage and large current DC-DC power supplies (32V, 300A) for TIG arc welding applications in industry.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.2
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• pp.322-329
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• 2009

Machinability of LAM(Laser Assisted Machining) has been studied for ceramics such as $Al_2O_3$, $Si_3_N4$ and $ZrO_2$ by $CO_2$ laser. It was possible to remove ceramics by PCBN tool because material became softening and deterioration by local laser beam irradiation. The advantage of LAM is the ability to produce larger material removal rates and tool life. But, for cutting of $Al_2O_3$ and $ZrO_2$, stage of laser power control was needed owing to thermal shock with high temperature of workpiece by laser power. And when $Si_3N_4$ was machined by LAM, $N_2$ gas spouted from surface of one cause of high temperature. Characteristics of LAM were analyzed using pyrometer, dynamometer, SEM and EDS to measure temperature of workpiece surface, cutting force, variation of machining surface and structure of lattice respectively. As the result of this study, it was found that machinability of LAM for ceramics in $CO_2$ laser and mechanism of LAM was different according to the kind of ceramics because of properties of materials.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.249-256
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• 1997

The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

• ETRI Journal
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• v.41 no.3
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• pp.396-407
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• 2019

Laser-assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single-tier LAB process for 3D through-silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A single-tier LAB process for 3D TSV integration with NCP is introduced for two different values of laser power, namely 100 W and 150 W. For the 100 W case, a maximum of three dies can be collectively stacked, whereas for the 150 W case, a total of six tiers can be simultaneously bonded. For the 100 W case, the intermetallic compound microstructure is a typical Cu-Sn phase system, whereas for the 150 W case, it is asymmetrical owing to a thermogradient across the solder joint. The collective LAB process can be realized through proper design of the bonding parameters such as laser power, time, and number of stacked dies.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.121-126
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• 1999

Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. The dependence of crystalline structure, impurity concentration, and resistivity of the Cu films deposited by SIAB on acceleration voltage are discussed.

• Women's Health Nursing
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• v.26 no.1
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• pp.72-83
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• 2020

Purpose: The purpose of this study was to investigate the effects of uncertainty and spousal support on infertility-related quality of life (QoL) in women undergoing assisted reproductive technologies. Methods: In this correlational survey study, 172 infertile women undergoing assisted reproductive technologies for infertility treatment at M hospital in Seoul participated. Data collection took place at the outpatient department of M hospital using a self-report questionnaire from July to August 2019. Data were analyzed using SPSS for Windows version 28.0. Results: The mean scores for uncertainty, spousal support, and infertility-related QoL were 28.35 (out of 50), 86.67 (out of 115), and 57.98 (out of 100), respectively. Infertility-related QoL was positively correlated with spousal support and negatively correlated with uncertainty. According to the regression analysis, infertility-related QoL was significantly affected by uncertainty, total number of assisted reproductive technology treatments, marriage duration, subjective health status, the financial burden of infertility testing, and the presence of a burdensome person. These variables had an explanatory power of 35.0% for infertility-related QoL. Conclusion: Uncertainty was an important factor influencing infertility-related QoL among women undergoing assisted reproductive technologies. It is necessary to develop and implement a nursing intervention program focused on reducing various forms of uncertainty during assisted reproductive procedures and to consider other factors affecting infertility-related QoL in the clinical setting.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.171-177
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• 2002

In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.60-60
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• 2000

The adhesion interface formation between copper and poly(ethylene terephthalate)(PET), poly(methyl methacrylate)(PMMA) and Polyimide films was treated using Ion assisted reaction system to sequential sputter deposition by High-Frequency ion source. The ion beam modification system used a new type of low power HF ion thruster for space application as new low thruster electric propulsion system. Low power HF ion thruster with diameter 100mm gives the opportunity to obtain beams of Ar+ with currents 20~150 mA (current density 0.5~3.5 mA/cm2) and energy 200~2500eV at HF power level 10~150 W. Using Ar as a working gas it is possible to obtain thrust within 3~8 mN. Contact angles for untreated films were over 95$^{\circ}$ and 80 for Pet, 10o for PMMA and 12o for PI samples as a condition of ion assisted reaction at the ion dose of 10$\times$1016 ions/cm2, the ion beam potential of 1.2 keV and 4 ml/min for environmental gas flow rate. 900o peel tests yielded values of 15 to 35 for PET, 18 to 40 and 12 to 36 g/min. respectively. High resolution X-ray photoelectron spectrocopy is the Cls region for Cu metal on these polymer substrates showed increases in C=O-O groups for polymide, whereas PET and PMMA treated samples showed only C=O groups with increase the ion dose. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PET, PMMA and PI.