• Korean Chemical Engineering Research
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• v.56 no.2
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• pp.229-239
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• 2018

The purpose of this study was to effectively produce the biosugar from cell wall of lipid extracted microalgae (LEA) by using microwave-assisted pretreatment without enzymatic hydrolysis process. Response surface methodology (RSM) was applied to optimization of microwave-assisted pretreatment conditions for the production of biosugar based on enzyme-free process from LEA. Microwave power (198~702 W), extraction time (39~241 sec), and sulfuric acid (0~1.0 mol) were used as independent variables for central composite design (CCD) in order to predict optimum pretreatment conditions. It was noted that the pretreatment variables that affect the production of glucose (C6) and xylose (C5) significantly have been identified as the microwave power and extraction time. Additionally, the increase in microwave power and time had led to an increase in biosugar production. The superimposed contour plot for maximizing dependent variables showed the maximum C6 (hexose) and C5 (pentose) yields of 92.7 and 74.5% were estimated by the predicted model under pretreatment condition of 700 w, 185.7 sec, and 0.48 mol, and the yields of C6 and C5 were confirmed as 94.2 and 71.8% by experimental validation, respectively. This study showed that microwave-assisted pretreatment under low temperature below $100^{\circ}C$ with short pretreatment time was verified to be an effective enzyme free pretreatment process for the production of biosugar from LEA compared to conventional pretreatment methods.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Journal of Surface Science and Engineering
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• v.46 no.5
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• pp.187-191
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• 2013

Niobium nitride (NbN) films were deposited on AISI 304 stainless steels by inductively coupled plasma (ICP) assisted dc magnetron sputtering method at different ICP powers, and the effects of ICP power on the phase formation, mechanical and chemical properties of the films were investigated. X-ray diffraction analysis (XRD) and field emission scanning electron microscopy (FESEM) were used to analyze the crystal structure and micro-knoop hardness was used to measure the hardness of the films. Also, 3-D mechanical profiler and a ball-on-disk wear tester were used to measure the thickness of the films and to estimate wear characteristics, respectively. The thickness of the films decreased but their hardness increased with increasing ICP power, and it was confirmed that only cubic ${\delta}$-NbN(200) remained at high ICP power. At lower ICP powers, a mixture of the hexagonal ${\delta}^{\prime}$-NbN and cubic ${\delta}$-NbN phases was obtained in the films and the hardness decreased. The corrosion potential value increased gradually with increasing ICP power, but the changes of ICP power did not significantly influence the overall corrosion resistance.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.17 no.7
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• pp.1823-1840
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• 2023

In order to improve spectral efficiency and reduce power consumption for reconfigurable intelligent surface (RIS) assisted wireless communication systems, a joint design considering irregular RIS topology, RIS on-off switch, power allocation and phase adjustment is investigated in this paper. Firstly, a multi-dimensional variable joint optimization problem is established under multiple constraints, such as the minimum data requirement and power constraints, with the goal of maximizing the system energy efficiency. However, the proposed optimization problem is hard to be resolved due to its property of nonlinear nonconvex integer programming. Then, to tackle this issue, the problem is decomposed into four sub-problems: topology design, phase shift adjustment, power allocation and switch selection. In terms of topology design, Tabu search algorithm is introduced to select the components that play the main role. For RIS switch selection, greedy algorithm is used to turn off the RISs that play the secondary role. Finally, an iterative optimization algorithm with high data-rate and low power consumption is proposed. The simulation results show that the performance of the irregular RIS aided system with topology design and RIS selection is better than that of the fixed topology and the fix number of RISs. In addition, the proposed joint optimization algorithm can effectively improve the data rate and energy efficiency by changing the propagation environment.

• Journal of Surface Science and Engineering
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• v.46 no.2
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• pp.55-60
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• 2013

Superhard TiN coatings were fabricated by DC and ICP (inductively coupled plasma) assisted magnetron sputtering techniques. The effect of ICP power, ranging from 0 to 300 W, on coating microstructure, preferred orientation mechanical properties were systematically investigated with HR-XRD, SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Grain sizes of TiN coatings were decreased from 12.6 nm to 8.7 nm with increase of ICP power. The maximum nanohardness of 67.6 GPa was obtained for the coatings deposited at ICP power of 300 W. Preferred orientation in TiN coatings also vary with ICP power, exerting an effective influence on film nanohardness.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.185-186
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• 2012

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.151-154
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• 2012

Flower-like and plate-like CuO nanopowder has been successfully synthesized using a facile microwave-assisted synthetic route. The morphology and size of the final products strongly depended on microwave power. The phase, structures and morphologies of the as-prepared products were investigated in detail by BET surface area analysis, X-ray diffraction (XRD) analysis, and scanning electron microscopy (SEM). In addition, the chemical oxygen demand of polluted lake water was employed for characterization of these new photocatalysts. The results showed correlations between the morphology of CuO micro-crystals and their catalytic properties.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.4
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• pp.47-54
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• 2009

In the last few years, lasers have found new applications as tools for ceramic machining which is laser-assisted machining(LAM). LAM process for the machining of difficult-to-machine materials such as structural ceramics, has recently been studied on silicon nitride workpiece for a wide range of operating condition. However, there have been few studies on rake angle in LAM process. In this paper we analyzed difference of machinability between positive and negative rake angle in tools. We have obtained interesting results that we could eliminate chattering, lower specific cutting and cutting ratio in case of positive rake angle. The results suggest that positive rake angled tools can make more plastic deformation and stable cutting of silicon nitride in comparison with negative rake angled one.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.262-267
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• 2004

Ultrasonic machining has been known as one of the conventional machining methods in the glass fabrication processes. In ultrasonic machining, typically, glass is removed by the impulse energy of the abrasive generated by the ultrasonic power. However, when the machining feature decrease under hundreds of micrometers, as conventional ultrasonic machining uses only the impulse energy of the abrasive, the speed of ultrasonic machining decreases significantly and the surface roughness becomes deteriorated. To overcome this size effect, the chemicals which can erode glasses, such as HF, XF, etc, are added to the slurry. The chemical-assisted ultrasonic machining method, so called, is another alternating effective way for micro machining of glasses. In previous work, we used the hydrofluoric acid (HF) as an additive chemical. But, as the HF solution is too poisonous to be used as a ultrasonic process additive, it is needed to be substituted by other safe chemicals. As results of the machinability comparison of several chemicals, the GST-500F was selected to replace the HF. The GST-500F (pH $4.0{\pm}1.0$) is non-volatile, odorless. During experimental works, it was shown that the machining rate increases 1.5 times faster than the conventional ultrasonic machining. The machining load also decreases. However, the enlargement of the hole diameter and significant tool wear are still the problems to be solved.