• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2002년도 춘계종합학술대회
• /
• pp.271-274
• /
• 2002

본 논문에서는 광센서용 광원에 적합한 1.55$\mu\textrm{m}$ 파장대의 InGaAsP/InP 반도체레이저를 제작하였다. 레이징을 억제시켜주기 위해서 bending type의 소자를 설계 및 제작하였으며, 제작된 소자의 출력은 펄스 구동전류 100㎃에서 1.6㎽이고, 스펙트럼 폭은 40nm의 값을 가졌다. 그리고, 제작된 광원을 적용하였을 때 광섬유 자이로스코프에 파이버 종단에서의 출력은 $25^{\circ}C$, 직류 100㎃에서 540㎻였고, 스펙트럼 폭은 53nm였다. 그리고, 불규칙잡음 계수는 2.5$\times$10­$^3$deg/√hr였고, 자이로 출력 drift도 잡음수준으로 조사되었다. 따라서, 본 연구에서 제작한 광원을 광섬유 자이로 스코프에 사용 가능함을 확인하였다.

• 한국화재소방학회논문지
• /
• 제26권1호
• /
• pp.61-67
• /
• 2012

3상 전동기를 이용하는 3상 전력계통에서 1상이 결상되면 계통에는 불평형 전류가 흐르거나 단상전력이 공급되어 전동기 코일의 과전류로 인한 화재발생은 물론 전력계통에 큰 피해를 주게 된다. 최근 3상 전동기 결상검출 방식으로는 열동 과전류계전기와 전자식 모터 보호계전기가 대다수 이용되고 있으며, 이들은 선로의 과열이나 과전류가 발생되면 검출하고 차단기를 동작시키는 방식으로 감지속도가 느리고 오동작과 정밀도가 떨어지는 문제점이 있다. 이들을 개선하기위하여 본 논문에서는 반도체 소자를 이용한 새로운 결상보호용 제어회로 토폴로지를 설계하여 감지속도와 정밀도를 향상시키고, 소형 경량으로 제작되어 현장의 3상 전동기 제어반에 용이하게 장착시킬 수 있는 장점이 있다. 그 결과 제안한 결상 보호장치는 3상 전동기를 보호하고 결상으로 발생하는 전기화재를 최소화시키고 그리고 전력계통의 안정적인 운전에 기여할 수 있을 것이다. 제안한 결상 보호장치는 다양한 동작특성 실험을 통하여 그 성능과 신뢰성이 입증된다.

• 마이크로전자및패키징학회지
• /
• 제8권1호
• /
• pp.1-4
• /
• 2001

새로운 구조의 APF optical link용 Si pin photodetector를 제작하고 그 특성을 분석하였다. 제작된 소자는 금속-반도체 접촉주위에 $p^{+}$-guard ring구조와 광이 입사되는 수광면에 그물망 모양의 얕은 $p^{+}$-확산영역을 갖는다. 제작된 소자의 전기.광학적 특성을 -5 V의 동작전압에서 측정한 결과, 접합 커패시턴스와 암전류는 각각 4 pF와 180 pA로 나타났으며 광신호 전류와 감도특성는 670 nm이 중심파장을 갖는 2.2 $\mu$W의 입사광 전력 아래에서 각각 1.22 $\mu$A와 0.55 A/W로 나타났다. 제작된 소자는 650~700 nm의 파장영역에서 최대 spectral response를 보이고 있으며 낮은 점한 커패시턴스와 우수한 신호분리능력으로 인해 red light optics응용에서 광신호 검출에 적합하게 사용될 수 있을 것으로 기대된다.

• 한국재료학회지
• /
• 제34권2호
• /
• pp.111-115
• /
• 2024

Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

• Journal of Power Electronics
• /
• 제4권3호
• /
• pp.138-151
• /
• 2004

In this paper, a constant frequency phase shifting PWM-controlled voltage source full bridge-type series load resonant high-frequency inverter using the $4^{th}$ generation IGBT power modules is presented for innovative consumer electromagnetic induction heating applications, such as a hot water producer, steamer and super heated steamer. The bridge arm side link passive capacitive snubbers in parallel with each power semiconductor device and AC load side linked active edge inductive snubber-assisted series load resonant tank soft switching inverter with a constant frequency phase shifted PWM control scheme is evaluated and discussed on the basis of the simulation and experimental results. It is proved from a practical point of view that the series load resonant and edge resonant hybrid high-frequency inverter topology, what is called, DE class type, including the variable-power variable-frequency regulation function can expand zero voltage soft switching commutation area even under low output power setting ranges, which is more suitable and acceptable for newly developed induction heated dual pack fluid heaters. Furthermore, even the lower output power regulation mode of this high-frequency load resonant tank inverter circuit is verified so that this inverter can achieve ZVS with the aid of the single auxiliary inductor snubber.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2005년도 전력전자학술대회 논문집
• /
• pp.774-777
• /
• 2005

In this paper, a constant frequency phase shifting PWM controlled voltage source full bridge-type series load resonant high-frequency inverter using the IGBT power modules is presented for innovative consumer electromagnetic induction heating applications such as a hot water producer, steamer and super heated steamer. The full bridge arm side link passive quasi-resonant capacitor snubbers in parallel with the each power semiconductor device and high frequency AC load side linked active edge inductive snubber-assisted series load resonant tank soft switching inverter with a constant frequency phase shifted PWM control scheme is discussed and evaluated on the basis of the simulation and experimental results. It is proved from a practical point of view that the series load resonant and edge resonant hybrid high-frequency soft switching PWM inverter topology, what is called class DE type. including the variable-power variable-frequency(VPVF) regulation function can expand zero voltage soft switching commutation range even under low output power setting ranges, which is more suitable and acceptable for induction heated dual packs fluid heater developed newly for consumer power utilizations. Furthermore, even in the lower output power regulation mode of this high-frequency load resonant tank high frequency inverter circuit it is verified that this inverter can achieve ZVS with the aid of the single auxiliary inductor snubber.

• Journal of Magnetics
• /
• 제7권3호
• /
• pp.101-105
• /
• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제12권4호
• /
• pp.397-404
• /
• 2012

Thermal generation by power dissipation of the highly integrated System on Chip (SoC) device is irregularly distributed on the intra chip. It leads to thermal increment of the each thermally different region and effects on the propagation timing; consequently, the timing violation occurs due to the misestimated number of buffers. In this paper, the timing budgeting methodology considering thermal variation which contains buffer insertion with wire segmentation is proposed. Thermal aware LUT modeling for cell intrinsic delay is also proposed. Simulation results show the reduction of the worst delay after implementing thermal aware buffer insertion using by proposed wire segmentation up to 33% in contrast to the original buffer insertion. The error rates are measured by SPICE simulation results.

• Journal of Electrical Engineering and Technology
• /
• 제12권1호
• /
• pp.189-197
• /
• 2017

This paper elaborates two novel proposed topologies (type-I and type-II) of the high step-up DC-DC converter using switched inductor and voltage multiplier cell. The advantages of these proposed topologies are the less voltage stress on semiconductor devices, low device count, high power conversion efficiency, high switch utilization factor and high diode utilization factor. We analyze the Type-II topologies operating principle and mathematical analysis in detail in continuous conduction mode. High-intensity discharge lamp for the automotive application can use the derived topologies. The proposed converters give better performance when compared to the existing types. Also, it is found that the proposed type-II converter has relatively higher voltage gain compared to the type-I converter. A 40 W, 12 V input voltage and 72 V output voltage has developed for the type-II converter and the performances are validated.

• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 2002년도 학술대회 논문집
• /
• pp.358-361
• /
• 2002

The millirneterwave high-T$_{c}$ superconducting(HTS) down-converter sub-system with the HTS/III-V integrated mixer as the central device is demonstrated first. The constituent components of HTS down-converter sub-system such as a single balanced type integrated mixer with rat-race coupler, a cavity type bandpass filter (26 GHz), and a HTS planar lowpass filter(1 GHz), semiconductor LNA and IF-power amplifier, a driving electronic module for A/D converter, and a Stirling type mini-cooler module were combined into an International stand- and rack of 19-inch. From the RF(-61 dBm, 26.5GHz)and LO signal(-1 dBm, 25.6 GHz), IF signal(0dBm, 0.9 GHz) agreed with simulated results is obtained.d.