• Journal of Power Electronics
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• v.18 no.3
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• pp.931-943
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• 2018

Wireless power transfer (WPT) technology has been the focus of a lot of research due to its safety and convenience. The Z-source inverter (ZSI) was introduced into WPT systems to realize improved system performance. The ZSI regulates the dc-rail voltage in WPT systems without front-end converters and makes the inverter bridge immune to shoot-through states. However, when the WPT system is combined with a ZSI, the system parameters must be configured to prevent the ZSI from entering an "accidental shoot-through" (AST) state. This state can increase the THD and decrease system power and efficiency. This paper presents a mathematical analysis for the characteristics of a WPT system and a ZSI while addressing the causes of the AST state. To deal with this issue, the impact of the system parameters on the output are analyzed under two control algorithms and the primary compensation capacitance range is derived in detail. To validate the analysis, both simulations and experiments are carried out and the obtained results are presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.416-421
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• 2011

Nowadays, the increasing demands upon mobile devices such as wireless sensor networks and the recent advent of low power electrical devices such as MEMS make such renewable power sources attractive. A vibration-driven MEMS lead zirconate titanate $Pb(Zr,Ti)O_3$ (PZT) cantilever device is developed for energy harvesting application. This paper presents a piezoelectric based energy harvester which is suitable for power generating from conventional vibration and has in providing energy for low power electron ic devices. The PZT cantilever is used d33 mode to get the electrical power. The PZT cantilever based energy harvester with the dimension of 7 mm${\times}$3 mm${\times}$0.03 mm is fabricated using micromachining technologies. This PZT cantilever has the mechanical resonance frequency with a 900 Hz. With these conditions, we get experimentally the 37 uW output power from this device with the application of 1g acceleration using the 900 Hz vibration. From this study, we show the feasibility of one of energy harvesting candidates using PZT based structure. This PZT energy harvester could be used for various applications such a batteryless micro sensors and micro power generators.

• Proceedings of the KIEE Conference
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• 2002.04a
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• pp.133-138
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• 2002

The developments of the solar and the wind power energy are necessary since the future alternative energies that have no pollution and no limitation are restricted. Currently power generation system of MW scale has been developed, but it still has a few faults with the weather condition. In order to solve these existing problems, combined generation system of photovoltaic(400W) and wind power generation system(400W) was suggested. It combines wind power and solar energy to have the supporting effect from each other. However, since even combined generation system cannot always generate stable output with ever-changing weather condition, power compensation device that uses elastic energy of spiral spring to combined generation system was also added for the present study. In an experiment, when output of system gets lower than 12V(charging voltage), power was continuously supplied to load through the inverter by charging energy obtained from generating rotary energy of spiral spring operates in small scale generator.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.6
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• pp.469-476
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• 2020

This study presents the results of the research on power supplies for welding machine using MOSFET switches in high frequency switching for ease of design and use a 100 kHz switching frequency for high power density. The topology of the proposed power supplies for welding machine is ZVS-PWM full-bridge converter. The proposed converter is designed on a distributed transformer for ease of design and be used in a 100 kHz switching frequency for high power density. The problem of power imbalance of transformers occurring in parallel operation of transformers can be improved by applying common mode coupled inductor and the corresponding contents are experimented and verified in this paper to present conclusions.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.8
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• pp.966-974
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• 2019

In this study, we propose a CMOS power amplifier (PA) using a bypass technique to enhance the efficiency in the low-power region. For the bypass structure, the common-gate (CG) transistor of the cascode structure of the driver stage is divided in two parallel branches. One of the CG transistors is designed to drive the power stage for high-power mode. The other CG transistor is designed to bypass the power stage for low-power mode. Owing to a turning-off of the power stage, the power consumption is decreased in low-power mode. The measured maximum output power is 20.35 dBm with a power added efficiency of 12.10%. At a measured output power of 11.52 dBm, the PAE is improved from 1.90% to 7.00% by bypassing the power stage. Based on the measurement results, we verified the functionality of the proposed bypass structure.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1508-1516
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• 2015

A single phase H-bridge inverter is employed in conventional Inductive Power Transfer (IPT) systems as the primary side power supply. These systems may not be suitable for some high power applications, due to the constraints of the power electronic devices and the cost. A high-frequency cascaded multi-level inverter employed in IPT systems, which is suitable for high power applications, is presented in this paper. The Phase Shift Pulse Width Modulation (PS-PWM) method is proposed to realize power regulation and selective harmonic elimination. Explicit solutions against phase shift angle and pulse width are given according to the constraints of the selective harmonic elimination equation and the required voltage to avoid solving non-linear transcendental equations. The validity of the proposed control approach is verified by the experimental results obtained with a 2kW prototype system. This approach is expected to be useful for high power IPT applications, and the output power of each H-bridge unit is identical by the proposed approach.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.162-163
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• 2008

이 논문에서는 Polyimide 기판의 $O_2$ 플라즈마 처리효과에 따른 GZO 박막의 구조적, 전기적, 광학적인 특성을 고찰하였다. ICP-RIE 방법을 이용하여 Polyimide 기판의 $O_2$ 플라즈마 처리의 변수로 RF power와 처리시간을 각 100 ~ 400 W, 120 ~ 600 초까지 조절하였다. RF 스퍼터링 방법으로 $O_2$ 플라즈마 처리효과에 따른 Polyimide 기판을 4인치의 GZO(ZnO : 95 wt%, $Ga_2O_3$ 5 wt%) 타겟을 사용하여 RF power 90 W, 공정압력 5 mTorr, Ar gas 20 sccm, 기판거리 5 cm, 박막두께 500nm, 상온의 조건으로 GZO 박막을 증착 하였다. Polyimide 기판에 $O_2$ 플라즈마 처리를 하지 않고 증착한 GZO 박막의 비저황은 $1.02\times10^{-2}\Omega$-cm 이었고 RF power 100W, 처리시간 120 초로 $O_2$ 플라즈마 처리 후에 증착한 GZO 박막의 비저항이 $1.89\times10^{-3}\Omega$-cm인 최적의 값이 측정되었으며 RF power가 증가할수록 투과도는 감소하였지만 처리시간의 변화에 따라서는 투과도 변화가 거의 없었다.

• Current Optics and Photonics
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• v.4 no.6
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• pp.571-575
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• 2020

Optical wireless power transmission (OWPT) is a good candidate for long-distance underwater wireless power transmission. In this work we investigate the transmission efficiency of underwater OWPT, depending on the operating wavelength. We consider four operating wavelengths: infrared, red, green, and blue. We also consider the cases of pure water and sea water for the working conditions. Our results show that it is necessary to select the operating wavelength of underwater OWPT according to the transmission distance and water type of the target application.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.159-165
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• 2016

Recently, active efforts are being made for future Si CMOS technology by various researches on emerging devices and materials. Capability of low power consumption becomes increasingly important criterion for advanced logic devices in extending the Si CMOS. In this work, a junctionless field-effect transistor (JLFET) with ultra-thin poly-Si (UTP) channel is designed aiming the sub-10-nm technology for low-power (LP) applications. A comparative study by device simulations has been performed for the devices with crystalline and polycrystalline Si channels, respectively, in order to demonstrate that the difference in their performances becomes smaller and eventually disappears as the 10-nm regime is reached. The UTP JLFET would be one of the strongest candidates for advanced logic technology, with various virtues of high-speed operation, low power consumption, and low-thermal-budget process integration.

• Journal of electromagnetic engineering and science
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• v.8 no.3
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• pp.129-133
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• 2008

An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.