• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.16-22
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• 2008

We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.76-79
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• 2005

Dry etching of NiFe, NiFeCo, and Ta for magnetic random access memory (MRAM) by inductively coupled plasmas (ICPs) of $Cl_2/Ar$ has been carried out. NiFe and NiFeCo showed maximum etch rates at a particular ICP source power, but the etch rate of Ta increased with the ICP source power. The etch rates of the magnetic thin films increased with the RF chuck power, but decreased with the operating pressure and the $Cl_2$ concentration. To avoid a corrosion problem by chlorine, the etched samples were rinsed with de-ionized water for 5 minutes after etching. The etch profile showed a clean and smooth surface at 50% $Cl_2$ concentration.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1247-1249
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• 1993

In this paper, NUDFET(NonUniformly Doped Field Effect Transistor) is presented as an alternative which offers the possibility of reducing the power necessary to operate switching circuits without a substantial loss in speed. The purpose of this NUDFET is to modify the electric field profile in order to cause carrier velocity saturation to occur at a lower voltage than it would occur in the uniformly doped device of the same channel length. The more MESFET and NUDFET circuits are realized, the more accurate model ins the performance of these devices become required. Analytic model ins was replaced by numerical analysis because of the complexity of device configuration. In this paper, FEM is selected because of simpler local mesh refinement and smaller computer memory than FDM. For accurate analysis, this paper has applied the Scharfetter-Gummel(S-G) Scheme and seven-point Gaussian Quadrature rule to assembly of the finite-element stiffness matrices and right-hand side vector of the semiconductor equations.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.7-12
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• 2023

The edge ring placed on the outside of the electrostatic chuck (ESC) is a key component for protecting the ESC and controlling the etching uniformity of the edge of the wafer. Therefore, it is very important to understand the etching phenomenon of edge rings for edge ring management and equipment homeostasis. In this study, a specimen with SiO₂ hard mask and underlying Si mold was installed on the edge ring surface and the etching results were measured by varying the edge ring 2MHz RF power. By developing PI-VM model with high prediction accuracy and analyzing the roles of key parameters in the model, we were able to evaluate the effect of plasma and sheath characteristics around the edge ring on edge ring erosion. This analysis method provided information necessary for edge ring maintenance and operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.32-36
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• 2021

The number of processes in the manufacture of semiconductors, displays and solar cells is increasing. And as the processes is performed, multiple layers of films and various patterns are formed on the wafer. At this time, substrate warpage occurs due to the difference in stress between each film and pattern formed on the wafer. the substrate warping phenomenon occurs due to the difference in stress between each film and pattern formed on the wafer. We developed a new warpage measurement method to measure wafer warpage during real-time processing. We performed an experiment to measure the presence and degree of warpage of the substrate in real time during the process by adding only measurement equipment for applying additional electrical signals to the existing ESC and detecting the change of the additional electric signal. The additional electrical measurement signal applied at this time is very small compared to the direct current (DC) power applied to the electrostatic chuck whit a frequency that is not generally used in the process can be selectively used. It was confirmed that the measurement of substrate warpage can be easily separated from other power sources without affecting.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.161-165
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• 2005

We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.10 s.241
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• pp.1416-1429
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• 2005

In order to meet the increasing competitive pressures coupled with higher demands for component quality, whirling machines have been at the cutting edge of the automobile industry for more than 25 years. The hard whirling process can save on machining time and operation elimination. Hard whirling is done dry, without coolant. The chips carry away nearly all of the heat during cutting, leaving the workpiece cool and minimizing any thermal geometry variations. The surface finish and profile accuracy are close to grinding quality. Whirling machines usually consist of four major parts; 1) loading system that requires the necessary axial speeds, 2) head stock that needs high precision clamping and positioning system at the chuck and tailstock, 3) whirling unit that demands the high cutting speeds and cutting power fer cutting deep thread profiles and 4) unloading system that requires an easy workpiece unloading. Also, capabilities of the whirling machine can be improved by attaching a vision system to the machine. Most of whirling machines in Korean automobile industry are imported from the Leistritz company, Germany and the Hasegawa company, Japan. Tn this paper, a basic research will be performed to improve and enhance the existing whirling machines. Finally, a new Korean whirling machine will be proposed and developed.

• KIISE Transactions on Computing Practices
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• v.21 no.10
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• pp.639-644
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• 2015

The capacity of flash-based storage such as Solid State Drive(SSD) and embedded Multi Media Card(eMMC) is ever-increasing because of the needs from the end-users. However, if a flash-based storage crashes, such as during power failure, the flash translation layer(FTL) is responsible for the crash recovery based on the entire flash memory. The recovery time increases as the capacity of the flash-based storages increases. We propose O1FTL with O(1) crash recovery time that is independent of the flash capacity. O1FTL adopts the working area technique suggested for the flash file system and evaluates the design on a real hardware platform. The results show that O1FTL achieves a crash recovery time that is independent of the capacity and the overhead, in terms of I/O performance, and achieves a low P/E cycle.

• Tribology and Lubricants
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• v.38 no.3
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• pp.93-100
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• 2022

Micro-light emitting diode (micro-LED) displays offer numerous advantages such as high brightness, fast response, and low power consumption. Hence, they are spotlighted as the next-generation display. However, defective LEDs may be created due to non-uniform contact loads or LED alignment errors. Therefore, a repair process involving the replacement of defective LEDs with favorable ones is necessitated. The general repair process involves the removal of defective micro-LEDs, interconnection material transfer, as well as new micro-LED transfer and bonding. However, micro-LEDs are difficult to repair since their size decreases to a few tens of micron in width and less than 10 ㎛ in thickness. The conventional nozzle-type dispenser for fluxes and the conventional vacuum chuck for LEDs are not applicable to the micro-LED repair process. In this study, transfer conditions are determined using a micro stamp for repairing micro-LEDs. Results show that the aging time should be set to within 60 min, based on measuring the aging time of the flux. Additionally, the micro-LEDs are subjected to a compression test, and the result shows that they should be transferred under 18.4 MPa. Finally, the I-V curves of micro-LEDs processed by the laser and hot plate reflows are measured to compare the electrical properties of the micro-LEDs based on the reflow methods. It was confirmed that the micro-LEDs processed by the laser reflow show similar electrical performance with that processed by the hot plate reflow. The results can provide guidance for the repair of micro-LEDs using micro stamps.