• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.187-192
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• 2012

Development of new efficient, high voltage switching devices with wide safe operating area and low on-state losses has received considerable attention in recent years. One of those structures with a very effective geometrical design is the trench gate Insulated Gate Bipolar Transistor(IGBT).power IGBT devices are optimized for high-voltage low-power design, decided to aim. Class 1,200 V NPT Planer IGBT, 1,200 V NPT Trench IGBT for class has been studied.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.49-54
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• 2017

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

• Journal of Power Electronics
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• v.9 no.5
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• pp.708-717
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• 2009

In this paper a new zero voltage transition PWM bridgeless PFC is introduced. The auxiliary circuit provides soft switching condition for all semiconductor devices. Also, in the resonant path of the auxiliary circuit, only two semiconductor devices exist. Therefore the resonant conduction losses are low. Furthermore, the auxiliary circuit semiconductor elements consist of only one diode and one switch. The proposed auxiliary circuit is applied to a bridgeless PFC converter to further reduce conduction and switching losses. In this paper, the operating modes of this converter are explained and the resulting ideal and simulation waveforms are shown. The presented experimental results justify the theoretical analysis.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.367-368
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• 2014

This paper investigates characteristics of high power semiconductor device losses in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor device of press-pack type IGCT of 6.5kV is considered in this paper. Analysis is performed based on neutral point clamped (NPC) 3-level back-to-back type voltage source converter (VSC) supplied from grid voltage of 4160V. This paper describes total loss distribution at worst case under inverter and rectifier operating mode for the power semiconductor switches. The loss analysis is confirmed through PLECS simulations. In addition, the loss factors due to di/dt snubber and ac input filter are presented. The investigation result shows that IGCT type semiconductor devices generate the total efficiency of 97.74% under the rated condition.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.2
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• pp.173-183
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• 2014

In this paper, an analysis of power losses for the three-level T-type and neutral-point clamped (NPC) PWM inverters is presented, in which the conduction and switching losses of semiconductor devices of the inverters are taken into account. In the inverter operation, the conduction loss depends on the modulation index (MI) and power factor (PF), whereas the switching loss depends on the switching frequency. Power losses for the T-type and NPC inverters are analyzed and calculated at the different operating points of MI, PF and the switching frequency, in which the four different models of semiconductor devices are adopted. In the case of lower MI, the NPC-type is more efficient than the T-type, and vice versa. The validity of the power loss analysis has been verified by the simulation results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.6-7
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• 2008

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450V power MOSFET devices by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}cm^{-3}$, size of $600{\mu}m^2$ with 4.5 $\Omega$, and off-state leakage current below 50 ${\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods is meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• Journal of Advanced Engineering and Technology
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• v.10 no.2
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• pp.203-208
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• 2017

Due to global climate change issues, there is a growing demand for systems throughout the industry. In the case of power conversion, studies have been actively conducted to change the structure of the power conversion circuit and to apply new power devices. In particular, the WBG (Wide Band Gap), which is newly emerged device in the market for developing semiconductor technology, has demonstrated advantages in applying for various aspects in comparison to the existing Si (Silicon) Semiconductor. Recent research centers in the railway industry are focusing on developing technologies suitable for railway vehicles by utilizing these new developments in railway countries such as Japan and Europe. This paper researches the WBG device that is applicable to the auxiliary power supplies (APS) in railway system, and analyzes the downsizing effects to APS in high-speed railway by conducting a theoretical analysis and simulation.

• Proceedings of the KIEE Conference
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• 2001.11c
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• pp.34-37
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• 2001

In this paper, we designed and implemented the 60W DC characteristic measurement system for semiconductor devices. The proposed system is composed of 2 SMU(Source and Measure Unit)s, 2 HPU(High power Unit)s, 2VSU(Voltage Source Unit)s, and 2 VMU(Voltage Measurement Unit)s. HPU can source/measure voltage from -200V to 200V and source/measure current from -3A to 3A within 60W. Experimental results show that the implemented system can measure the power devices such as power BJT, regulator IC, and voltage detector.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.6
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• pp.496-502
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• 2020

The reliability of a solid-state transformer (SST) is one of the important aspects to consider when replacing a conventional low-frequency passive transformer with SST for urban railway vehicles. Lifetime evaluation of SST in the design phase is therefore essential in guaranteeing a certain SST reliability. In this study, a lifetime evaluation of power semiconductor devices in SST is performed with respect to temperature stress. For a case study, a 3 MW SST with three kinds of power modules (one IGBT module and two SiC-MOSFET modules) is used for the lifetime estimation under the operation profile of urban railway vehicles.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.3
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• pp.163-170
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• 1987

It is known that reactive component of AC power in the power system gives no energy to outside and cuses enlargiment of power apparatus, voltage fluctuation and unstability of power system. The power conversion system and control system which are composed of power semiconductor devices such as tyristor, transistor, GTO and so on have been appeared as new sources of reactive power. So the cmpensation of reactive power in power semiconductor systems is one of impending problem on the point of energy conservation and inprovement of power factor. This paper treates the fundamental review of the current type power compensation system that compensates the reactive power by MOSFET inverter. This inverter detects not only the reactive power of fundamental wave but also that of all harmoics created in the power semiconductor system and is scheduled to control by sampled value.