• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.4
• /
• pp.271-274
• /
• 2013

Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

• Journal of IKEEE
• /
• v.22 no.2
• /
• pp.427-431
• /
• 2018

This research was worked about $Ga_2O_3$ Epi wafer that was one of the mose wide band gap semiconductors to be used power semiconductor industry. This wafer was grown $5.3{\mu}m$ thickness on Sn doped $Ga_2O_3$ Substrate by HVPE(Hydride Vapor Phase Epitaxy). Generally, we can fabricate 600V class power semiconductor devices when the thickness of compoound power semiconductor is $5{\mu}m$. but in case of $Ga_2O_3$ Epi wafer, we can obtain over 1000V class. As a result of J-V measurment of the grown $Ga_2O_3$ Epi wafer, we obtain $2.9-7.7m{\Omega}{\cdot}cm^2$ on resistance. Specially, in case of reverse, we comfirmed a little leakage current when the reverse voltage is over 200V.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.6
• /
• pp.9-13
• /
• 2019

In this study, a miniature thin film-patterned heater was fabricated on a silicon substrate using semiconductor process technology and the thermal characteristics of the applied voltage, power, and temperature of the thin film heater were measured and analyzed. The temperature of the thin film pattern heater increased with increasing power, but the temperature increase rate was gradual at high power intervals. The characteristics of the high temperature section of the platinum thin film-patterned heater were analyzed using the heat resistance model under atmospheric and vacuum conditions. The thermal resistance measured in a vacuum atmosphere was 0.79 [K/mW] higher than the heat resistance value 0.69 [K/mW] in air. The temperature of the thin film pattern heater can be maintained at a low power in a vacuum rather than in air, and these results are expected to be utilized in the structural design of a thin film-patterned heater element.

• Nuclear Engineering and Technology
• /
• v.51 no.2
• /
• pp.439-443
• /
• 2019

To improve the noise characteristics, software-based noise reduction algorithms are widely used in cadmium zinc telluride (CZT) pixelated semiconductor gamma camera system. The purpose of this study was to develop an improved median filtering algorithm using a thresholding method for noise reduction in a CZT pixelated semiconductor gamma camera system. The gamma camera system simulated is a CZT pixelated semiconductor detector with a pixel-matched parallel-hole collimator and the spatial resolution phatnom was designed with the Geant4 Application for Tomography Emission (GATE). In addition, a noise reduction algorithm with a median filter using an improved thresholding method is developed and we applied our proposed algorithm to an acquired spatial resolution phantom image. According to the results, the proposed median filter improved the noise characteristics compared to a conventional median filter. In particular, the average for normalized noise power spectrum, contrast to noise ratio, and coefficient of variation results using the proposed median filter were 10, 1.11, and 1.19 times better than results using conventional median filter, respectively. In conclusion, our results show that the proposed median filter using improved the thresholding method results in high imaging performance when applied in a CZT semiconductor gamma camera system.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.2
• /
• pp.7-10
• /
• 2022

A functional polyethylene terephthalate substrate to increase light extraction efficiency of organic light-emitting diodes is studied. We formed nano-structured PET surfaces by controlling the power, gas, and exposure time of the linear ion-beam. The haze of the polyethylene terephthalate can be controlled from 0.2% to 76.0% by changing the peak-to-valley roughness of nano structure by adjusting the exposure cycle. The treated polyethylene terephthalate shows average haze of 76.0%, average total transmittance of 86.6%. The functional PET increases the current efficiency of organic light-emitting diodes by 47% compared to that of organic light-emitting diode on bare polyethylene terephthalate. In addition to polyethylene terephthalate with light extraction performance, by conducting additional research on the development of functional PET with anti-reflection and barrier performance, it will be possible to develop flexible substrates suitable for organic light-emitting diodes lighting and transparent flexible displays.

• Journal of the Semiconductor & Display Technology
• /
• v.23 no.1
• /
• pp.1-6
• /
• 2024

Recently, artificial neural networks have been playing a crucial role and advancing across various fields. Artificial neural networks are typically categorized into feedforward neural networks and recurrent neural networks. However, feedforward neural networks are primarily used for processing static spatial patterns such as image recognition and object detection. They are not suitable for handling temporal signals. Recurrent neural networks, on the other hand, face the challenges of complex training procedures and requiring significant computational power. In this paper, we propose memristors suitable for an advanced form of recurrent neural networks called reservoir computing systems, utilizing a mask processor. Using the characteristic equations of Ti/TiOx/TaOy/Pt, Pt/TiOx/Pt, and Ag/ZnO-NW/Pt memristors, we generated current-voltage curves to verify their memristive behavior through the confirmation of hysteresis. Subsequently, we trained and inferred reservoir computing systems using these memristors with the NIST TI-46 database. Among these systems, the accuracy of the reservoir computing system based on Ti/TiOx/TaOy/Pt memristors reached 99%, confirming the Ti/TiOx/TaOy/Pt memristor structure's suitability for inferring speech recognition tasks.

• Journal of Electrical Engineering and Technology
• /
• v.1 no.2
• /
• pp.216-225
• /
• 2006

This paper presents a new circuit topology of DC busline switch and snubbing capacitor-assisted full-bridge soft-switching PWM inverter type DC-DC power converter with a high frequency link for low voltage large current applications as DC feeding systems, telecommunication power plants, automotive DC bus converters, plasma generator, electro plating plants, fuel cell interfaced power conditioner and arc welding power supplies. The proposed power converter circuit is based upon a voltage source-fed H type full-bridge high frequency PWM inverter with a high frequency transformer link. The conventional type high frequency inverter circuit is modified by adding a single power semiconductor switching device in series with DC rail and snubbing lossless capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge inverter arms and DC busline can achieve ZVS/ZVT turn-off and ZCS turn-on commutation operation. Therefore, the total switching losses at turn-off and turn-on switching transitions of these power semiconductor devices can be reduced even in the high switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules is selected to be 60 kHz. It is proved experimentally by the power loss analysis that the more the switching frequency increases, the more the proposed DC-DC converter can achieve high performance, lighter in weight, lower power losses and miniaturization in size as compared to the conventional hard switching one. The principle of operation, operation modes, practical and inherent effectiveness of this novel DC-DC power converter topology is proved for a low voltage and large current DC-DC power supplies of arc welder applications in industry.

• Journal of IKEEE
• /
• v.13 no.1
• /
• pp.65-70
• /
• 2009

We propose an ultrashort pulse optical code-division multiple-access (O-CDMA) scheme based on a pseudorandom binary M-sequence spectral phase encoding and decoding of coherent mode-locked laser pulses and perform a numerical simulation to analyze its feasibility. We demonstrate the ability to properly decode any of the multiple (eight) 10 Gbit/s users by the matched code selection of the spectral phase decoder. The peak power signal to noise ratio of properly and improperly decoded $8{\times}10 Gb/s$ signals could be greater than 15 for 127 M-sequence coding.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.12 no.3
• /
• pp.370-376
• /
• 2012

In this work, design considerations for high-performance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An $f_{-3dB}$ of 80 GHz at an operating voltage of 1 V was obtained.

• Proceedings of the KIPE Conference
• /
• 2014.11a
• /
• pp.97-98
• /
• 2014

신재생에너지에 대한 세계적인 수요는 2010년도 이후에도 계속 증가하는 추세이다. 이러한 이유는 에너지 고갈과 기후변화에 기인하며, 화석연료의 경우 사용가능 연한은 석유 54.2년, 천연가스 63.6년, 석탄 112년에 불과하며, 기존 화석연료 사용에 의한 온실가스 배출 등은 각종 환경문제를 발생하고 있다. 따라서 세계 여러 나라에서는 에너지 고갈을 해결하기 위한 다양한 방안을 모색중이며, 대안으로 신재생에너지를 인류의 새로운 에너지원으로 주목하고 있다. 하지만 물, 바람, 태양 등 신재생에너지원의 경우 출력특성 등이 매우 불안하여 이들 에너지원을 효율적으로 사용하기 위해서는 반드시 에너지저장시스템(ESS, Energy Storage System)이 필요하다. 본 논문에서는 태양광 가로등을 대상으로 기존의 납축전지를 대체하기 위한 리튬이차전지를 사용한 배터리팩을 개발하고 표준화 및 범용화를 위해 셀들의 조합을 용이하게 하기 위한 유니버셜 모듈을 제안한다.