• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.400-403
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• 2000

This paper deals with the active clamp ZVS flyback converter for semiconductor plasma etching system. The proposed converter has the characteristics of the good power facter low switching noise and efficiency improvement. The characteristics are verified through simulation results. Furthermore the ringing effect due to output capacitance of the main switch can be eliminated by use of active clamp circuit.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.30-33
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• 2000

Using power semiconductor switches such as IGBTs diodes and L-C circuits novel repetitive impulse voltage generator is developed. In the presented circuits high voltage pulse is generated by series-connection of capacitors and IGBTs. The charging of capacitors and voltage balance of IGBTs is done automatically. To verify the proposed circuit 20kV, 300A pulse generator is manufactured and tested.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.409-412
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• 1990

Series connection of power switching semiconductor elements is unavoidable when a high voltage convertor is aimed. However, it is important to equalize distribution of turn-off voltage because the switching elements have different characteristics. In this paper optimal switching control algorithm is proposed so that series connected poker switching semiconductor elements can be always switched simultaneous turn-on and turn-off.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.36-37
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• 2013

This paper presents high voltage operation sensing boost converter with high side current. Proposed topology has three functions which are high voltage driving, high side current sensing and low voltage boost controller. High voltage gate driving block provides LED dimming function and switch function such as a load switch of LED driver. To protect abnormal fault and burn out of LED bar, it is applied high side current sensing method with high voltage driver. This proposed configuration of boost converter shows the effectiveness capability to LED driver through measurement results.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.224-225
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• 2012

When Power Factor Correction(PFC) boost converter is designed for the universal input range, unwanted burst operation can be found at high line and light load. This operation may cause an audible noise from the boost inductor or sensitive flicker for human eye can be found in case of the display application. In order to solve this difficulty, this paper proposes the new control range compensation method and shows the effectiveness than the conventional method thru the experimental result.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.860-863
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• 2003

In this paper high power SMU(Source Measurement Unit) having 50V/1.5A source/measure range has been designed and implemented. The SMU has two operation mode, voltage mode and current mode. The SMU can be used as variable voltage source, variable current source, voltage meter, or current meter. Combining two different unit, output power can be doubled as 100V/1.5A. The developed SMU tan be used many semiconductor testing system and electronic device inspecting system.

• ETRI Journal
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• v.19 no.2
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• pp.35-47
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• 1997

A power amplifier operating at 3.3 V has been developed for CDMA/AMPS dual-mode cellular phones. It consists of linear GaAs power MESFET's, a new gate bias control circuit, and an output matching circuit which prevents the drain terminal of the second MESF from generating the harmonics. The relationship between the intermodulation distortion and the spectral regrowth of the power amplifier has been investigated with gate bias by using the two-tone test method and the adjacent channel leakage power ratio (ACPR) method of CDMA signals. The dissipation power of the power amplifier with a gate bias control circuit is minimized to below 1000 mW in the range of the low power levels while satisfying the ACPR of less than -26 dBc for CDMA mode. The ACPR of the power amplifier is measured to be -33 dBc at a high output power of 26 dBm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.667-670
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• 2010

In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.

• Journal of Power Electronics
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• v.11 no.4
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• pp.606-611
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• 2011

Power electronics is a key technology for electric, hybrid, plug-in hybrid, and fuel cell vehicles. Typical power electronics converters used in electric drive vehicles include dc/dc converters, inverters, and battery chargers. New semiconductor materials such as silicon carbide (SiC) and novel topologies such as the Z-source inverter (ZSI) have a great deal of potential to improve the overall performance of these vehicles. In this paper, a Z-source inverter for fuel cell vehicle application is examined under three different scenarios. 1. a ZSI with Si IGBT modules, 2. a ZSI with hybrid modules, Si IGBTs/SiC Schottky diodes, and 3. a ZSI with SiC MOSFETs/SiC Schottky diodes. Then, a comparison of the three scenarios is conducted. Conduction loss, switching loss, reverse recovery loss, and efficiency are considered for comparison. A conclusion is drawn that the SiC devices can improve the inverter and inverter-motor efficiency, and reduce the system size and cost due to the low loss properties of SiC devices. A comparison between a ZSI and traditional PWM inverters with SiC devices is also presented in this paper. Based on this comparison, the Z-source inverter produces the highest efficiency.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.38-39
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• 2017

This paper proposes a new control method for an AC-DC Buck converter which is utilized as a front-end converter of a 2-stage high power density adapter. In the conventional adapter applications, 2-stage configuration shows higher power transfer efficiency and higher power density than those of the single stage flyback converter. In the 2-stage AC-DC converter, the boost converter is widely used as a front-end converter. However, an efficiency variation between high AC line and low AC line is large. On the other hand, the proposed conduction band control method for a buck front-end converter has an advantage of small efficiency variation. In the proposed control method, switching operation is determined by a band control voltage which represents output load condition, and an AC line voltage. If the output load increasesin low AC line, the switching operation range is expanded in half of line cycle. On the contrary, in light load and high line condition, the switching operation is narrowed. Thus, the proposed control method reduces switching loss under high AC line and light load condition. A 60W prototype which is configured the buck and LLC converter with the proposed control method is experimented on to verify the validity of the proposed system. The prototype shows 92.16% of AC-DC overall efficiency and 20.19 W/in 3 of power density.