• Journal of Power Electronics
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• v.13 no.1
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• pp.20-30
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• 2013

This paper presents a soft switching DC/DC converter for high voltage application. The interleaved pulse-width modulation (PWM) scheme is used to reduce the ripple current at the output capacitor and the size of output inductors. Two converter cells are connected in series at the high voltage side to reduce the voltage stresses of the active switches. Thus, the voltage stress of each switch is clamped at one half of the input voltage. On the other hand, the output sides of two converter cells are connected in parallel to achieve the load current sharing and reduce the current stress of output inductors. In each converter cell, a half-bridge converter with the asymmetrical PWM scheme is adopted to control power switches and to regulate the output voltage at a desired voltage level. Based on the resonant behavior by the output capacitance of power switches and the transformer leakage inductance, active switches can be turned on at zero voltage switching (ZVS) during the transition interval. Thus, the switching losses of power MOSFETs are reduced. The current doubler rectifier is used at the secondary side to partially cancel ripple current. Therefore, the root-mean-square (rms) current at output capacitor is reduced. The proposed converter can be applied for high input voltage applications such as a three-phase 380V utility system. Finally, experiments based on a laboratory prototype with 960W (24V/40A) rated power are provided to demonstrate the performance of proposed converter.

• Journal of Power Electronics
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• v.15 no.1
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• pp.86-95
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• 2015

An active clamp high step-up boost converter with a coupled inductor is proposed in this paper. In the proposed strategy, a coupled inductor is adopted to achieve a high voltage gain. The clamp circuit is included to achieve the zero-voltage-switching (ZVS) condition for both the main and clamp switches. A rectifier composed of a capacitor and a diode is added to reduce the voltage stress of the output rectifier diode. As a result, diodes with a low reverse-recovery time and forward voltage-drop can be utilized. Since the voltage stresses of the main and clamp switches are far below the output voltage, low-voltage-rated MOSFETs can be adopted to reduce conduction losses. Moreover, the reverse-recovery losses of the diodes are reduced due to the inherent leakage inductance of the coupled inductor. Therefore, high efficiency can be expected. Firstly, the derivation of the proposed converter is given and the operation analysis is described. Then, a steady-state performance analysis of the proposed converter is analyzed in detail. Finally, a 250 W prototype is built to verify the analysis. The measured maximum efficiency of the prototype is 95%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.284-288
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• 2013

Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as $8.25{\mu}m$ cell pitch and $4.25{\mu}m$ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.

• Journal of Electrical Engineering and Technology
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• v.12 no.5
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• pp.1891-1901
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• 2017

In this paper, optimal control of the fuel cell and design of a high-efficiency power converter is implemented to build a high-priced fuel cell system with minimum capacity. Conventional power converter devices use a non-isolated boost converter for high efficiency while the battery is charged, and reduce its conduction loss by using MOSFETs instead of diodes. However, the efficiency of the boost converter decreases, since overshoot occurs because there is a moment when the body diode of the MOSFET is conducted during the dead time and huge loss occurs when the dead time for the maximum-power-flowing state is used in the low-power-flowing state. The method proposed in this paper is to adjust the dead time of boost and rectifier switches by predicting the power flow to meet the maximum efficiency in every load condition. After analyzing parasite components, the stability and efficiency of the high-efficiency boost converter is improved by predictive compensation of the delay component of each part, and it is proven by simulation and experience. The variation in switching delay times of each switch of the full-bridge converter is compensated by falling time compensation, a control method of PWM, and it is also proven by simulation and experience.

• Journal of Power Electronics
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• v.14 no.3
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• pp.478-487
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• 2014

This study presents a new interleaved three-level zero-voltage switching (ZVS) converter for high-voltage and high-current applications. Two circuit cells are operated with interleaved pulse-width modulation in the proposed converter to reduce the current ripple at the input and output sides, as well as to decrease the current rating of output inductors for high-load-current applications. Each circuit cell includes one half-bridge converter and one three-level converter at the primary side. At the secondary side, the transformer windings of two converters are connected in series to reduce the size of the output inductor or switching current in the output capacitor. Based on the three-level circuit topology, the voltage stress of power switches is clamped at $V_{in}/2$. Thus, MOSFETs with 500 V voltage rating can be used at 800 V input voltage converters. The output capacitance of the power switch and the leakage inductance (or external inductance) are resonant at the transition interval. Therefore, power switches can be turned on under ZVS. Finally, experiments verify the effectiveness of the proposed converter.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.361-362
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• 2016

Presented in this paper is the design of a high voltage switch module made up of MOSFETs, pulse transformers and their gate driver circuits compactly fitted onto a single PCB module. The ease by which the switch modules can be configured (series stacking and/or parallel stacking) to meet future load variations allows for flexible operation of this design. In addition, the detailed implementation of the gate driver circuit for reliable and easier switch synchronization is also described in this paper. The stored energy in the capacitor bank of a 15kV, 4.5kJ/s peak power capacitor charger was discharged using the developed high voltage switch, and by experimental results, the operation of the proposed circuit was verified to be effectively used as a switch for pulse discharging.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.568-572
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• 1991

This paper describes the three-phase inverter system for 1/2[HP] induction servo motor, using TMS370C050 single-chip microprocessor. The Power MOSFETs are used for PWM inverter circuit because of the advantages such as less harmonic losses and smaller peak current, less torque ripples and noises. Single-chip microprocessor enables the whole controller to be simple and reduced size as well as to more stable and flexible. The basic structures are shown for the power circuit, including the protection and driving circuitry, and the control loops for inverter control functions. The experimental results are given for the prototype PWM inverter system.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.562-564
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• 1994

IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i. e., efficient voltage gate drive requirements and high current density capability. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The protection circuit requirements are unique for the IGBT and can be examined using the model.

• Proceedings of the KIPE Conference
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• 2001.12a
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• pp.129-132
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• 2001

Recently, a ZVT boost converter is embedded in a power factor correction system. The control circuit of the converter assures soft-switching for all the MOSFETs and load regulation. The PFC system contains additional control circuits which assure the input voltage in a sinusoidal form and feed-forward line voltage regulation. In this paper, a soft switching boost converter with zero-voltage transition(ZVT) main switch using zero-current switching(ZCS) auxiliary switch is proposed. Operating intervals of the converter are persented and analyzed. The proposed results show that the main switch maintains UT while auxiliary switch retains ZCS for the complete specified line and load conditions.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.3
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• pp.37-44
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• 1998

This paper compared to the operation performance and efficiency of an interleaved active clap ZVS forward converter and an interleaved ZVS half-bridge converter in distributed power system. The design for the current-mode control circuit of an interleaved active clamp ZVS forward converter is presented. To simplify the gate drive circuits, N-P MOSFETs coupled active clamp method is proposed. An efficiency about 90% for the 50∼100% load range is achieved.