• Title/Summary/Keyword: Power MOSFETs

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Three-phase Motor Drive IC for automotive applications (자동차용 3상 모터 드라이브 IC)

  • Jung, Jin-Soo;Hwang, Seung-Hyun;Park, Shi-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.41-42
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    • 2009
  • This paper presents a motor drive IC for automotive applications. The drive IC is dedicated to control and drive external MOSFETs which directly drive 3-phase motor with a high current. In case of driving high-side power switches, the bootstrap topology is widely used. However, it requires three bootstrap diode and three capacitor respectively. And it needs a minimum charging time to maintain high-side voltage. The motor drive IC uses a charge-pump circuit for all three high-side voltage with various protection schemes for automotive applications.

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Performance Improvement of the 2-phase Stepping Motor Driver with CPLD (CPLD를 이용한 2상 스테핑 모터 드라이버의 성능개선)

  • 오태석;전성구;김일환
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.53 no.9
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    • pp.615-621
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    • 2004
  • This paper describes the design of a 2-phase stepping motor driver using CPLD. The driver IC such as L297, which is mostly used has some difficulties in PWM current control because of the switching noise of power MOSFETs. The switching noise causes current ripple and acoustic noise. To reduce the switching noise, we designed a digital filter using VHDL. Also we designed constant current method for 1-2 phase(half step) excitation to reduce the torque ripple. Experimental results show the effectiveness of the proposed method. It is enabling further enhancements of stepping motor drive technology broadening the range of applications for the stepping motors.

Reverse Current Control Method of Synchronous Boost Converter for Fuel Cell (연료전지용 동기식 부스트 컨버터의 역전류 제어방식)

  • Kim, Mi-Ji;Shin, Min-Ho;Choi, Seong-Chon;Kim, Ji-Hwan;Jung, Yong-Chae;Won, Chung-Yuen
    • Proceedings of the KIPE Conference
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    • 2013.07a
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    • pp.411-412
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    • 2013
  • This paper proposes the reverse current control method of synchronous boost converter for fuel cell. In order to implement a high efficiency charger with the synchronous boost converter, using MOSFETs instead of diodes is essential. Using the conventional boosting method, the reverse current is generated during transient state due to the nature of fuel-cell which needs soft starting depending on the amount of hydrogen. By using PWM control method, fuel-cell can be protected from being damaged by reverse current, so synchronous boosting method can be applied to charger applications. The experimental results are shown to verify that the implementation of high-efficiency converter is possible.

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A Study on the Characteristic Improvement of PLD-used Microstep Driver for 5 Phase Hybrid Stepping Motor (PLD를 이용한 5상 스텝모터의 마이크로스텝 구동회로의 집적화와 성능향상에 관한 연구)

  • Ahn, Ho-Kyun;Park, Seung-Kyu;Nam, Jing-Rak;Ji, Dae-Young;Song, Chi-Hoon;Kim, Hyung-Moon
    • Proceedings of the KIEE Conference
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    • 2000.07b
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    • pp.1143-1145
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    • 2000
  • In this paper, it presents the design and implementation of a Microstep control IC using Programmable Logic Device(PLD). A Microstep driver is implemented with a 5-phase hybrid stepping motor, which has a Pentagon winding, power MOSFETs, and some devices to improve the system characteristics. The Microstep driving method is used for high performance motion control, low vibration and low noise in motor control system. The improvement of the electrical and mechanical driving characteristic of a step motor is achieved by applying microstep driver.

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Radiation Effects on the Power MOSFET for Space Applications

  • Lho, Young-Hwan;Kim, Ki-Yup
    • ETRI Journal
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    • v.27 no.4
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    • pp.449-452
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    • 2005
  • The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal-oxide semiconductor field-effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on-resistance for two kinds of MOSFETs (200 V and 100 V of $V_{DSS}$) are tested for ${\gamma}-irradiation$ and compared with the electrical specifications under the pre- and post-irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the ${\gamma}-radiation$ facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540.

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Design of High-Response Speed Control System for AC Servomotor Drive (유도형 교류 서보전동기의 고응답 구동회로 설계에 관한 연구)

  • 성영권;조철제
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.5
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    • pp.474-482
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    • 1992
  • This paper describes the speed control system of an induction type ac servomotor drive on the vector control basis of slip frequency and constant secondary flux control for a quick torque response. The system is composed of a digital controller using a SCB-V50 microprocessor and a PWM inverter with power MOSFETs for high speed switching. And, for the measurement of actual instantaneous currents, MDCS A070-051 hall sensors are employed. The rising time of step responce by this system through the test of a 600[W] ac servomotor is 30[ms]. Overall experimental result shows that the drive performance of the system is similar to that of a separately excited armature current control of a dc motior.

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Adaptive Synchronous Rectification Control Method for High Efficiency Resonant Converter

  • Kim, Joohoon;Moon, Sangcheol;Kim, Jintae
    • Proceedings of the KIPE Conference
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    • 2017.07a
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    • pp.40-41
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    • 2017
  • New adaptive SR (synchronous rectification) control method is proposed offering high efficiency in entire load conditions for resonant converters, in this paper. Unlike the conventional SR control method where turn-on time of the MOSFETs is varied depending on load conditions due to the stray inductance induced by a lead frame of MOSFET or PCB patterns, the proposed method automatically maintains a time interval between turn-off instance of a MOSFET and zero current instance of a body diode of the MOSFET as a predetermined time, in each switching cycle. Therefore, optimized turn-on time of the MOSFET can be achieved regardless of the leakage inductance. In this paper, the operational principle of proposed control method has been discussed. It has been tested on LLC resonant converter with 240 W to verify the proposed control method.

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A Study on the FB-ZVS DC/DC Converter for Auxiliary Power Supply in Electric Vehicles (전기자동차 보조전원용 FB-ZVS 직류-직류 변환기에 관한 연구)

  • Lee, Dong-Keun;Yoon, Duck-Yong;Hong, Soon-Chan
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.363-366
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    • 1996
  • A FB-ZVS(Full Bridge Zero Voltage Switching) PWM DC/DC converter for electric vehicles is simulated and implemented in this paper. The converter considered is a step-down DC/DC converter with the ratings of 312/13.5V and 1.35kW. The steady state operation of this converter is divided into six operating modes in case of continuous current mode and eight operating modes in case of discontinuous current mode. Digital simulations using PSpice are carried out to verify the steady-state analysis. A prototype converter was built in the laboratory. MOSFETs were used for swithching devices and fast recovery diodes to reduce the charge storage problem of a pn-junction.

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Performance improvement of stepping motor driver using the CPLD (CPLD를 이용한 2상 스테핑 모터 드라이버의 성능개선)

  • O, Tae-Seok;Kim, Il-Hwan
    • Proceedings of the KIEE Conference
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    • 2003.11c
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    • pp.910-915
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    • 2003
  • This paper describes the design of a 2-phase stepping motor driver using CPLD(Complex Programmable Logic Device). The driver IC such as L297 (SGS-Thomson Microelectronics), which is mostly used has some problems in PWM control because of the switching noise of power MOSFETs. It causes current ripple and acoustic noise. To improve theses characteristics, we proposed a new current control method that the output PWM frequency is almost constant using a digital filter. Also we proposed constant current method for 1-2 phase(half step) excitation. The proposed method is implemented with CPLD(Xilinx, XC9572-PC44). Experimental results show the effectiveness of the proposed method.

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Subthreshold Characteristics of a 50 nm Impact Ionization MOS Transistor (50 nm Impact Ionization MOS 소자의 Subthreshold 특성)

  • Yoon, Jee-Young;Ryu, Jang-Woo;Jung, Min-Chul;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.105-106
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    • 2005
  • The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

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