• Journal of Power Electronics
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• v.16 no.5
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• pp.1843-1850
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• 2016

This study focused on predicting the fatigue life of an insulated gate bipolar transistor (IGBT) power module for electric locomotives. The effects of different wiring technologies, including aluminum wires, copper wires, aluminum ribbons, and copper ribbons, on solder fatigue life were investigated to meet the high power requirement of the IGBT module. The module's temperature distribution and solder fatigue behavior were investigated through coupled electro-thermo-mechanical analysis based on the finite element method. The ribbons attained a chip junction temperature that was 30℃ lower than that attained with conventional round wires. The ribbons also exhibited a lower plastic strain in comparison with the wires. However, the difference in plastic strain and junction temperature among the different ribbon materials was relatively small. The ribbons also exhibited different crack propagation behaviors relative to the wires. For the wires, the cracks initiated at the outmost edge of the solder, whereas for the ribbons, the cracks grew in the solder layer beneath the ribbons. Comparison of fatigue failure areas indicated that ribbon bonding technology could substantially enhance the fatigue life of IGBT modules and be a potential candidate for high power modules.

• Journal of the Korean Society for Railway
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• v.20 no.3
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• pp.339-348
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• 2017

Power supply for railway cars can be divided into propulsion system power supply and auxiliary power units (APU). The propulsion system power supply is for propulsion of railway cars, and regenerative braking; the APU provides power for the air compressor, lighting, car control and other auxiliary parts. According to high voltage and high current specifications, generally, an insulated-gate bipolar transistor (IGBT) is adopted for the switching component. For appropriate switching operation, a gate driver unit (GDU) is essentially required. In this paper, the technical trends of GDU for railway cars are analyzed and a design consideration for IGBT GDU is described.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.128-132
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• 2003

This paper deals with the development of IGBT stacks for cost reduction. One stack is consist of 4 IGBTS in parallel. In the high- and mid-power converters, IGBT stacks are more suitable than single IGBTS in the aspects of total cost of semiconductor devices, time for purchasing, maintenance, radiation of heat, size of surge absorber and harmonic filter, frequency characteristics, and etc.. Problems accompanied by parallel construction are studied and solved. Economical efficiency is discussed and field tests with 100kVA UPS are tarried out to verify the validity of the developed IGBT stacks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.105-108
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• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.713-718
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• 1998

Due to high power ratings and low conduction loss, the IGBT has become more attractive in high power applications. However, its slower characteristics than those of MOSFET cause severe switching losses and switching frequency limitation. This paper proposes the IGBT's soft switching concept with the help of MOSFET, where each of the IGBT and MOSFET plays its role during on-periods and switching instants. Also, the switching losses are analyzed by using the linearized modeling and the modeling and the operations of a converter are investigated to confirm the soft switching of IGBT's.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.4
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• pp.350-355
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• 2004

This paper deals with the design of a heat dissipation system, which consists of a heat source of power semiconductor devices, a heat sink ;md a fan for the forced air cooling. It suggests the method of appropriately dividing the whole heat transfer system into analytical subsystems and also presents the correspondent analytic or experimental design equations for the subsystems. The experimental results on the designed heat dissipation system for the 400kW IGBT inverter show less than 10［%］ error with respect to the design temperature and therefore verify the validity of the proposed analytical design method in the steady state.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.2
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• pp.83-88
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• 1999

Series connection of power semiconductor devices is selected in high voltage and high power applications. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme changes the slope of collector voltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.12
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• pp.4975-4983
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• 2010

In this paper, the ordinariest and strongest simulator that many used to power electronics circuits and many different control technology can apply to more easily understand modeling the element, PSPICE and MATLAB are adapted a micro IGBT, a macro IGBT, PWM generator and to library moeling of validity of the Induction motor is interpreted. Micro IGBT model of demagnetization quality proved for modeling accuracy to through experiment, macromodel IGBT were simulated which the applied to voltage type PWM inverter to the cyclo-converter and induction motor of demagnetization.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1105-1107
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• 2003

일반적으로 정지형 석자시스템은 싸이리스터 제어 정류기를 사용하고 있으나 제주화력에는 IGBT 소자로 구성된 강압형 쵸퍼방식으로 하드웨어 연구가 필요한 실정이다. 발전기 제어시스템이 후비보호가 없는 경우 사소한 고장으로 인한 코아 발전소의 정지로 계통 파급효과가 크게 발생되므로, 이런 현상을 방지위해 디지털 다중화 방식의 설비를 개발하여 신뢰도의 증강 및 안정적인 전력공급이 필요하다. 이를 위해 우선적용 IGBT 소자로 구성된 디지털 여자시스템의 분석을 통해 현장적용에 알맞은 디지털 여자시스템의 신뢰성, 안정성, 기능성을 갖춘 발전기 여자시스템를 개발하고자 한다.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.193-194
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• 2015

In this paper, the solid state pulsed power modulator developed in KERI, which is based on IGBT technologies are overviewed. During last ten years, several kinds of solid state modulators were developed in KERI such as IGBT stacks with step up transformer, full IGBT stack based marx generator, modified IGBT marx generator and high repetitive solid state modulator. Basic principle of the design is described and each pros and cons are compared. KERI's solid state pulsed power modulators has lot of advantages for industrial pulsed power application focused on everlasting life cycle and high repetitive, and shows superior arching protection ability.