• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 추계학술대회 논문집
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• pp.265-265
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• 2015

Zinc Oxide 층은 역구조 유기 태양전지(Inverted Organic Photovoltaics, IOPV)에서 전자 수집 층으로 사용되는데, 전자 수집 및 전기 전도도 증가를 위하여 일반적으로 3차원 나노 구조체 및 양이온이 도핑된 Zinc Oxide 층이 사용된다. 본 연구에서는 저온 3차원 나노 구조체 및 음이온이 도핑된 Zinc Oxide 층을 적용하였으며, 그 결과 전자 수집 향상, 전기 전도도의 증가에 의하여 광전변환 효율(Power Conversion Efficiency, PCE)이 향상됨을 확인할 수 있었다.

• Current Applied Physics
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• 제18권12호
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• pp.1592-1599
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• 2018

The present study deals with the effect of dual cathode buffer layer (CBL) on the performance of bilayer of 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) and fullerene (C70)-based organic solar cell (OSC) with low donor concentration. OSC devices with CBLs have been fabricated using thermal vapor deposition technique. We report the use of lithium fluoride (LiF) and molybdenum trioxide ($MoO_3$) as CBLs. The insertion of LiF between C70 and aluminium (Al) electrode enhances the power conversion efficiency (PCE) of device from 1.89% to 2.47% but quenching of photogenerated excitons is observed at interface of C70 and LiF layers. Incorporation of $MoO_3$ between LiF and Al electrode further enhances PCE of device to 3.51%. This has also improved the material quality and device properties, by preventing the formation of gap states and diminishing exciton quenching.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.293-300
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• 2018

Reduced graphene oxide (rGO) nanosheets were patterned with poly[benzodithiophene-bis(decyltetradecyl-thien) naphthothiadiazole] (PBDT-DTNT) and poly[bis(triiso-propylsilylethynyl) benzodithiophene-bis(decyltetradecyl-thien) naphthobisthiadiazole] (PBDT-TIPS-DTNT-DT) and used in photovoltaics. Conductive patternings changed via surface modification of rGO; because polymers encountered a high hindrance while assembling onto grafted rGO. The best records were detected in indium tin oxide (ITO):poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS):PBDTDTNT/rGO:PBDT-DTNT:LiF:Al devices, i.e., short current density $(J_{sc})=11.18mA/cm^2$, open circuit voltage $(V_{oc})=0.67V$, fill factor (FF) = 62% and power conversion efficiency (PCE) = 4.64%. PCE increased 2.31 folds after incorporation of PBDT-DTNT into thin films. Larger polymer assemblies on bared-rGO nanosheets resulted in greater phase separations.

• Current Photovoltaic Research
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• 제10권4호
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• pp.101-106
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• 2022

We prepared a CsPbI₂Br solution using Cesium iodide (CsI), Lead (II) bromide (PbBr₂) and Lead (II) iodide (PbI₂) materials into a polar solvent mixture of N,N-dimethylformamide (DMF) and Dimethyl sulfoxide (DMSO). A simple spin coating technique was used for the fabrication of CsPbI₂Br absorber layer in the solution process. In order to prepare uniform coating of absorber film we adopted a hot-air process in assocation with the spin coating. It was confirmed that the thin film manufactured by the hot-air process had a higher absorption rate than that without it, and the optical band gap was measured 1.93 eV. The thin film of absorber was uniformly prepared and revealed the Black α-Cubic crystal phase as proved through X-ray diffraction analysis. Finally, a perovskite solar cell having an n-i-p structure was manufactured with a CsPbI₂Br perovskite absorption layer. From the solar cell, we obtained a power conversion efficiency (PCE) of 5.97% in a forward measurement.

• Electronic Materials Letters
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• 제14권6호
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• pp.712-717
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• 2018

In this letter, we have introduced copper chloride ($CuCl_2$) as an additive in the $CH_3NH_3PbI_3$ precursor solution to improve the surface morphology and crystallinity of $CH_3NH_3PbI_3$ films in a single solvent system. Our optimized perovskite solar cells (PSCs) with 2.5 mol% $CuCl_2$ additive showed best power conversion efficiency (PCE) of 15.22%. The PCE of the PSCs fabricated by $CuCl_2$ (2.5 mol%) additive engineering was 56% higher than the PSC fabricated with pristine $CH_3NH_3PbI_3$.

• Korean Journal of Chemical Engineering
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• 제35권12호
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• pp.2496-2503
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• 2018

The short-term stability of high efficiency polymer : nonfullerene solar cells was investigated by employing a quick (ten cycles) current density-voltage (J-V) cycling method. Polymer : nonfullerene solar cells with initial power conversion efficiency (PCE) of >10% were fabricated using bulk heterojunction (BHJ) films of poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo[1,2-b:4,5b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5,7'-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T) and 3,9-bis(2-methylene-((3-(1,1-dicyanomethylene)-6/7-methyl)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b']dithiophene (IT-M). One set of the BHJ (PBDB-T : IT-M) films was thermally annealed at $160^{\circ}C$ for 30min, while another set was used without any thermal treatment after spin-coating. The quick J-V scan (cycling) measurement disclosed that the PCE decay was relatively slower for the annealed BHJ layers than the unannealed (as-cast) BHJ layers. As a result, after ten cycles, the annealed BHJ layers delivered higher PCE than the unannealed BHJ layers due to higher and more stable trend in fill factor. The present quick J-V cycling method is simple but expected to be useful for the prediction of short-term stability in organic solar cells.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.5.1-5.1
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• 2009

Organic photovoltaic (OPV)cells have attracted considerable attention due to their potential for flexible, lightweight, and low-cost application of solar energy conversion. Since a 1% power conversion efficiency (PCE) OPV based on a single donor-acceptor heterojunction was reported by Tang, the PCE has steadily improved around 5%. It is well known that a high parallel (shunt)resistance and a low series resistance are required simultaneously to achieve ideal photovoltaic devices. The device should be free of leakage current through the device to maximize the parallel resistance. The series resistance is attributed to the ohmic loss in the whole device, which includes the bulk resistance and the contact resistance. The bulk resistance originated from the bulk resistance of the organic layer and the electrodes; the contact resistance comes from the interface between the electrodes and the active layer. Furthermore, it has been reported that the bulk resistance of the indium tin oxide (ITO) of the devices dominates the series resistance of OPVs for a large area more than $0.01\;cm^2$. Therefore, in practical application, the large area of ITO may significantly reduce the device performance. In this work, we investigated the effect of sheet resistance ($R_{sh}$) of deposited ITO on the performance of OPVs. It was found that the device performance of polythiophene-fullerene (P3HT:PCBM) bulk heterojunction OPVs was critically dependent on Rsh of the ITO electrode. With decreasing $R_{sh}$ of the ITO from 39 to $8.5\;{\Omega}/{\square}$, the fill factor (FF) of OPVs was dramatically improved from 0.407 to 0.580, resulting in improvement of PCE from $1.63{\pm}0.2$ to $2.5{\pm}0.1%$ underan AM1.5 simulated solar intensity of $100\;mW/cm^2$.

• Bulletin of the Korean Chemical Society
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• 제34권3호
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• pp.856-862
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• 2013

The photoanode electrode of $TiO_2$ nanotubes (NTs) anchored with ZnS/CdSSe/CdS quantum dots (QDs) was prepared by anodization of Ti metal and successive ionic layer adsorption and reaction (SILAR) procedure. The tuning of the band gap of CdSSe was done with controlled composition of Cd, S, or Se during the SILAR. A ladder-like energy structure suitable for carrier transfer was attained with the photoanode electrode. The power conversion efficiency (PCE) of our solar cell fabricated with the regular array of $TiO_2$ NTs anchored with CdSSe/CdS or CdSe/CdS QDs [i.e., (CdSSe/CdS/$TiO_2NTs$) or (CdSe/CdS/$TiO_2NTs$)] was PCE = 3.49% and 2.81% under the illumination at 100 mW/$cm^2$, respectively. To protect the photocorrosion of our solar cell from the electrolyte and to suppress carrier recombination, ZnS was introduced onto CdSSe/CdS. The PCE of our solar cell with the structure of a photoanode electrode, (ZnS/CdSSe/CdS/$TiO_2$ NTs/Ti) was 4.67% under illumination at 100 mW/$cm^2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.313-313
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• 2010

The performance of polymer photovoltaic cells based on blends of poly(3-hexylyhiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) is strongly influenced by blend composition and thickness. Polymer photovoltaic cells based on bulk-heterojunction have been fabricated with a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)-pentacene/poly (3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al. We have prepared PEDOT:PSS by dissolving pentacene in N-methylpyrrolidine (NMP) and mixing with PEDOT:PSS. Pentacene was added a maximum concentration of approximately 5.5mg to the PEDOT:PSS solution and sonicated for 10 min. Active layer (P3HT:PCBM) (1:1) was strongly influenced by PEDOT:PSS-pentacene. We have investigated the performance of photovoltaic device with different concentration of P3HT:PCBM (1:1) 2.0wt%, 2.2wt%, 2.4wt% and 2.6wt%, respectively. The photocurrent and power conversion efficiency (PCE) showed a maximum between 2.0wt% and 2.2wt% concentration of P3HT:PCBM. This implied that both morphology and electron transport properties of the layer influenced the performance of the present photovoltaic cells. As the concentration of P3HT:PCBM blends as an active layer was increased, the power conversion efficiency was decreased. P3HT:PCBM layer and PEDOT:PSS-pentacene layer were characterized by work function, UV-visible absorption, atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscope (SEM).

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.27-32
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• 2011

In this study, we have investigated the power conversion efficiency of organic solar cells utilizing conjugated polymer/fullerene bulk-hetero junction(BHJ) device structures. We have fabricated poly(3-hexylthiophene)(P3HT), poly[2methoxy-5-(3',7'-dimethyloctyl-oxy)-1-4-phenylenevinylene] as an electron donor, [6,6]-phenyl $C_{61}$ butyric acid methylester(PCBM-$C_{61}$)as an electron acceptor, and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS) used as a hole injection layer(HIL), after fabricated active layer, between active layer and metal cathode(Al) deposited LiF interlayer(5 nm). The properties of fabricated organic solar cell(OSC) devices have been analyzed as a function of different thickness. The electrical characteristics of the fabricated devices were investigated by means J-V, fill factor(FF) and power conversion efficiency(PCE). We observed the highest PCEs of 0.628%(MDMO-PPV:PCBM-$C_{61}$) and 2.3%(P3HT:PCBM-$C_{61}$) with LiF inter-layer at the highest thick active layer, which is 1.3times better than the device without LiF inter-layer.