• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.380-388
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• 2011

In this paper, we developed the X-band 63 watt pulsed SSPA(Solid State Power Amplifier) by using HMIC(Hybrid Microwave Integrated Circuits). The pulsed SSPA consists of power supply and 3-stage amplifier modules : pre-amplifier stage, driver-amplifier stage, final-amplifier stage. The developed pulsed SSPA provides more than 63 watts of output power with a short pulse width and the duty cycle of up to 1.2 % at $70^{\circ}C$. The fabricated module offers great than 37 dB of saturated gain across the operating band. Input and output VSWR is <1.5:1. This module has an average current of 400 mA typical and operates at a +28 $V_{dc}$ supply. The developed SSPA in this paper can apply to pulsed Doppler radar with high speed operation.

• Journal of information and communication convergence engineering
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• v.1 no.4
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• pp.228-232
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• 2003

The previous design work for very large final amplifier pumped by electron beam module was described from the point of view of energy characteristics. In this work, the design problems for phase front distortion, ASE, and gain control in large aperture amplifier are presented in detail.

• Journal of information and communication convergence engineering
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• v.1 no.1
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• pp.39-43
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• 2003

The technology required to advance the state of the art of ultra-high-intensity excimer amplifier construction to the 100 J/100fs output pulse level is identified. The preliminary design work for very large final amplifier pumped by electron beam module is described, and key design problems and approaches are presented and discussed in detail based on the recent experimental and theoretical results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1069-1077
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• 2011

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1079-1086
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• 2012

In this paper, X-band 60 W Solid-State Power Amplifier with sequential control circuit and pulse width variation circuit for improve bias of SSPA module was designed. The sequential control circuit operate in regular sequence drain bias switching of GaAs FET. The distortion and efficiency of output signals due to SSPA nonlinear degradation is increased by making operate in regular sequence the drain bias wider than that of RF input signals pulse width if only input signal using pulsed width variation. The GaAs FETs are used for the 60 W SSPA module which is consists of 3-stage modules, pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main power amplifier stage is implemented with the power combiner, as a balanced amplifier structure, to obtain the power greater than 60 W. The designed SSPA modules has 50 dB gain, pulse period 1 msec, pulse width 100 us, 10 % duty cycle and 60 watts output power in the frequency range of 9.2~9.6 GHz and it can be applied to solid-state pulse compression radar using pulse SSPA.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.1
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• pp.50-54
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• 2011

In this article, the linearity of single power amplifier is improved by suppress $2^{nd}$ and $3^{rd}$ harmonics at output port of high power amplifier and by cancelling of $3^{rd}$ IMD. The matching network in order to suppress harmonics consists of metamaterial like the CRLH. The $2^{nd}$ and $3^{rd}$ harmonics are suppressed over 27 dBc, respectively. A phase of generated $3^{rd}$ IMD at output of DPA (drive power amplifier) has changed in order to offset the $3^{rd}$ IMD of HPA (high power amplifier). The harmonics of the proposed PAM suppress over 6 dB than single HPA. The PAM has a 36.98 dBm of the output power, 21.6 dB of the power gain and 29.4 % of the PAE. The harmonics is a -53 dBc about PAM. This result indicate that a harmonic level is lower 20 dB than reference power amplifier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.606-612
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• 2012

A highly efficient multi-mode balanced power amplifier(PA) structure is proposed for W-CDMA handset applications. The proposed PA has 2-stage amplifier configuration and the stage-bypass and load impedance switching techniques were applied to enhance power efficiency at medium power level as well as low output power level. Using the two techniques, four highly efficient power modes were realized. To demonstrate the usefulness of the proposed structure, a GaAs HBT balanced PA module was designed, fabricated, and measured.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.262-265
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• 2012

In this paper, a Ka-band 8 W power amplifier module with WR-28 waveguide input and output ports is implemented and measured using four 2 W power amplifier modules and 4:1 waveguide power combiners with high isolation of 25 dB at 35 GHz. The 2 W power amplifier modules are fabricated using waveguide-to-microstrip transitions and show output power of 32.5~33.3 dBm and power gain of 26.9~28.7 dB at 35 GHz. Four 2 W power amplifier modules are combined through 4:1 waveguide power combiners with resistive septum and the combined power shows 39.0 dBm(8 W) under 6 V drain bias and 39.6 dBm(9.1 W) under 6.5 V drain bias at 35 GHz.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.4
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• pp.61-69
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• 2003

Cellular network을 이용하는 휴대 단말기의 경우 TDMA(GSM, IS-136), CDMA(IS-95) 그리고 WCD-MA 등을 포함해서 년간 약 4억대 정도 생산되고 있고, PAM(Power Amplifier Module)은 단말기 한 대당 1~2개 정도 사용되며, 단말기의 battery 사용시간과 밀접한 관련이 있다. 또한 antenna front-end에 장착되기 때문에, 신호의 왜곡에 의한 인접채널 누설 전력과 harmonic 등 전기적인 규격의 적합성과 ESD, 습기 등 품질 신뢰성 문제에 직접적인 영향을 주는 중요한 부품 중의 하나이다. 이로 인하여 PAM의 핵심 기능을 담당하는 PA IC의 공정 기술과 설계 기술, PAM제조 기술 등의 향상에 대한 많은 연구와 개발이 이루어졌다. 본 고에서는 PAM의 최근 기술 동향과 기능적으로 PAM이 주변 수동 및 능동 부품과 집적화 되고 있는 복합 모듈의 동향에 대해서 기술한다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.5
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• pp.63-70
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• 2020

In this paper, the transmit-receive module for military seekers has been designed and fabricated in 35 GHz. To increase the performance of substrates and high integration of circuits in millimeter-wave band, a 4-layer LCP(Liquid Crystal Polymer) substrate was developed. This substrate was implemented with three FCCL substrates and two adhesive layers, and a process using the difference in melting point between the substrates was used for lamination. Using a strip line and a microstrip line was confirmed by the transmission loss along the length of the substrate, and the performance of LCP substrates was validated with a power divider in 35 GHz. After confirming the performance of individual blocks such as power amplifier and low noise amplifier, a single channel Ka-band transmission/reception module was developed using a 4-layer liquid crystal polymer substrate. The transmit power of this module has above 1.1W in pulse duty 10% and has an output power of 1.1W and it has receive noise figure less than 8.5 dB and receive gain more than 17.6 dB.