• Bulletin of the Korean Chemical Society
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• 제30권2호
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• pp.467-470
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• 2009

• 한국정보통신학회논문지
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• 제19권6호
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• pp.1399-1404
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• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널길이와 채널두께의 비에 따른 드레인 유도 장벽 감소 현상의 변화에 대하여 분석하고자한다. 드레인 전압이 소스 측 전위장벽에 영향을 미칠 정도로 단채널을 갖는 MOSFET에서 발생하는 중요한 이차효과인 드레인 유도 장벽 감소는 문턱전압의 이동 등 트랜지스터 특성에 심각한 영향을 미친다. 드레인 유도 장벽 감소현상을 분석하기 위하여 포아송방정식으로부터 급수형태의 전위분포를 유도하였으며 차단전류가 10^-7 A/m일 경우 비대칭 이중게이트 MOSFET의 상단게이트 전압을 문턱전압으로 정의하였다. 비대칭 이중게이트 MOSFET는 단채널 효과를 감소시키면서 채널길이 및 채널두께를 초소형화할 수 있는 장점이 있으므로 본 연구에서는 채널길이와 두께 비에 따라 드레인 유도 장벽 감소를 관찰하였다. 결과적으로 드레인 유도 장벽 감소현상은 단채널에서 크게 나타났으며 하단게이트 전압, 상하단 게이트 산화막 두께 그리고 채널도핑 농도 등에 따라 큰 영향을 받고 있다는 것을 알 수 있었다.

• Ocean and Polar Research
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• 제28권3호
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• pp.339-352
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• 2006

Seasonal and tidal variations of density stratification in the Saemangeum waters are investigated based on synoptic CTD observations between July 2003 and September 2005. CTD data used in this study are those obtained after closing the dike No. 4 and before closing the two final gaps, the Sinsi and the Garyeok, on the Saemangeum tidal harrier. A total of 19 field campaigns comprehend a wide temporal spectrum, that is, few seasons, spring and neap tides, and high and low waters. In addition, ADCPs were anchored and CTDs were cast at three stations for 25 h in July 2005. Water columns are vertically homogeneous in autumn and winter. The vertical homogeneity persists in spring but with an occasional weak stratification in i:he northern part of the Gogunsan Islands. Increased reshwater runoff tends to stabilize the water columns and strong density stratification is established in summer. The mean potential energy anomaly (PEA) in summer used as a stratification parameter is the largest $(27.7\;J\;m^{-3})$ in the northern part of the Gogunsan Islands where the Geum River discharge dominates, the smallest $(16.9\;J\;m^{-3})$ is in the inner area of the barrier, in between the two $(21.6\;J\;m^{-3})$ in the southern part of the Gogunsan Islands. Whereas the stratification is generally strengthened in summer, strong winds or large tidal currents over the shallow depths frequently destratify the water column near the mouth of river runoff inside the tidal barrier. Periodic stratification, the development of stratification on the ebb and its breakdown on the flood, occurs in the mid-area inside the barrier induced by the tidal straining, which can also be found in the results of 25 h observation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권4호
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• pp.287-298
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• 2007

A two-dimensional treatment of the potential distribution under the depletion approximation is presented for poly-crystalline silicon thin film transistors. Green's function approach is adopted to solve the two-dimensional Poisson's equation. The solution for the potential distribution is derived using Neumann's boundary condition at the silicon-silicon di-oxide interface. The developed model gives insight into device behavior due to the effects of traps and grain-boundaries. Also short-channel effects and drain induced barrier lowering effects are incorporated in the model. The potential distribution and electric field variation with various device parameters is shown. An analysis of threshold voltage is also presented. The results obtained show good agreement with simulated results and numerical modeling based on the finite difference method, thus demonstrating the validity of our model.

• Bulletin of the Korean Chemical Society
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• 제25권11호
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• pp.1645-1647
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• 2004

Potential energy surfaces for the reaction Al + $O_2{\to}$AlO + O have been calculated with the multireference configuration interaction (MRCI) method using molecular orbitals derived from the complete active space selfconsistent field (CASSCF) calculations. The end-on geometry is the most favourable for the reaction to take place. The small reaction barrier in the present calculation (0.11 eV) is probably an artefact related to the ionicneutral avoided crossing. The charge analysis implies that the title oxidation reaction occurs through a harpooning mechanism. Along the potential energy surface of the reaction, there are two stable intermediates of $AlO_2(C_{{\infty}v}$ and $C_{2v}$) at least 2.74 eV below the energy of reactants. The calculated enthalpy of the reaction (-0.07 eV) is in excellent agreement with the experimental value (-0.155 eV) in part due to the fortuitous cancellation of errors in AlO and $O_2$ calculations.

• 한국주거학회논문집
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• 제22권4호
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• pp.43-50
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• 2011

In an aging society, as the number of people with disabilities increases concerns are raised about the quality of life of these people and their access to a safe environment becomes important. The purpose of this study is to find out the value of accessibility as an attribute of housing. To estimate the value of accessible, barrier-free housing, this study uses the Contingent Valuation Method (CVM) and analyzes the factors which affect the Willingness To Pay (WTP) of survey respondents by using Survival Analysis. In addition, the importance and satisfaction of barrier-free facilities in the dwellings of survey respondents was investigated. Since aging could be an important factor in influencing the need for accessibility, this study surveyed two age groups, one group (212 respondents) of people below the age of 65 and the other (162 respondents) of people above 65. The results of this study show that respondents would pay on average 2.67% more for being barrier-free when answering an open-ended question and 3.87% more for barrier-free housing when using the double referendum model. This is the increase in value that the respondents perceive as a consequence of removing all the architectural barriers from a dwelling. On average, elderly respondents would pay 2.99% of housing price for accessible features compared to 4.40% of the younger group. However, if the elderly who have willingness to pay for accessibility, the value the older group put on barrier-free housing was higher than the value perceived by the younger group. Factors that influence the WTP are importance of barrier-free facilities, education level and housing type. The value of dwellings without barriers estimated in this study shows the potential size and value of this kind of housing market to the housing development sector.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• 대한기계학회논문집B
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• 제27권11호
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• pp.1542-1547
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• 2003

Although dielectric barrier discharge (DBD) in air has been applied to a wider range of aftertreatment processes for HAPs (Hazardous Air Pollutants), due to its high electron density and energy, its potential use as precharging dust particles is not well known. In this work, we measured size distributions of bimodal aerosol particles and estimated collection efficiency of the particles by an electrostatic precipitator (ESP) using DBD as particle charger. To examine the particle collection with DBD charger, nano size particles of NaCl(20∼100nm) and DOS (50∼500nm) were generated by a tube furnace and an atomizer, respectively. For experimental conditions of 60㎐, 11㎸ and 60 lpm, the particle collection efficiency for the hybrid system was over 85%, based on the number of particles captured.

• 한국대기환경학회지
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• 제18권3호
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• pp.173-182
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• 2002

We investigated the effects of operating variables, such as electrical. reactor and gas parameters on toluene removal and discharge property in the dielectric barrier discharge (DBD) process. The toluene removal was initiated with the energy transfer to the reactor by loading of voltages higher than the discharge onset value. The energy transfer and toluene removal increased with the applied voltage. Higher removal rate was observed with smooth surface electrode despite of lower energy transfer compared with the coarse electrode, because more uniform discharge can be obtained on smooth surface state. The decrease of dielectric material thickness enhanced the removal efficiency by increasing the discharge potential. The toluene removal efficiency decreased with the increase of the inlet concentration. The increase of gas retention time enhanced the removal efficiency by the increase of energy density. The oxygen and humidity contents seem to exert significant influences on the toluene removal by dominating the generation of electrons, ions, and radicals which are key factors in the removal mechanism.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.348-348
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• 2010

Nanostructures have great potential in various devices due to the their promising electronic and optical properties. Nano-patterned the front surface of a solar cell generally results in improved performance, mostly due to an increase in the short-circuit current by the incident photons strike the cell surface at an angle. In this work, we investigate AFM-assisted nano-patterned field effect transistors (FETs) with vairous silicon oxide distance value D, from ${\sim}0.5{\mu}m$ to $1{\mu}m$. Also, we compared the electro-optical characteristics of the patterned FETs and the non-patterned FETs (reference device) based on both 2-dimensional simulation and experimental results for the wavelength from 100nm to 900nm. In addition, we report electric characteristics for illuminated surface in schottky barrier field effect transistors (SB-FETs).