• 천문학회보
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• 제42권2호
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• pp.67.3-68
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• 2017

Bright rays are often observed after coronal mass ejections (CMEs) erupt. These rays are dynamical structures along which plasmas move outward. We investigated the outflows along the post-CME rays observed by the COR2 on board STEREO Behind on 2013 September 21 and 22. We tracked two CMEs, two ray tips, and seven blobs using the NAVE optical flow technique. As a result, we found that the departure times of blobs and ray tips from the optimally chosen starting height of 0.5 $R{\odot}$ coincided with the occurrence times of the corresponding recurrent small flares within 10 minutes. These small flares took place many hours after the major flares. This result supports a magnetic reconnection origin of the outward flows along the post-CME ray and the importance of magnetic islands for understanding the process of magnetic reconnection. The total energy of magnetic reconnection maintaining the outflows for 40 hr is estimated at 1.4' 1030 erg. Further investigations of plasma outflows along post-CME rays will shed much light on the physical properties of magnetic reconnection occurring in the solar corona.

• Asian-Australasian Journal of Animal Sciences
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• 제19권1호
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• pp.19-25
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• 2006

The effect of vitamin E supplementation on plasma ${\alpha}$-tocopherol level, total antioxidant level and reproductive performance in Murrah buffaloes was studied during periparturient period. Twenty-four advance pregnant buffaloes were randomly divided into four equal groups as $T_1$, $T_2$, $T_3$ and $T_4$ and were supplemented with 0, 1,000, 1,500 and 2,000 IU of ${\alpha}$-tocopheryl acetate (Merck) from 60 days prepartum to 30 days postpartum and 0, 500, 750 and 1,000 IU from 30 to 60 days postpartum, respectively. Blood samples were collected at -60, -45, -30, -15, -7, 0, 7, 15, 30 and 60 days of parturition and were analyzed for plasma ${\alpha}$-tocopherol and total antioxidant activity (TAA). The intake of DM, CP and TDN did not vary among different groups. Plasma ${\alpha}$-tocopherol and TAA around parturition (-7 to 15 day) in $T_3$ and $T_4$ were significantly higher than the control group. There was 17% reduction in retention of fetal membranes (RFM) and metritis in $T_4$ than control. The post partum estrus interval averaged 58.00, 55.33, 51.83 and 43.00 days in $T_1$, $T_2$, $T_3$ and $T_4$ respectively. There was significant reduction in days open in both $T_3$ and $T_4$ in comparison to $T_1$ group (127,130 Vs.146). All the vitamin E supplemented groups showed reduction in days open than their previous lactation performance. Supplementation of vitamin E at $1,500IU\;d^{-1}$ from 60 day prepartum to 30 day post partum to buffaloes exhibited beneficial effect on plasma ${\alpha}$-tocopherol level and TAA around parturition and continuation of its supplementation at $1,000IU\;d^{-1}$ from 30 to 60 days of lactation improved post partum reproductive performance of buffaloes.

• IMMUNE NETWORK
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• 제20권5호
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• pp.42.1-42.10
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• 2020

Long-lasting post-switched plasma cells (PCs) arise mainly from germinal center (GC) reactions, but little is known about the mechanism by which GC B cells differentiate into PCs. Based on our observation that the expression of the transcription factor CCAAT/enhancer binding protein β (C/EPBβ) is associated with the emergence of post-switched PCs, we enquired whether a cell-autonomous function of C/EPBβ is involved in the program for PC development. To address this, we generated C/EPBβ-deficient mice in which the Cebpb locus was specifically deleted in B cells after transcription of the Ig γ1 constant gene segment (Cγ1). In response to in vitro stimulation, B cells from these Cebpb^fl/flCγ1^Cre/+ mice had defects in the induction of B lymphocyte-induced maturation protein 1 (Blimp1) and the formation of IgG1⁺ PCs, but not in proliferation and survival. At steady state, the Cebpb^fl/flCγ1^Cre/+ mice had reduced serum IgG1 titers but normal IgG2c and IgM titers. Moreover, upon immunization with T-dependent Ag, the mice produced reduced levels of Ag-specific IgG1 Ab, and were defective in the production of Ag-specific IgG1 Ab-secreting cells. These results suggest that a cell-autonomous function of C/EPBβ is crucial for differentiation of post-switched GC B cells into PCs through a Blimp1-dependent pathway.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.384.2-384.2
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• 2014

We investigated the electrical and structural properties of chemical vapor deposition (CVD)-grown graphene and post treated by O2 plasma. For the patterning of graphene, the plasma technology is generally used and essential for etching of graphene. But, the cautious O2 plasma treatments are required to avoid the damage in graphene edge which can be the harmful effects on the device performance. To analyze the effects of plasma treatment on structural properties of graphene, the change of surface morphology of graphene are measured by scanning electron microscope and atomic force microscope before and after plasma treatment. In addition, the binding energy of carbon and oxygen are measured through to X-ray photoelectron spectroscopy. After plasma treatment, the severe changes of surface morphology and binding energy of carbon and oxygen were observed which effects on the change of sheet resistance. Finally, to analyze of graphene characteristics, we measured the Raman spectroscopy. The measured results showed that the plasma treatment makes the upward of D-peak and downward of G'-peak by elevated power of plasma.

• 한국진공학회지
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• 제7권3호
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• pp.167-272
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• 1998

ECR plasma CVD를 이용한 SiOF박막은 낮은 유전상수를 가지고 있으며, 기존의 공정과의 정합성이 우수해 다층배선 공정에 채용이 유망한 재료이지만 수분의 흡수로 인한 유전율의 상승과 후속공정의 안정성이 문제점으로 부각되고 있다. 따라서 본 연구에서는 SiOF박막의 내흡습성과 후속공정에서의 안정성을 향상시키기 위하여 SiOF박막을 증착한 후 후속 산소 플라즈마 처리를 행하였다. SiOF박막은 산소 플라즈마 처리를 수행함으로써 SiOF박막의 밀도가 증가하고, 수분과의 친화력이 강한 Si-F 결합이 감소하는 것이 주요한 원인으로 사료된다. 하지만 플라즈마 처리 시간이 5분 이상으로 증가하면 유전율의 증가가 일어난다. 따라서 본 실험에서는 산소 플라즈마 처리조건이 마이크로파 전력이 700W, 공정 압력이 3mTorr, 기판온도가 $300^{\circ}C$일 경우 플라즈마 처리시간은 3분이 적당한 것으로 생각 된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국재료학회지
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• 제14권4호
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• pp.265-269
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• 2004

Plasma nitrocarburising and post oxidation were performed on SCM435 steel by a pulsed plasma ion nitriding system. Plasma oxidation resulted in the formation of a very thin ferritic oxide layer 1-2 $\mu\textrm{m}$ thick on top of a 15～25 $\mu\textrm{m}$ $\varepsilon$-F $e_{2-3}$(N,C) nitrocarburized compound layer. The growth rate of oxide layer increased with the treatment temperature and time. However, the oxide layer was easily spalled from the compound layer either for both oxidation temperatures above $450^{\circ}C$, or for oxidation time more than 2 hrs at oxidation temperature $400^{\circ}C$. It was confirmed that the relative amount of $Fe_2$$O_3$, compared with $e_3$$O_4$, increased rapidly with the oxidation temperature. The amounts of ${\gamma}$'-$Fe_4$(N,C) and $\theta$-$Fe_3$C, generated from dissociation from $\varepsilon$-$Fe_{2-3}$ /(N,C) phase during $O_2$ plasma sputtering, were also increased with the oxidation temperature.e.

• 한국진공학회지
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• 제19권4호
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• pp.275-280
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• 2010

MOCVD (Metal-Organic Chemical Vapor Deposition) 장비를 사용하여 BZO (boron doped zinc oxide, ZnO:B) 박막을 증착하고 수소 플라즈마 처리공정을 진행하였다. 본 연구는 수소 플라즈마 처리된 BZO 박막에 산소 플라즈마 재처리를 진행하여 BZO 박막의 특성 변화를 분석하였다. 그 결과 BZO 박막 성장은 (100), (101), (110)을 확인하였고, 산소 플라즈마 재처리에 의하여 일함수와 표면 저항이 증가하였다. 수소 플라즈마 처리만을 진행한 BZO 박막과 산소 플라즈마 재처리 공정을 진행한 BZO 박막의 300~1,100 nm에서 가중치 투과율은 86%로 변화하지 않았으며, 가중치 산란도는 12%에서 15%로 증가하였다.

• 한국재료학회지
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• 제8권4호
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• pp.317-322
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• 1998

플라즈마 화학기상증착법에 의해 증착된 저유전율 SiOF박막의 물성 안정화를 위하여 증착후 $N_2O$플라즈마로 열처리함으로써 그 특성을 평가하였다. SiOF박막은 대기방치 및 열처리에 불안정한 성질을 가진다. SiOF 박막은 박막내의 F-Si-F 결합의 존재 때문에 흡습현상이 발생하며, 박막내의 F함량이 증가함에 따라 수분 흡수가 증가한다. 또한 열처리를 거치면서 F이 탈착되어 박막내의 F함량이 감소한다. $N_2O$플라즈마 열처리는 표면에 얇은 SiON층을 형성시킴으로써 박막을 안정화시키는데 효과적이었다. 그러나 장시간의 N/sun 2/O플라즈마 열처리는 유전율을 크게 증가시킨다. 따라서 $N_2O$플라즈마 열처리에 의한 유전율의 증가없이 물성을 안정화 시키기 위해서는, 대기방치나 열처리에 의한 안정화 효과를 유지하면서 $N_2O$플라즈마 열처리에 의한 유전율의 증가를 최소화시킬 수 있는 공정의 확립이 필요하다.

• 대한가정학회지
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• 제32권3호
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• pp.207-216
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• 1994

Backsulgies containing various levels of guar gum(0g, 2.5g or 5g) were ingested by ten healthy male subjects after 12-h fast. Guar backsulgies was given a time in a week a time in a week for 3 weeks with 75g glucose. The Sensory qualities of backsulgies containing guar gum powder of different levels(0g, 2.5, 5g) were also evaluated using a hedonic scoring technique. On each test day 4ml samples of venous blood were taken from the fasted subjects. Further 4ml post-prandial blood samples were taken from the subjects 30, 60, 90 and 120min after guar backsulgies had commenced. Result were as follows: Plasma glucose and insulin levels were not sifnificantly reduced according to guar gum levels in backsulgies. But plasma glucose and insulin levels of the case which ingested 5g guar backsulgies tended to be lower than those of the case which ingested 0g or 2.5g guar backsulgies. Therefore it is recommended that 5g guar backsulgies is most effective snack of diabetics. KEY WORDS: guar backsulgies plasma glucose, plasma insulin, snack.